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PN2222A 

— NPN General-Purpose Amplifier

© 2004 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

PN2222A Rev. 1.1.0

July 2014

PN2222A
NPN General-Purpose Amplifier

Features

• This device is for use as a medium power amplifier and 
    switch requiring collector currents up to 500mA.

Ordering Information

Absolute Maximum Ratings

(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

A

 = 25

°C unless otherwise noted.

Note:

1. These rating are based on a maximum junction temperature of 150 

°C. 

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
    low-duty-cycle operation.

Part Number

Top Mark

Package

Packing Method

PN2222ABU

PN2222A

TO-92 3L

Bulk

PN2222ATA

PN2222A

TO-92 3L

Ammo

PN2222ATF

PN2222A

TO-92 3L

Tape and Reel

PN2222ATFR

PN2222A

TO-92 3L

Tape and Reel

Symbol

Parameter

Value

Unit

V

CEO

Collector-Emitter Voltage

40

V

V

CBO

Collector-Base Voltage

75

V

V

EBO

Emitter-Base Voltage

6.0

V

I

C

Collector Current

1.0

A

T

STG

Operating and Storage Junction Temperature Range

-55 to 150

°C

E B C

TO-92

background image

PN2222A 

— NPN General-Purpose Amplifier

© 2004 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

PN2222A Rev. 1.1.0

Thermal Characteristics

(3)

Values are at T

A

 = 25

°C unless otherwise noted.

Note:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Symbol

Parameter

Max.

Unit

P

D

Total Device Dissipation

625

mW

Derate Above 25

°C

5.0

mW/

°C

R

ΘJC

Thermal Resistance, Junction to Case

83.3

°C/W

R

ΘJA

Thermal Resistance, Junction to Ambient

200

°C/W

background image

PN2222A 

— NPN General-Purpose Amplifier

© 2004 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

PN2222A Rev. 1.1.0

Electrical Characteristics 

Values are at T

A

 = 25 °C unless otherwise noted.

Note:

4. Pulse test: pulse width 

≤ 300 μs, duty cycle ≤ 2.0%.

Symbol

Parameter

Conditions

Min.

Max.

Unit

Off Characteristics

BV

(BR)CEO

Collector-Emitter Breakdown 
Voltage

(4)

I

= 10 mA, I

= 0

40

V

BV

(BR)CBO

Collector-Base Breakdown Voltage

I

C

 = 10 

μA, I

E

 = 0

75

V

BV

(BR)EBO

Emitter-Base Breakdown Voltage

I

E

 = 10 

μA, I

C

 = 0

6.0

V

I

CEX

Collector Cut-Off Current

V

CE

 = 60 V, V

EB(off)

 = 3.0 V

10

nA

I

CBO

Collector Cut-Off Current

V

CB

 = 60 V, I

E

 = 0

0.01

μA

V

CB

 = 60 V, I

E

 = 0, T

A

 = 125

°C

10

I

EBO

Emitter Cut-Off Current

V

EB

 = 3.0 V, I

C

 = 0

10

nA

I

BL

Base Cut-Off Current

V

CE

 = 60 V, V

EB(off)

 = 3.0 V

20

nA

On Characteristics

h

FE

DC Current Gain

I

C

 = 0.1 mA, V

CE

 = 10 V

35

I

C

 = 1.0 mA, V

CE

 = 10 V

50

I

C

 = 10 mA, V

CE

 = 10 V

75

I

C

 = 10 mA, V

CE

 = 10 V, 

T

A

 = -55

°C

35

I

C

 = 150 mA, V

CE

 = 10 V

(4)

100

300

I

C

 = 150 mA, V

CE

 = 1 V

(4)

50

I

C

 = 500 mA, V

CE

 = 10 V

(4)

40

V

CE(sat)

Collector-Emitter Saturation Voltage

(4)

I

C

 = 150 mA, I

= 15 mA

0.3

V

I

C

 = 500 mA, I

= 50 mA

1.0

V

BE(sat)

Base-Emitter Saturation Voltage

(4)

I

C

 = 150 mA, I

= 15 mA

0.6

1.2

V

I

C

 = 500 mA, I

= 50 mA

2.0

Small Signal Characteristics

f

T

Current Gain Bandwidth Product

I

C

 = 20 mA, V

CE

 = 20 V, 

f = 100 MHz

300

MHz

C

obo

Output Capacitance

V

CB

 = 10 V, I

E

 = 0, f = 1 MHz

8.0

pF

C

ibo

Input Capacitance

V

EB

 = 0.5 V, I

C

 = 0, f = 1 MHz

25

pF

rb’C

c

Collector Base Time Constant

I

C

 = 20 mA, V

CB

 = 20 V, 

f = 31.8 MHz

150

pS

NF

Noise Figure

I

C

 = 100 

μA, V

CE

 = 10 V,

R

S

 = 1.0 k

Ω, f = 1.0 kHz

4.0

dB

Re(h

ie

)

Real Part of Common-Emitter 
High Frequency Input Impedance

I

C

 = 20 mA, V

CE

 = 20 V, 

f = 300 MHz

60

Switching Characteristics

t

d

Delay Time

V

CC

 = 30 V, V

EB(off)

 = 0.5 V, 

I

C

 = 150 mA, I

B1

 = 15 mA

10

ns

t

r

Rise Time

25

ns

t

s

Storage Time

V

CC

 = 30 V, I

C

 = 150 mA,

I

B1

 = I

B2

 = 15 mA

225

ns

t

f

Fall Time

60

ns

background image

PN2222A 

— NPN General-Purpose Amplifier

© 2004 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

PN2222A Rev. 1.1.0

Physical Dimensions

Figure 1. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner 
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or 
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the 
warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf

.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:                                                                                        

http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf

.

        D

TO-92 (Bulk)

background image

PN2222A 

— NPN General-Purpose Amplifier

© 2004 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

PN2222A Rev. 1.1.0

Physical Dimensions 

(Continued)

Figure 2. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner 
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or 
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the 
warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf

.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf

.

TO-92 (Ammo, Tape and Reel)

background image

© Fairchild Semiconductor Corporation 

 

www.fairchildsemi.com 

 

 

TRADEMARKS 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not 
intended to be an exhaustive list of all such trademarks. 

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®

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®

 

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®

 

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¥-3

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¥-6 

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®*

 

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¥ 

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௕º

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE 
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WHICH COVERS THESE PRODUCTS. 

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Definition of Terms 

Datasheet Identification 

Product Status 

Definition 

Advance Information 

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Datasheet contains the design specifications for product development. Specifications may change 
in any manner without notice. 

Preliminary First 

Production 

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild 
Semiconductor reserves the right to make changes at any time without notice to improve design. 

No Identification Needed 

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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make 
changes at any time without notice to improve the design. 

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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  
The datasheet is for reference information only. 

Rev. I68 

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