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2SB715, 2SB716, 2SB716A
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier
Complementary pair with 2SD755, 2SD756 and 2SD756A
Outline
3
2
1
1. Emitter
2. Collector
3. Base
TO-92MOD
2SB715, 2SB716, 2SB716A
2
Absolute Maximum Ratings (Ta = 25 °C)
Item
Symbol
2SB715
2SB716
2SB716A
Unit
Collector to base voltage
V
CBO
-100
-120
-140
V
Collector to emitter voltage
V
CEO
-100
-120
-140
V
Emitter to base voltage
V
EBO
-5
-5
-5
V
Collector current
I
C
-50
-50
-50
mA
Collector power dissipation
P
C
750
750
750
mW
Junction temperature
Tj
150
150
150
°
C
Storage temperature
Tstg
-55 to +150
-55 to +150
-55 to +150
°
C
Electrical Characteristics (Ta = 25 °C)
2SB715
2SB716
2SB716A
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
-100
-120
-140
V
I
C
= -10
΅
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
-100
-120
-140
V
I
C
= -1 mA,
R
BE
=
Collector cutoff current
I
CBO
-0.5
΅
A
V
CB
= -80 V, I
E
= 0
-0.5
-0.5
΅
A
V
CB
= -100 V, I
E
= 0
DC current transfer ratio h
FE1
*
1
250
800
250
800
250
500
V
CE
= -12 V,
I
C
= -2 mA
h
FE2
125
125
125
V
CE
= -12 V,
I
C
= -10 mA
Base to emitter voltage
V
BE
-0.75
-0.75
-0.75 V
V
CE
= -12 V,
I
C
= -2 mA
Collector to emitter
saturation voltage
V
CE(sat)
-0.2
-0.2
-0.2
V
I
C
= -10 mA,
I
B
= -1 mA
Gain bandwidth product f
T
150
150
150
MHz V
CE
= -12 V,
I
C
= -5 mA
Collector output
capacitance
Cob
1.8
1.8
1.8
pF
V
CB
= -25 V, I
E
= 0,
f = 1 MHz
Note:
1. The 2SB715, 2SB716 and 2SB716A are grouped by h
FE1
as follows.
D
E
2SB715, 2SB716 250 to 500
400 to 800
2SB716A
250 to 500
2SB715, 2SB716, 2SB716A
3
0
50
100
150
Ambient Temperature Ta (
°
C)
Collector Power Dissipation Pc (mW)
Maximum Collector Dissipation Curve
750
500
250
Typical Output Characteristics
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
0
-10
-50
-20
-30
-40
-10
-8
-6
-4
-2
I
B
= 0
-2
΅
A
-4
-6
-8
-10
-12
-14
-16
Typical Transfer Characteristics
Collector Current I
C
(mA)
-0.01
-0.03
-0.1
-0.3
-1.0
-3
-10
Base to Emitter Voltage V
BE
(V)
-0.2
-0.4
-0.6
-0.8
V
CE
= -12 V
Pulse
Ta = 100
°
C
75 50 25
-25
0
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
-0.01 -0.03
-0.1
-0.3
-1.0
-3
-10
-30
0
200
400
600
800
1,000
DC Current Transfer Ratio h
FE
Ta = 100
°
C
0
-25
V
CE
= -12 V
Pulse
75 50 25
2SB715, 2SB716, 2SB716A
4
Gain Bandwidth Product vs.
Collector Current
5
10
30
100
300
1,000
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(MHz)
-0.01 -0.03
-0.1
-0.3
-1.0
-3
-10
-30-50
V
CE
= -12 V
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
0.5
1.0
2
5
10
20
50
-1
-3
-10
-30
-100
f = 1 MHz
I
E
= 0
Area of Safe Operation
-1
-2
-5
-10
-20
-50
-100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
-5
-10 -20
-50 -100 -200
-500
Ta = 25
°
C
P
C
= 750 mW
DC Operation
I
C
(max)
(-50 V, -15 mA)
2SB716
2SB716A
(-100 V, -7.5 mA)
(-120 V, -5 mA)
(-140 V, -4 mA)
2SB715
0.60 Max
0.5
±
0.1
4.8
±
0.3
3.8
±
0.3
8.0
±
0.5
0.7
2.3 Max
10.1 Min
0.5
1.27
2.54
0.65
±
0.1
0.75 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
Conforms
0.35 g
Unit: mm
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.
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