ForosTutorialesNoticiasNoticias IndustriaCiencia y tecnologiaTelefoniaElectronica Facil
ForosTutorialesNoticiasIndustriaCienciaTelefonía
Secciones
Foros Electrónica
Publicidad
Sitios recomendados
Lighting Applications to Benefit from High-Efficiency Power MOSFET from STMicroelectronics
 
 Enviar un articulo a Meneame Enviar un articulo a Fresqui Enviar un articulo a Docencia Enviar un articulo a Enchilame Enviar un articulo a Historiador Enviar un articulo a Neodiario 
Enviar esta noticia a un amigo imprimir paginaincrementar tamaño textoreducir tamaño textoRestaurar tamaño original


Geneva, - STMicroelectronics, one of the world’s leading power semiconductor manufacturers, today introduced the first member of a new power MOSFET family. The new family allows customers to drastically reduce conduction losses and increase efficiency and reliability of their lighting applications by achieving very low ON-resistance and excellent dynamic and avalanche characteristics.

Continuous requests from the market for higher power density and lower cost in commercial lighting applications has pushed semiconductor manufacturers to drive device optimization to the limit. The new STD11NM60N, benefiting from the second generation of ST’s proprietary MDmeshTM technology, provides such optimization with a maximum RDS (ON) of 450 mOhm. The device’s resistance value is reduced by up to 55% compared to the previous MDmesh technology, without sacrificing tight control of its temperature dependence.

In addition to substantially reducing ON-state losses by minimizing the resistance value, the 600V device features an energy-optimized driver circuit which enables the MOSFET to drive higher currents at a lower VGS(th) (Voltage Gate Threshold). In fact, keeping the same threshold spread (2V), the range of VGS used to drive the device has been lowered, thus optimizing the drive and ensuring high noise immunity that prevents the circuit from switching on unintentionally.

The STD11NM60N features an excellent diode dv/dt capability as well as good avalanche performance allowing customers to keep operating temperatures within the typical working range. As a result of the very low conduction losses and reduced power dissipation, the device also helps customers cut heat-sink dimensions saving significant space board.

The small size of the chip, housed in very tiny DPAK/IPAK and TO-220FP packages, make it particularly suited to lighting applications such as High Power Factor electronic ballasts and High Intensity Discharge (HID) lamp electronic ballasts.

The STD11NM60N is available in volume now. Pricing is $0.90 in quantities of 10,000 pieces.


Sábado, 09 Diciembre, 2006 - 11:01
Noticias relacionadas

La noticia más leída en relación al tema Sipex Corporation:
Sipex Announces Chinese Strategic Alliance


Lighting Applications to Benefit from High-Efficiency Power MOSFET from STMicroelectronics | Entrar/Crear una cuenta | 0 Comentarios
Los comentarios son propiedad de sus respectivos autores.
No somos responsables de su contenido.
No se permitirán los comentarios que :
- puedan resultar ofensivos o injuriosos
- incluyan insultos, alusiones sexuales innecesarias y palabras soeces o vulgares
- apoyen la pedofilia, el terrorismo o la xenofobia
Usuario
Boletines de correo
Boletines
Alguien dijo ...
Las matemáticas son el alfabeto con el cual Dios ha escrito el Universo,

Galileo Galilei (1564-1642).
Físico y astrónomo italiano.
Electrónica Fácil en tu móvil
AvantGo
Contacto
Sindicacion RSSSindicacion RSS forosNoticias en tu correo© 2004 F.J.M.Información Legal