DATA  SHEET

Product data sheet

 

Supersedes data of 2002 Jan 23

2004 Aug 10

 

DISCRETE SEMICONDUCTORS

 

1N4148; 1N4448
High-speed diodes

M3D176

2004 Aug 10

2

 

NXP Semiconductors

Product data sheet

High-speed diodes

1N4148; 1N4448

FEATURES

• Hermetically sealed leaded glass SOD27 (DO-35) 

package

• High switching speed: max. 4 ns
• General application
• Continuous reverse voltage: max. 100 V
• Repetitive peak reverse voltage: max. 100 V
• Repetitive peak forward current: max. 450 mA.

APPLICATIONS

• High-speed switching.

DESCRIPTION

The 1N4148 and 1N4448 are high-speed switching diodes 
fabricated in planar technology, and encapsulated in 
hermetically sealed leaded glass SOD27 (DO-35) 
packages.

MARKING

TYPE NUMBER

MARKING CODE

1N4148

1N4148PH or 4148PH

1N4448

1N4448

Fig.1

Simplified outline (SOD27; DO-35) and 
symbol.

The diodes are type branded.

handbook, halfpage

MAM246

k

a

ORDERING INFORMATION

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

1N4148

-

hermetically sealed glass package; axial leaded; 2 leads

SOD27

1N4448

2004 Aug 10

3

 

NXP Semiconductors

Product data sheet

High-speed diodes

1N4148; 1N4448

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

RRM

repetitive peak reverse voltage

-

100

V

V

R

continuous reverse voltage

-

100

V

I

F

continuous forward current

see te 

-

200

mA

I

FRM

repetitive peak forward current

-

450

mA

I

FSM

non-repetitive peak forward current

square wave; T

j

 = 25 

°C prior to 

surge; see

t = 1 

µs

-

4

A

t = 1 ms

-

1

A

t = 1 s

-

0.5

A

P

tot

total power dissipation

T

amb

 = 25 

°C; note 

-

500

mW

T

stg

storage temperature

-65

+200

°C

T

j

junction temperature

-

200

°C

ELECTRICAL CHARACTERISTICS
T

j

 = 25 

°C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

F

forward voltage

see

1N4148

I

F

 = 10 mA

-

1

V

1N4448

I

F

 = 5 mA

0.62

0.72

V

I

F

 = 100 mA

-

1

V

I

R

reverse current

V

R

 = 20 V; see 

25

nA

V

R

 = 20 V; T

j

 = 150 

°C; see-

50

µA

I

R

reverse current; 1N4448

V

R

 = 20 V; T

j

 = 100 

°C; see-

3

µA

C

d

diode capacitance

f = 1 MHz; V

R

 = 0 V; see 

-

4

pF

t

rr

reverse recovery time

when switched from I

F

 = 10 mA to 

I

R

 = 60 mA; R

L

 = 100 

Ω¦; 

measured at I

R

 = 1 mA; see

-

4

ns

V

fr

forward recovery voltage

when switched from I

F

 = 50 mA; 

t

r

 

= 20 ns; see

-

2.5

V

THERMAL CHARACTERISTICS

Note

1.

Device mounted on a printed-circuit board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R

th(j-tp)

thermal resistance from junction to tie-point

lead length 10 mm

240

K/W

R

th(j-a)

thermal resistance from junction to ambient

lead length 10 mm; note 

350

K/W

2004 Aug 10

4

 

NXP Semiconductors

Product data sheet

High-speed diodes

1N4148; 1N4448

GRAPHICAL DATA

0

100

200

300

200

0

100

mbg451

T

amb

 (

°

C)

I

F

(mA)

Fig.2

Maximum permissible continuous forward 
current as a function of ambient 
temperature.

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

Fig.3

Forward current as a function of forward 
voltage.

handbook, halfpage

0

1

2

600

0

200

400

MBG464

VF (V)

IF

(mA)

(1)

(2)

(3)

(1) T

j

 = 175 

°C; typical values.

(2) T

j

 = 25 

°C; typical values.

(3) T

j

 = 25 

°C; maximum values.

Fig.4  Maximum permissible non-repetitive peak forward current as a function of pulse duration.

Based on square wave currents.

T

j

 = 25 

°C prior to surge.

handbook, full pagewidth

MBG704

10

tp (

µ

s)

1

IFSM

(A)

10

2

10

-

1

10

4

10

2

10

3

10

1

2004 Aug 10

5

 

NXP Semiconductors

Product data sheet

High-speed diodes

1N4148; 1N4448

0

100

T

j

 (

°

C)

200

10

3

10

2

10

-

1

10

-

2

10

(1)

1

I

R

(

µ

A)

mgd290

(2)

Fig.5

Reverse current as a function of junction 
temperature.

(1) V

R

 = 75 V; typical values.

(2) V

R

 = 20 V; typical values.

