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  Semiconductor Components Industries, LLC, 2013

November, 2013 - Rev. 15

1

Publication Order Number:

1N5333B/D

1N53 Series

5 Watt Surmetict

40 Zener Voltage Regulators

This is a complete series of 5 Watt Zener diodes with tight limits and

better operating characteristics that reflect the superior capabilities of
silicon-oxide passivated junctions. All this in an axial lead,
transfer-molded plastic package that offers protection in all common
environmental conditions.

Features

Zener Voltage Range - 3.3 V to 200 V

ESD Rating of Class 3 (>16 kV) per Human Body Model

Surge Rating of up to 180 W @ 8.3 ms

Maximum Limits Guaranteed on up to Six Electrical Parameters

Pb-Free Packages are Available*

Mechanical Characteristics
CASE:

 Void free, transfer-molded, thermosetting plastic

FINISH:

 All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

260

C, 1/16 in. from the case for 10 seconds

POLARITY:

 Cathode indicated by polarity band

MOUNTING POSITION:

 Any

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Max. Steady State Power Dissipation

@ T

L

 = 25 C, Lead Length = 3/8 in

Derate above 25 C

Junction-to-Lead Thermal Resistance

P

D

q

JL

5

40
25

W

mW/ C

C/W

Operating and Storage

Temperature Range

T

J

, T

stg

-65 to +200

C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Max operating temperature for DC conditions is 150 C, but not to exceed

200 C for pulsed conditions with low duty cycle or non-repetitive.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

AXIAL LEAD

CASE 017AA

PLASTIC

Cathode

Anode

MARKING DIAGRAM

A

= Assembly Location

1N53xxB = Device Number

(Refer to Tables on Pages 3 & 4)

YY

= Year

WW

= Work Week

G

= Pb-Free Package

A

1N

53xxB

YYWWG

G

Device

Package

Shipping

ORDERING INFORMATION

For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1N53xxB, G

Axial Lead

(Pb-Free)

1000 Units/Box

1N53xxBRL, G

Axial Lead

(Pb-Free)

4000/Tape & Reel

(Note: Microdot may be in either location)

background image

Zener Voltage Regulator

I

F

V

I

I

R

I

ZT

V

R

V

Z

V

F

1N53 Series

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS 

(T

A

 = 25 C unless

otherwise noted, V

F

 = 1.2 V Max @ I

F

 = 1.0 A for all types)

Symbol

Parameter

V

Z

Reverse Zener Voltage @ I

ZT

I

ZT

Reverse Current

Z

ZT

Maximum Zener Impedance @ I

ZT

I

ZK

Reverse Current

Z

ZK

Maximum Zener Impedance @ I

ZK

I

R

Reverse Leakage Current @ V

R

V

R

Breakdown Voltage

I

F

Forward Current

V

F

Forward Voltage @ I

F

I

R

Maximum Surge Current @ T

A

 = 25 C

DV

Z

Reverse Zener Voltage Change

I

ZM

Maximum DC Zener Current

ELECTRICAL CHARACTERISTICS 

(T

A

 = 25 C unless otherwise noted, V

F

 = 1.2 V Max @ I

F

 = 1.0 A for all types)

Device

Device

Marking

Zener Voltage 

Zener Impedance 

Leakage

Current

I

R

DV

Z

I

ZM

V

Z

 (Volts)

