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2N2905
Low Power Bipolar Transistors
Page 1
07/04/06 V1.0
Features:
•• PNP Silicon Planar switching Transistors.
•• General Purpose Transistor.
TO-39 Metal Can Package
Pin Configuration
1. Emitter
2. Base
3. Collector
Dimensions : Millimetres
Dimensions
Minimum
Maximum
A
8.50
9.39
B
7.74
8.50
C
6.09
6.60
D
0.40
0.53
E
-
0.88
F
2.41
2.66
G
4.82
5.33
H
0.71
0.86
J
0.73
1.02
K
12.70
-
L
42 °
48 °
2N2905
Low Power Bipolar Transistors
Page 2
07/04/06 V1.0
Absolute Maximum Ratings
Description
Symbol
Value
Unit
Collector Emitter Voltage
V
CEO
40
V
Collector Base Voltage
V
CBO
60
Emitter Base Voltage
V
EBO
5
Collector Current Continuous
I
C
600
mA
Power Dissipation at T
a
= 25 °C
Derate Above 25 °C
P
D
600
3.43
mW
mW/ °C
Power Dissipation at T
C
= 25 °C
Derate Above 25 °C
3.0
17.2
W
mW/ °C
Operating and Storage Junction
Temperature Range
T
j
, T
stg
-65 to +200
°C
Electrical Characteristics (T
a
= 25 °C unless specified otherwise)
Description
Symbol
Test Condition
Minimum
Maximum
Unit
Collector Emitter Voltage
*V
CEO
I
C
= 10mA, I
B
= 0
40
-
V
Collector Base Voltage
V
CBO
I
C
= 10
µA, I
E
= 0
60
-
Emmiter Base Voltage
V
EBO
I
E
= 10
µA, I
C
= 0
5
-
Collector Cut off Current
I
CEX
V
CE
= 30V, V
BE
= 0.5V
-
50
nA
Collector Cut off Current
I
CBO
V
CB
= 50V, I
E
= 0
-
20
nA
V
CB
= 50V, I
E
= 0,
T
a
= 150 °C
-
µA
Base Current
I
B
V
CE
= 30V, V
BE
= 0.5V
-
50
nA
DC Current Gain
h
FE
I
C
= 0.1mA, V
CE
= 10V
I
C
= 1mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
*I
C
= 150mA, V
CE
= 10V
*I
C
= 500mA, V
CE
= 10V
-
>35
>50
>75
100 - 300
>30
-
Small Signal Characteristics
Collector Emitter Saturation Voltage
*V
CE (sat)
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
-
0.4
1.6
V
Base Emitter Saturation Voltage
*V
BE (sat)
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
-
1.3
2.6
Transition Frequency
**f
T
I
C
= 50mA, V
CE
= 20V
f = 100MHz
200
-
MHz
Output Capacitance
C
obo
V
CB
= 10V, I
E
= 0
f = 100KHz
-
8.0
pF
Input Capacitance
C
ibo
V
BE
= 2V, I
C
= 0
f = 100KHz
-
30
*Pulse Test: Pulse Width
≤300 µs, Duty Cycle ≤2%.
**f
T
is defined as the frequency at which /h
FE
/ extrapolates to unity.
2N2905
Low Power Bipolar Transistors
Page 3
07/04/06 V1.0
Electrical Characteristics (T
a
= 25 °C unless specified otherwise)
Description
Symbol
Test Condition
Minimum
Maximum
Unit
Switching Time
Delay Time
t
d
I
C
= 150mA, I
B1
= 15mA, V
CC
= 30V
-
10
nS
Rise Time
t
r
-
40
Turn on Time
t
on
-
45
Storage Time
t
S
I
C
= 150mA, I
B1
= I
B2
= 15mA,
V
CC
= 6V
-
80
Fall Time
t
f
-
30
Turn off Time
t
off
-
100
Package
Part Number
TO-39
2N2905
Part Number Table
For enquiries from all other markets
2N2905
Low Power Bipolar Transistors
Page 4
07/04/06 V1.0
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export
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