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|La ciencia es como la tierra; solo se puede poseer un poco de ella.|
François Marie Arouet(Voltaire - 1694-1778).
Escritor y filósofo francés.
|ON Semiconductor Expands Standard Component Portfolio with 11 New Low Vce(sat) BJTs in SOT-23, SOT-563, WDFN and ChipFET Packaging|
PHOENIX, Ariz. -- ON Semiconductor, a leading global supplier of efficient power management solutions, today announced the expansion of its industry leading low Vce(sat) bipolar junction transistors (BJTs) portfolio to include WDFN6, WDFN3, SOT-23, SOT-563 and ChipFET packages. These new devices offered in multiple package options incorporate advanced silicon technology and provide better power efficiency and longer battery life than traditional BJTs or planar MOSFETS. The devices are ideal for a variety of portable applications.
“ON Semiconductor continues to expand its portable products portfolio to provide design flexibility and enable optimal power conservation,” said Mamoon Rashid, general manager of ON Semiconductor’s Discrete Products Division. “Our best-in-class BJT portfolio delivers the industry’s lowest power loss and best thermal performance. We have now expanded this portfolio to more than 20 products to offer designers the widest selection of high performance BJTs on the market today.”
The new low Vce(sat) surface mount devices are specifically designed for use in low voltage, high-speed switching applications where energy efficiency control is vital. They feature ultra-low saturation voltage - 45 millivolts (mV) at 1 amp - and high current gain. Offering a high electrostatic discharge (ESD) tolerance of >8,000 volts (V), they are self-protecting against unexpected surges and damage. By providing superior electrical performance and low temperature coefficient, they improve power efficiency and ultimately, battery power conservation.
The SOT-23 is one of the industry's most popular packages and offers the lowest cost. The SOT-563 is the smallest of the new package offerings at 1.6 mm x 1.6 mm x 1.0 mm. The two WDFN packages are 2.0 mm x 2.0 mm with a low 0.7 mm package height. This package is the most thermally efficient on the market today for portable applications. The ChipFET at 3.0 mm x 2.0 mm x 1.0 mm provides the best overall performance.
Ideal applications for these devices include power management, battery charging, low drop out regulation, vibrator motors, LED backlighting, disk drive control, camera flash and low power buck / boost converters.
Domingo, 29 Octubre, 2006 - 07:35