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1N4099 THRU 1N4135

SILICON ZENER DIODE

LOW NOISE

6.8 VOLT THRU 100 VOLT

250mW, 5% TOLERANCE

DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4099 series
silicon Zener diode is designed for low leakage, low 
current, and low noise applications.

MAXIMUM RATINGS: (TA=25 °C) 

SYMBOL   UNITS

Power Dissipation 

PD 250 mW

Operating and Storage Junction Temperature 

TJ, Tstg 

-65 to +200 

°C

ELECTRICAL CHARACTERISTICS: (TA=25 °C) VF=1.1V MAX @ IF=200mA (for all types)

TYPE

ZENER

VOLTAGE

VZ @ IZT

TEST

CURRENT

MAXIMUM 

ZENER

IMPEDANCE

MAXIMUM

REVERSE

CURRENT

MAXIMUM

ZENER

CURRENT

MAXIMUM

NOISE

DENSITY

MIN

NOM

MAX

IZT

ZZT @ IZT

IR     @    VR

IZM

ND @ 250μA

V

V

V

μA

μA

V

mA

μV/  Hz

1N4099

6.460

6.8

7.140

250

200

10

5.2

35.0

40

1N4100

7.125

7.5

7.875

250

200

10

5.7

31.8

40

1N4101

7.790

8.2

8.610

250

200

1.0

6.3

29.0

40

1N4102

8.265

8.7

9.135

250

200

1.0

6.7

27.4

40

1N4103

8.645

9.1

9.555

250

200

1.0

7.0

26.2

40

1N4104

9.50

10

10.50

250

200

1.0

7.6

24.8

40

1N4105

10.45

11

11.55

250

200

0.05

8.5

21.6

40

1N4106

11.40

12

12.60

250

200

0.05

9.2

20.4

40

1N4107

12.35

13

13.65

250

200

0.05

9.9

19.0

40

1N4108

13.30

14

14.70

250

200

0.05

10.7

17.5

40

1N4109

14.25

15

15.75

250

100

0.05

11.4

16.3

40

1N4110

15.20

16

16.80

250

100

0.05

12.2

15.4

40

1N4111

16.15

17

17.85

250

100

0.05

13.0

14.5

40

1N4112

17.10

18

18.90

250

100

0.05

13.7

13.2

40

1N4113

18.05

19

19.95

250

150

0.05

14.5

12.5

40

1N4114

19.00

20

21.00

250

150

0.01

15.2

11.9

40

1N4115

20.90

22

23.10

250

150

0.01

16.8

10.8

40

1N4116

22.80

24

25.20

250

150

0.01

18.3

9.9

40

1N4117

23.75

25

26.25

250

150

0.01

19.0

9.5

40

1N4118

25.65

27

28.35

250

150

0.01

20.5

8.8

40

1N4119

26.60

28

29.40

250

200

0.01

21.3

8.5

40

1N4120

28.50

30

31.50

250

200

0.01

22.8

7.9

40

1N4121

31.35

33

34.65

250

200

0.01

25.1

7.2

40

MARKING: FULL PART NUMBER

DO-35 CASE

R1 (4-February 2014)

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1N4099 THRU 1N4135

SILICON ZENER DIODE

LOW NOISE

6.8 VOLT THRU 100 VOLT

250mW, 5% TOLERANCE

DO-35 CASE - MECHANICAL OUTLINE

MARKING: FULL PART NUMBER

ELECTRICAL CHARACTERISTICS - Continued: (TA=25 °C) VF=1.1V MAX @ IF=200mA (for all types)

TYPE

ZENER

VOLTAGE

VZ @ IZT

TEST

CURRENT

MAXIMUM 

ZENER

IMPEDANCE

MAXIMUM

REVERSE

CURRENT

MAXIMUM

ZENER

CURRENT

MAXIMUM

NOISE

DENSITY

MIN

NOM

MAX

IZT

ZZT @ IZT

IR     @    VR

IZM

ND @ 250μA

V

V

V

μA

μA

V

mA

μV/  Hz

1N4122

34.20

36

37.80

250

200

0.01

27.4

6.6

40

1N4123

37.05

39

40.95

250

200

0.01

29.7

6.1

40

1N4124

40.85

43

45.15

250

250

0.01

32.7

5.5

40

1N4125

44.65

47

49.35

250

250

0.01

35.8

5.1

40

1N4126

48.45

51

53.55

250

300

0.01

38.8

4.6

40

1N4127

53.20

56

58.80

250

300

0.01

42.6

4.2

40

1N4128

57.00

60

63.00

250

400

0.01

45.6

4.0

40

1N4129

58.90

62

65.10

250

500

0.01

47.1

3.8

40

1N4130

64.60

68

71.40

250

700

0.01

51.7

3.5

40

1N4131

71.25

75

78.75

250

700

0.01

57.0

3.1

40

1N4132

77.90

82

86.10

250

800

0.01

62.4

2.9

40

1N4133

82.65

87

91.35

250

1.0K

0.01

66.2

2.7

40

1N4134

86.45

91

95.55

250

1.2K

0.01

69.2

2.6

40

1N4135

95.00

100

105.0

250

1.5K

0.01

76.0

2.3

40

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R1 (4-February 2014)

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