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New Vishay Siliconix High-Speed Integrated MOSFET+Drivers Provide Operation up t

  MALVERN, Pa. - Vishay Intertechnology, Inc released two new high-speed converter solutions that integrate the control MOSFET, the synchronous MOSFET, and driver circuit in a low-profile, high-performance PowerPAK® MLF 10x10 package. The new products simplify the single and multiphase dc-to-dc design process and provide 3 % higher efficiency compared with discrete solutions.

Intended for applications in servers, routers, point of load (POL) converters, and 3.3 V, 5 V, and 12-V intermediate bus architecture environments, the new devices not only conserve board space and power, but also enable higher power ratings in a compact footprint. The integration of the MOSFETs and driver serves to minimize the parasitic leakage inductance that can cause ringing and spikes at the switching node.

The SiC714CD10 and SiC711CD10 can be used along with any PWM IC or ASIC to produce a highly efficient buck converter. A low-side MOSFET control pin enables pre-biased start-up, which prevents an undesirable sinking current from a pre-charged output capacitor from causing problems, particularly in POL and server applications.

The new SiC714CD10, rated for input voltages from 3.3 V to 16 V, delivers up to 27 A of continuous output current in still air and is optimized for a 10 % duty ratio. Typical on-resistance values are 3 mΩ for the low-side and 10.2 mΩ for the high-side MOSFET.

Vishay’s SiC711CD10 is rated for input voltages from 3.3 V to 16 V and a 40 % duty ratio, and it provides continuous output current up to 25 A. Typical on-resistance values are 4 m for both the high- and low-side MOSFETs.

Both devices are optimized for 12-V to logic level conversion and are rated for a switching frequency range of 100 kHz to greater than 1 MHz. Their PowerPAK MLF 10x10 package provides low thermal impedance, and its simple pad geometries enable straightforward board layout and assembly.

Break-before-make operation provides “shoot-thru" immunity and minimizes dead time. These devices also feature undervoltage lockout and a turn-on/turn-off capability. An internal bootstrap diode further reduces the number of external components required.

Samples and production quantities of the new fast-switching MOSFETs with integrated driver are available now, with lead times of 12 weeks for larger orders.

Domingo, 22 Enero, 2006 - 11:00
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