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International Rectifier's New Line of Mid-Voltage RAD-Hard(™) MOSFETs Deliver 40% Better Device On-Resistance

  EL SEGUNDO, Calif - International Rectifier, IR® introduced the R6™ line of high-reliability (HiRel) 100V, 150V, 200V and 250V radiation-hardened (RAD-Hard™) MOSFETs for power management circuits.

"DC-DC converters, motor controls and solid-state switching circuits with input voltages of 24V to 48V in launch vehicles, satellites and other demanding applications can be made more compact, reliable and efficient with IR's new R6 devices," said Rick Furtney, International Rectifier Vice President, HiRel Sector Business Unit.

For example, the IRHNJ67130, with 0.042Ohms device on-resistance reduces power dissipation in power supply applications. Its low total gate charge of 35nC further reduces power consumption.

The new R6 MOSFETs have SEE ratings to LET of 90MeV and improved prompt dose response and SEE absorption versus other equivalent devices. In addition, the new devices are optimized for use in Hybrid - MIL-PRF-38534 "Class K" modules for satellite applications, including low Earth orbit (LEO), middle earth orbit (MEO), geostationary earth orbit (GEO) and deep space missions. Devices are available in surface-mount as well as new low-ohmic TO-254 and TO-257 packages. Tab-less TO-254 and TO-257 packages are also available.

Part NumberPackageBVDSS
I (max.)
IRHMS67160Low Ohmic TO-2541000.01145165
IRHYS67130CMLow Ohmic TO-2571000.0422050
IRHYS67134CMLow Ohmic TO-2571500.0901950
IRHMS67260Low Ohmic TO-2542000.02945240
IRHYS67230CMLow Ohmic TO-2572000.1301642
IRHMS67264Low Ohmic TO-2542500.04145220


Martes, 30 Agosto, 2005 - 01:09
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