@ I

ZT

Z

ZT

 @ I

ZT

Z

ZK

 @ I

ZK

I

ZK

I

R

 @ V

R

Min

Nom

Max

mA

W

W

mA mA Max Volts

A

Volts

mA

1N5333B

1N5333B

3.14

3.3

3.47

380

3

400

1

300

1

20

0.85

1440

1N5334B

1N5334B

3.42

3.6

3.78

350

2.5

500

1

150

1

18.7

0.8

1320

1N5335B

1N5335B

3.71

3.9

4.10

320

2

500

1

50

1

17.6

0.54

1220

1N5336B

1N5336B

4.09

4.3

4.52

290

2

500

1

10

1

16.4

0.49

1100

1N5337B

1N5337B

4.47

4.7

4.94

260

2

450

1

5

1

15.3

0.44

1010

1N5338B

1N5338B

4.85

5.1

5.36

240

1.5

400

1

1

1

14.4

0.39

930

1N5339B

1N5339B

5.32

5.6

5.88

220

1

400

1

1

2

13.4

0.25

865

1N5340B

1N5340B

5.70

6.0

6.30

200

1

300

1

1

3

12.7

0.19

790

1N5341B

1N5341B

5.89

6.2

6.51

200

1

200

1

1

3

12.4

0.1

765

1N5342B

1N5342B

6.46

6.8

7.14

175

1

200

1

10

5.2

11.5

0.15

700

1N5343B

1N5343B

7.13

7.5

7.88

175

1.5

200

1

10

5.7

10.7

0.15

630

1N5344B

1N5344B

7.79

8.2

8.61

150

1.5

200

1

10

6.2

10

0.2

580

1N5345B

1N5345B

8.27

8.7

9.14

150

2

200

1

10

6.6

9.5

0.2

545

1N5346B

1N5346B

8.65

9.1

9.56

150

2

150

1

7.5

6.9

9.2

0.22

520

1N5347B

1N5347B

9.50

10

10.5

125

2

125

1

5

7.6

8.6

0.22

475

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

2. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of  5%.

3. ZENER VOLTAGE (V

Z

) and IMPEDANCE (I

ZT

 and I

ZK

): Test conditions for zener voltage and impedance are as follows: I

Z

 is applied

40  10 ms prior to reading. Mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode

(T

A

 = 25 C +8 C, -2 C).

4. SURGE CURRENT (I

R

): Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width,

PWtween

1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in

A

 = 25 C +8 C, -2 C).

5. VOLTAGE REGULATION (DV

Z

): The conditions for voltage regulation are as follows: V

Z

 measurements are made at 10% and then at 50%

of the I

Z

 max value listed in the electrical characteristics table. The test current time duration for each V

Z

 measurement is 40  10 ms. Mounting

contact located as specified in Note 2 (T

A

 = 25 C +8 C, -2 C).

6. MAXIMUM REGULATOR CURRENT (I

ZM

): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,

it applies only to the B-suffix device. The actual I

ZM

 for any device may not exceed the value of 5 watts divided by the actual V

Z

 of the device.

T

L

 = 25 C at 3/8 maximum from the device body.

The G suffix indicates Pb-Free package or Pb-Free packages are available.

background image

1N53 Series

http://onsemi.com

3

ELECTRICAL CHARACTERISTICS 

(T

A

 = 25 C unless otherwise noted, V

F

 = 1.2 V Max @ I

F

 = 1.0 A for all types)

Device

Device

Marking

Zener Voltage 

Zener Impedance 

Leakage

Current

I

R

DV

Z

(Note

I

ZM

(Note)

V

Z

 (Volts)

