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Samsung's OneNAND™ Flash Now Supported by QUALCOMM MSM™ Platform to Drive 3G Multimedia Features in More Handsets

Seoul, Korea -: Samsung Electronics Co., Ltd., the leader in advanced semiconductor technology, today announced that Samsung's OneNAND™ flash memory will be supported by new QUALCOMM Mobile Station Modem™ (MSM™) chipsets.

Support for OneNAND flash, already available on a few MSM chipsets, will be extended to a much wider range of upcoming multimedia-rich products now being optimized to take full advantage of OneNAND's high performance.

"OneNAND's performance coupled with the versatility of QUALCOMM's chipsets will help drive exciting new handset designs and applications," said Mike Concannon, vice president of strategic products for QUALCOMM CDMA Technologies. "We are pleased to be working with Samsung in helping to drive commercialization of the most compelling 3G multimedia capabilities."

The industry's fastest read/write speeds, delivered by OneNAND, will complement the performance needs of multimedia-rich MSM chipsets, especially those for 3G phones and for new services from carriers. As the industry quickly moves to 3G-based content-centric services, the 17MB/s write speed of OneNAND can support guaranteed continuously-streaming air downloads beyond the HSDPA (High-Speed Downlink Packet Access) specification.

Mobile phone manufacturers can receive OneNAND's cost-effective benefits on QUALCOMM's chipsets with integrated software packages, for complete design solutions.

"Samsung welcomes QUALCOMM's support for OneNAND, the industry's most popular fusion memory. OneNAND offers best-in-class performance for truly multimedia-rich, over-the-air experiences at high bandwidths," said Jon Kang, senior vice president, technical marketing, Samsung Semiconductor, Inc.

The extremely fast performance of OneNAND makes it not only well-suited for multimedia handset applications, but also for use as a non-volatile buffer in hybrid hard disks, and for other data computing applications.

OneNAND memory is now available with up to 2Gb capacity using 60nm production technology. That will be expanded to 4Gb at 50nm in 2007

Jueves, 21 Diciembre, 2006 - 07:28
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