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|Fujitsu Introduces New Low Power 256Mbit FCRAM™ for Mobile Applications|
Sunnyvale, CA, — Fujitsu Microelectronics America, Inc. today announced a new 256Mbit Mobile Fast Cycle RAM (FCRAM), a pseudo static RAM (pSRAM) with an SRAM interface based on Fujitsu’s unique FCRAM core technology. The high-speed operation and low power consumption of the new MB82DDS08314A FCRAM make it an ideal design choice for mobile applications such as cellular phones.
The new FCRAM uses double data rate (DDR) burst mode operation and is fully compliant with the common specifications for Mobile RAM (COSMORAM) Revision 4. Along with the DDR synchronous burst mode, the new FCRAM features a multiplexed address/data interface, high-speed data transfer reaching 1GByte/s, and rapid initial access time, which is enabled by a very short latency mode.
The MB82DDS08314A also minimizes device pin counts by multiplexing address and data buses. Smaller pin counts eliminate the need for complicated board designs.
“High-end mobile phones require feature-rich functions such as digital still cameras, video cameras, and digital terrestrial broadcasting streaming. With the growing popularity of high performance smart phones, high-density, high-speed FCRAMs are essential. The Fujitsu FCRAM family provides very high-speed data rates to enhance the mobile phone feature on the existing PSRAM-based platform,” said Tong Swan Pang, product marketing manager of Fujitsu Microelectronics America.
The Fujitsu 256Mbit FCRAM offers various power-down modes from full sleep mode to partial shutdown to efficiently manage power conservation depending on the needs of the user. This prolongs battery life for mobile phones.
Fujitsu has pioneered the pseudo SRAM for mobile phones and is a major contributor to the establishment and expansion of the market. The company has a strong history of delivering solutions, to meet the needs of high-speed memory applications.
Fujitsu introduced the burst mode Mobile FCRAM family, 32Mbit and 64Mbit devices, in May 2003, and followed with a 128Mbit device in August 2003.
Fujitsu’s MB82DBS08314A Ready for Users Requiring Large RAM
In addition to the new DDR burst Mobile FCRAM 256Mbit single data rate (SDR) Mobile FCRAM, Fujitsu also is introducing the MB82DBS08314A, which is compliant with the conventional COSMORAM Rev.3. This FCRAM provides an ideal solution for customers who require large RAM density with an existing SDR PSRAM interface.
Engineering samples will be available in January 2007, and volume production will begin in April 2007. Both devices are available in packages, as well as in chip and wafer form.
Viernes, 08 Diciembre, 2006 - 08:48