@ I

ZT

Z

ZT

 @ I

ZT

Z

ZK

 @ I

ZK

I

ZK

I

R

 @ V

R

Min

Nom

Max

mA

W

W

mA mA Max Volts

A

Volts

mA

1N5348B

1N5348B 10.45

11

11.55

125

2.5

125

1

5

8.4

8.0

0.25

430

1N5349B

1N5349B

11.4

12

12.6

100

2.5

125

1

2

9.1

7.5

0.25

395

1N5350B

1N5350B 12.35

13

13.65

100

2.5

100

1

1

9.9

7.0

0.25

365

1N5351B

1N5351B

13.3

14

14.7

100

2.5

75

1

1

10.6

6.7

0.25

340

1N5352B

1N5352B 14.25

15

15.75

75

2.5

75

1

1

11.5

6.3

0.25

315

1N5353B

1N5353B

15.2

16

16.8

75

2.5

75

1

1

12.2

6.0

0.3

295

1N5354B

1N5354B 16.15

17

17.85

70

2.5

75

1

0.5

12.9

5.8

0.35

280

1N5355B

1N5355B

17.1

18

18.9

65

2.5

75

1

0.5

13.7

5.5

0.4

264

1N5356B

1N5356B 18.05

19

19.95

65

3

75

1

0.5

14.4

5.3

0.4

250

1N5357B

1N5357B

19

20

21

65

3

75

1

0.5

15.2

5.1

0.4

237

1N5358B

1N5358B

20.9

22

23.1

50

3.5

75

1

0.5

16.7

4.7

0.45

216

1N5359B

1N5359B

22.8

24

25.2

50

3.5

100

1

0.5

18.2

4.4

0.55

198

1N5360B

1N5360B 23.75

25

26.25

50

4

110

1

0.5

19

4.3

0.55

190

1N5361B

1N5361B 25.65

27

28.35

50

5

120

1

0.5

20.6

4.1

0.6

176

1N5362B

1N5362B

26.6

28

29.4

50

6

130

1

0.5

21.2

3.9

0.6

170

1N5363B

1N5363B

28.5

30

31.5

40

8

140

1

0.5

22.8

3.7

0.6

158

1N5364B

1N5364B 31.35

33

34.65

40

10

150

1

0.5

25.1

3.5

0.6

144

1N5365B

1N5365B

34.2

36

37.8

30

11

160

1

0.5

27.4

3.5

0.65

132

1N5366B

1N5366B 37.05

39

40.95

30

14

170

1

0.5

29.7

3.1

0.65

122

1N5367B

1N5367B 40.85

43

45.15

30

20

190

1

0.5

32.7

2.8

0.7

110

1N5368B

1N5368B 44.65

47

49.35

25

25

210

1

0.5

35.8

2.7

0.8

100

1N5369B

1N5369B 48.45

51

53.55

25

27

230

1

0.5

38.8

2.5

0.9

93

1N5370B

1N5370B

53.2

56

58.8

20

35

280

1

0.5

42.6

2.3

1.0

86

1N5371B

1N5371B

57

60

63

20

40

350

1

0.5

45.5

2.2

1.2

79

1N5372B

1N5372B

58.9

62

65.1

20

42

400

1

0.5

47.1

2.1

1.35

76

1N5373B

1N5373B

64.6

68

71.4

20

44

500

1

0.5

51.7

2.0

1.52

70

1N5374B

1N5374B 71.25

75

78.75

20

45

620

1

0.5

56

1.9

1.6

63

1N5375B

1N5375B

77.9

82

86.1

15

65

720

1

0.5

62.2

1.8

1.8

58

1N5377B

1N5377B 86.45

91

95.55

15

75

760

1

0.5

69.2

1.6

2.2

52.5

1N5378B

1N5378B

95

100

105

12

90

800

1

0.5

76

1.5

2.5

47.5

1N5380B

1N5380B

114

120

126

10

170

1150

1

0.5

91.2

1.3

2.5

39.5

1N5381B

1N5381B 123.5

130

136.5

10

190

1250

1

0.5

98.8

1.2

2.5

36.6

1N5383B

1N5383B 142.5

150

157.5

8

330

1500

1

0.5

114

1.1

3.0

31.6

1N5384B

1N5384B

152

160

168

8

350

1650

1

0.5

122

1.1

3.0

29.4

1N5386B

1N5386B

171

180

189

5

430

1750

1

0.5

137

1.0

4.0

26.4

1N5387B

1N5387B 180.5

190

199.5

5

450

1850

1

0.5

144

0.9

5.0

25

1N5388B

1N5388B

190

200

210

5

480

1850

1

0.5

152

0.9

5.0

23.6

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

7. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of  5%.

8. ZENER VOLTAGE (V

Z

) and IMPEDANCE (I

ZT

 and I

ZK

): Test conditions for zener voltage and impedance are as follows: I

Z

 is applied

40  10 ms prior to reading. Mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode

(T

= 25 C +8 C, -2 C).

9. SURGE CURRENT (I

R

): Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width,

PWtween

1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in

A

 = 25 C +8 C, -2 C).

10.VOLTAGE REGULATION (DV

Z

): The conditions for voltage regulation are as follows: V

Z

 measurements are made at 10% and then at 50%

of the I

Z

 max value listed in the electrical characteristics table. The test current time duration for each V

Z

 measurement is 40  10 ms. Mounting

contact located as specified in Note 7 (T

A

 = 25 C +8 C, -2 C).

11. MAXIMUM REGULATOR CURRENT (I

ZM

): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,

it applies only to the B-suffix device. The actual I

ZM

 for any device may not exceed the value of 5 watts divided by the actual V

Z

 of the device.

T

L

 = 25 C at 3/8 maximum from the device body.

The G suffix indicates Pb-Free package or Pb-Free packages are available.

background image

1N53 Series

http://onsemi.com

4

Figure 1. Typical Thermal Resistance

40

30

20

10

0

0

0.2

0.4

0.6

0.8

1

EQUAL CONDUCTION

THROUGH EACH LEAD

L

L

L, LEAD LENGTH TO HEATSINK (INCH)

JL

, JUNCTIONT

OLEAD 

THERMAL

 RESIST

ANCE (

Θ

C/W)

TEMPERATURE COEFFICIENTS

Figure 2. Temperature Coefficient-Range for Units 3 to 10 Volts

Figure 3. Temperature Coefficient-Range for Units 10 to 220 Volts

V

Z

, ZENER VOLTAGE @ I

ZT

 (VOLTS)

10

8

6

4

2

0

-2

3

4

5

6

7

8

9

10

RANGE

300
200

100

50

30
20

10

5

0

20

40

60

80

100 120

140

160 180

200 220

V

Z

, ZENER VOLTAGE @ I

ZT

 (VOLTS)

