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Cree to Demonstrate New GaN WiMAX Transistors at IEEE MTT-S 2006

DURHAM, NC, — Cree, Inc. (NASDAQ: CREE) announced today that it will demonstrate three new Gallium Nitride (GaN) high electron mobility transistors (HEMT) targeted for WiMAX applications ranging from 2.4 to 3.9 GHz next week. The new power transistors are debuting at Booth 1143 at the IEEE MTT-S International Microwave Symposium 2006 in San Francisco, June 13-15.

Cree’s new 30- and 120-watt transistors (CGH35030 and CGH35120) augment the 15-watt CGH35015 released for sample shipments last month. Together, these devices cover multiple WiMAX applications requiring from 2 to 12 watts average orthogonal frequency division multiplexing (OFDM) output power in the 3.3 to 3.9 GHz frequency band. Cree will also demonstrate the new 15-watt CGH27015, the first in a new line of Cree transistors targeted to address the 2.4 to 2.9 GHz North American WiMAX market.

“We are pleased to be showcasing our new WiMAX transistors at this year’s MTT show. When fully released later this year, the CGH35030, CGH35120, and CGH27015 will add to our growing line of standard wide bandgap (WBG) WiMAX products and are expected to provide great versatility to WiMAX base transceiver station (BTS) and consumer premise equipment (CPE) designers,” said Jim Milligan, Cree’s product manager for wide bandgap radio frequency products.

In addition, Cree’s manager of RF product development, Simon Wood, will present a paper entitled “High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications” at the MTT-S International Microwave Symposium Workshop on “Advances in GaN HEMT Device Technology, Modeling and Applications” June 11.

Miércoles, 21 Junio, 2006 - 11:49
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