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AMI Semiconductor Announces New XtreMOS™ Technology

Pocatello, Idaho – AMI Semiconductor , a designer and manufacturer of state-of-the-art integrated mixed-signal and structured digital products for the automotive, medical and industrial markets announced the first results on its new XtreMOS technology at this year’s annual IEDM 2006.

The XtreMOS is a novel smart-power device technology that is breaking the silicon limit and is outperforming competition by a factor 2-3 for voltages in the range of 100V and achieving an on-state resistance Ron as low as 33 mohm.mm2. The device consists of vertically stacking a MOS and a high-voltage Resistor, making use of trench-based vertical RESURF physics to achieve a record Ron with a high breakdown voltage and high Safe Operating Area (SOA). This innovative technology is built for power-efficient high-voltage applications such as line drivers and motor controllers.

"XtreMOS is a breakthrough innovation in smart power technology, enabling the integration of very efficient high power drivers into truly SoC smart power products, at a low cost,” said Jon Stoner, AMIS CTO. Initially this technology will be implemented in AMI Semiconductor's 0.35um I3T Smart Power Technology Platform, though it can easily be ported to other technology nodes. The XtreMOS technology will allow AMIS to further grow into markets for integrated power applications, such as motor drivers and communications line drivers.

The XtreMOS technology is developed within the Aphrodite Research Program, supported by the Institute of Science and Technology (IWT) of the Flemish Government.

Jueves, 14 Diciembre, 2006 - 10:04
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