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©
Semiconductor Components Industries, LLC, 2005
December, 2005 - Rev. 6
1
Publication Order Number:
2N3055/D
2N3055(NPN), MJ2955(PNP)
Preferred Device
Complementary Silicon
Power Transistors
Complementary silicon power transistors are designed for
general-purpose switching and amplifier applications.
Features
•
DC Current Gain - h
FE
= 20 -70 @ I
C
= 4 Adc
•
Collector-Emitter Saturation Voltage -
V
CE(sat)
= 1.1 Vdc (Max) @ I
C
= 4 Adc
•
Excellent Safe Operating Area
•
Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
60
Vdc
Collector-Emitter Voltage
V
CER
70
Vdc
Collector-Base Voltage
V
CB
100
Vdc
Emitter-Base Voltage
V
EB
7
Vdc
Collector Current - Continuous
I
C
15
Adc
Base Current
I
B
7
Adc
Total Power Dissipation @ T
C
= 25
°
C
Derate Above 25
°
C
P
D
115
0.657
W
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
-
65 to +200
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
160
0
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE ( °C)
P
D, POWER DISSIP
ATION
(W
ATTS)
140
120
100
80
60
40
20
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 115 WATTS
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
2N3055
TO-204AA
100 Units / Tray
MJ2955G
TO-204AA
(Pb-Free)
TO-204AA (TO-3)
CASE 1-07
STYLE 1
100 Units / Tray
2N3055G
TO-204AA
(Pb-Free)
100 Units / Tray
MJ2955
TO-204AA
100 Units / Tray
MARKING DIAGRAM
xxxx55
= Device Code
xxxx = 2N30 or MJ20
G
= Pb-Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
xxxx55G
AYYWW
MEX
2N3055(NPN), MJ2955(PNP)
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
R
q
JC
1.52
_
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS*
Collector-Emitter Sustaining Voltage (I
C
= 200 mAdc, I
B
= 0)
V
CEO(sus)
60
-
Vdc
Collector-Emitter Sustaining Voltage (I
C
= 200 mAdc, R
BE
= 100
W
)
V
CER(sus)
70
-
Vdc
Collector Cutoff Current (V
CE
= 30 Vdc, I
B
= 0)
I
CEO
-
0.7
mAdc
Collector Cutoff Current
(V
CE
= 100 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 100 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150
°
C)
I
CEX
-
-
1.0
5.0
mAdc
Emitter Cutoff Current (V
BE
= 7.0 Vdc, I
C
= 0)
I
EBO
-
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
h
FE
20
5.0
70
-
-
Collector-Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 400 mAdc)
(I
C
= 10 Adc, I
B
= 3.3 Adc)
V
CE(sat)
-
1.1
3.0
Vdc
Base-Emitter On Voltage (I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
-
1.5
Vdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 40 Vdc, t = 1.0 s, Nonrepetitive)
I
s/b
2.87
-
Adc
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
f
T
2.5
-
MHz
*Small-Signal Current Gain (I
C
= 1.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 kHz)
h
fe
15
120
-
*Small-Signal Current Gain Cutoff Frequency (V
CE
= 4.0 Vdc, I
C
= 1.0 Adc, f = 1.0 kHz)
f
hfe
10
-
kHz
*Indicates Within JEDEC Registration. (2N3055)
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
20
6
Figure 2. Active Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
6
4
2
1
0.6
0.4
0.2
10
20
40
60
I C
, COLLECT
OR
CURRENT
(AMP)
dc
500 ms
1 ms
250 ms
50 ms
BONDING WIRE LIMIT
THERMALLY LIMITED @ T
C
= 25 °C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
- V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
is based on T
C
= 25
°C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated
2N3055(NPN), MJ2955(PNP)
http://onsemi.com
3
V CE
, COLLECT
OR-EMITTER
VOL
TAGE
(VOL
TS)
V CE
, COLLECT
OR-EMITTER
VOL
TAGE
(VOL
TS)
500
0.1
Figure 3. DC Current Gain, 2N3055 (NPN)
I
C
, COLLECTOR CURRENT (AMP)
5.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
10
100
50
30
20
200
70
h FE
, DC CURRENT
GAIN
T
J
= 150 °C
25 °C
-55 °C
V
CE
= 4.0 V
200
0.1
I
C
, COLLECTOR CURRENT (AMP)
10
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0
10
70
30
20
100
50
h FE
, DC CURRENT
GAIN
T
J
= 150 °C
25 °C
-55 °C
V
CE
= 4.0 V
7.0
10
300
7.0
7.0
Figure 4. DC Current Gain, MJ2955 (PNP)
2.0
5.0
I
B
, BASE CURRENT (mA)
0
10
20
50
100
200
500
1000 2000
5000
1.6
1.2
0.8
0.4
I
C
= 1.0 A
T
J
= 25 °C
4.0 A
8.0 A
2.0
I
B
, BASE CURRENT (mA)
0
1.6
1.2
0.8
0.4
1.4
0.1
I
C
, COLLECTOR CURRENT (AMPERES)
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0
10
1.0
0.6
0.4
0.2
0
T
J
= 25 °C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V,
VOL
TAGE
(VOL
TS)
Figure 5. Collector Saturation Region,
2N3055 (NPN)
1.2
0.8
7.0
V
BE
@ V
CE
= 4.0 V
2.0
0.1
I
C
, COLLECTOR CURRENT (AMP)
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
1.2
0.4
0
T
J
= 25 °C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V,
VOL
TAGE
(VOL
TS)
1.6
0.8
V
BE
@ V
CE
= 4.0 V
5.0
10
20
50
100
200
500
1000 2000
5000
I
C
= 1.0 A
T
J
= 25 °C
4.0 A
8.0 A
Figure 6. Collector Saturation Region,
MJ2955 (PNP)
Figure 7. †śOn†ť Voltages, 2N3055 (NPN)
Figure 8. †śOn†ť Voltages, MJ2955 (PNP)
2N3055(NPN), MJ2955(PNP)
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
---
1.050
---
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
---
0.830
---
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
-T-
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
-Q-
-Y-
2
1
U
L
G
B
V
H
TO-204 (TO-3)
CASE 1-07
ISSUE Z
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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2N3055/D
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