Θ

V

Z

, TEMPERA

TURE 

COEFFICIENT

(mV/

C) @ I

ZT

Θ

V

Z

, TEMPERA

TURE 

COEFFICIENT

(mV/

C) @ I

ZT

RANGE

background image

1N53 Series

http://onsemi.com

5

0.5

Figure 4. Typical Thermal Response

L, Lead Length = 3/8 Inch

Figure 5. Maximum Non-Repetitive Surge Current

versus Nominal Zener Voltage

Θ

JL

(t, D), 

TRANSIENT

 THERMAL

 RESIST

ANCE

JUNCTIONT

OLEAD (

C/W)

0.01

0.0000001

DUTY CYCLE, D = t

1

/t

2

SINGLE PULSE D T

JL

 = q

JL

(t)P

PK

REPETITIVE PULSES D T

JL

 = q

JL

(t,D)P

PK

q

JL

(t,D) = D * q

JL 

()+(1-D) * q

JL

(t)

[where q

JL

(t) is D = 0 curve]

P

PK

t

1

t

2

t, TIME (SECONDS)

I r

, PEAK SURGE CURRENT

 (AMPS)

40

20

10

4

2

1

0.1

0.2

0.4

3

4

6

8 10

20

30

40

60 80 100

200

*SQUARE WAVE

PW=100ms*

PW=1000ms*

PW=1ms*

PW=8.3ms*

NOMINAL V

Z

 (V)

30
20

10

0.1

0.2

0.5

1

2

5

1

10

100

1000

1000

100

10

1

0.1

1

2

3

4

5

6

7

8

9

10

I Z

, ZENER CURRENT

 (mA)

PW, PULSE WIDTH (ms)

V

Z

, ZENER VOLTAGE (VOLTS)

Figure 6. Peak Surge Current versus Pulse Width

Figure 7. Zener Voltage versus Zener Current

V

Z

= 3.3 thru 10 Volts

V

Z

=200V

V

Z

=3.3V

PLOTTED FROM INFORMATION

T

C

=25

C

T=25

C

I r

, PEAK SURGE CURRENT

 (AMPS)

I Z

, ZENER CURRENT

 (mA)

V

Z

, ZENER VOLTAGE (VOLTS)

1000

100

10

1

0.1

10

20

30

40

50

60

70

80

T=25

C

Figure 8. Zener Voltage versus Zener Current

V

Z

 = 11 thru 75 Volts

0.000001 0.00001

0.0001

0.001

0.01

0.1

1

10

100

0.1

1

10

100

D = 0

0.2

0.1

0.05

0.02

0.01

background image

1N53 Series

http://onsemi.com

6

100

10

1

0.1

80

100

120

140

160

180

200

220

V

Z

, ZENER VOLTAGE (VOLTS)

I Z

, ZENER CURRENT

 (mA)

Figure 9. Zener Voltage versus Zener Current

V

Z

 = 82 thru 200 Volts

APPLICATION NOTE

Since the actual voltage available from a given Zener

diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:

Lead Temperature, T

L

, should be determined from:

T

L

 = q

LA

 P

D

 + T

A

q

LA

 is the lead-to-ambient thermal resistance and P

D

 is the

power dissipation.

Junction Temperature, T

J

, may be found from:

T

J

 = T

L

 + DT

JL

DT

JL

 is the increase in junction temperature above the lead

temperature and may be found from Figure 4 for a train of
.

DT

JL

 = q

JL

 P

D

For worst-case design, using expected limits of I

Z

, limits

of P

D

 and the extremes of T

J

  (

DT

J

) may be estimated.

Changes in voltage, V

Z

, can then be found from:

DV = q

VZ

 DT

J

q

VZ

, the Zener voltage temperature coefficient, is found

from Figures 2 and 3.

Under high power-pulse operation, the Zener voltage will

vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.

Data of Figure 4 should not be used to compute surge

capability. Surge re
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation

background image

1N53 Series

http://onsemi.com

7

PACKAGE DIMENSIONS

SURMETIC 40, AXIAL LEAD

CASE 017AA

ISSUE O

B

D

F

K

A

F

K

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

A

0.330

0.350

8.38

8.89

B

0.130

0.145

3.30

3.68

D

0.037

0.043

0.94

1.09

F

---

0.050

---

1.27

K

1.000

1.250

25.40

31.75

NOTES:

1. CONTROLLING DIMENSION:  INCH
2. LEAD DIAMETER AND FINISH NOT CONTROLLED

WITHIN DIMENSION F.

3. CATHODE BAND INDICATES POLARITY

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1N5333B/D

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