"The new IRF6619 and IRF6633 chip set replaces four standard D-Pak MOSFETs per phase in processor power systems, cutting component count in half and reducing MOSFET board space by over 50% per phase, enabling a smaller form factor for workstations and servers," said Faisal Ahmad, Marketing Manager for DC-DC Computing Products.

The IRF6619, an ideal synchronous MOSFET, features a very low typical device on-resistance of 1.65 mOhm at 10VGS and 2.2mOhm at 4.5VGS, with a low reverse recovery charge of 22nC. The IRF6619 is housed in the MX medium can DirectFET package, occupying the same board area as an SO-8, but with a 0.7mm profile.

The IRF6633 is best-suited as a control FET, with very low gate charge and Miller charge of only 4nC, and has more than 43% reduction in on-resistance times gate charge compared to other 20VN devices on the market. The IRF6633 performance figure-of-merit for combined on-state resistance and gate charge is 38 mOhm-nC. The IRF6633 is housed in the MP medium can DirectFET package, occupying the same board area as SO-8 with only 0.7mm profile.

International Rectifier's patented DirectFET MOSFET packages present a whole new set of design advantages not previously delivered by standard plastic discrete packages. Their metal can construction enables dual-side cooling that effectively doubles the current handling capacity of high frequency DC-DC buck converters powering advanced microprocessors.