Fig.6

Diode capacitance as a function of reverse 
voltage; typical values.

f = 1 MHz; T

j

 = 25 

°C.

handbook, halfpage

0

10

20

1.2

1.0

0.6

0.4

0.8

MGD004

VR (V)

Cd

(pF)

2004 Aug 10

6

 

NXP Semiconductors

Product data sheet

High-speed diodes

1N4148; 1N4448

Fig.7  Reverse recovery voltage test circuit and waveforms.

handbook, full pagewidth

t rr

(1)

I F

t

output signal

t r

t

t p

10%

90%

VR

input signal

V = V      I   x R

R

F

S

R   = 50

S

Ω¦

IF

D.U.T.

R  = 50

i

Ω¦

SAMPLING

OSCILLOSCOPE

MGA881

(1) I

R

 = 1 mA.

Fig.8  Forward recovery voltage test circuit and waveforms.

t r

t

t p

10%

90%

I

input 

signal

R   = 50

S

Ω¦

I

R  = 50

i

Ω¦

OSCILLOSCOPE

Ω¦

1 k

Ω¦

450 

D.U.T.

MGA882

V fr

t

output 

signal

V

2004 Aug 10

7

 

NXP Semiconductors

Product data sheet

High-speed diodes

1N4148; 1N4448

PACKAGE OUTLINE

 REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

 IEC

 JEDEC

JEITA

Note

1. The marking band indicates the cathode.

 SOD27

DO-35

A24

SC-40

97-06-09
05-12-22

Hermetically sealed glass package; axial leaded; 2 leads

SOD27

UNIT

b

max.

mm

0.56

D

max.

G1

max.

25.4

4.25

1.85

L

min.

DIMENSIONS (mm are the original dimensions)

G1

L

D

L

b

(1)

0

1

2 mm

scale

2004 Aug 10

8

 

NXP Semiconductors

Product data sheet

High-speed diodes

1N4148; 1N4448

DATA SHEET STATUS

Notes

1.

Please consult the most recently issued document before initiating or completing a design.

2.

The product status of device(s) described in this document may have changed since this document was published 
and may differ in case of multiple devices. The latest product status information is available on the Internet at 
URL http://www.nxp.com. 

DOCUMENT

ST

PRODUCT 
ST

DEFINITION

Objective data sheet

Development

This document contains data from the objective specification for product 
development. 

Preliminary data sheet

Qualification

This document contains data from the preliminary specification. 

Product data sheet

Production

This document contains the product specification. 

DISCLAIMERS

General 

•Ž¯ Information in this document is believed to be 

accurate and reliable. However, NXP Semiconductors 
does not give any representations or warranties, 
expressed or implied, as to the accuracy or completeness 
of such information and shall have no liability for the 
consequences of use of such information.

Right to make changes 

•Ž¯ NXP Semiconductors 

reserves the right to make changes to information 
published in this document, including without limitation 
specifications and product descriptions, at any time and 
without notice. This document supersedes and replaces all 
information supplied prior to the publication hereof.

Suitability for use 

 •Ž¯ NXP Semiconductors products are 

not designed, authorized or warranted to be suitable for 
use in medical, military, aircraft, space or life support 
equipment, nor in applications where failure or malfunction 
of an NXP Semiconductors product can reasonably be 
expected to result in personal injury, death or severe 
property or environmental damage. NXP Semiconductors 
accepts no liability for inclusion and/or use of NXP 
Semiconductors products in such equipment or 
applications and therefore such inclusion and/or use is at 
the customer’s own risk.

Applications  

•Ž¯ Applications that are described herein for 

any of these products are for illustrative purposes only. 
NXP Semiconductors makes no representation or 
warranty that such applications will be suitable for the 
specified use without further testing or modification.

Limiting values 

•Ž¯ Stress above one or more limiting 

values (as defined in the Absolute Maximum Ratings 
System of IEC 60134) may cause permanent damage to 
the device. Limiting values are stress ratings only and 
operation of the device at these or any other conditions 

above those given in the Characteristics sections of this 
document is not implied. Exposure to limiting values for 
extended periods may affect device reliability.

Terms and conditions of sale 

•Ž¯

No offer to sell or license 

•Ž¯ Nothing in this document 

may be interpreted or construed as an offer to sell products 
that is open for acceptance or the grant, conveyance or 
implication of any license under any copyrights, patents or 
other industrial or intellectual property rights.

Export control 

•Ž¯ This document as well as the item(s) 

described herein may be subject to export control 
regulations. Export might require a prior authorization from 
national authorities.

Quick reference data 

•Ž¯ The Quick reference data is an 

extract of the product data given in the Limiting values and 
Characteristics sections of this document, and as such is 
not complete, exhaustive or legally binding. 

NXP Semiconductors

Contact information

For additional information please visit: http://www.nxp.com

 

For sales offices addresses send e-mail to: salesaddresses@nxp.com

 

© NXP B.V. 2009

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed 
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license 
under patent- or other industrial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were 
made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands 

R76/05/pp9

 Date of release: 2004 Aug 10 

Document order number:  9397 750 13541