©2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

2N38

19

Epitaxial Silicon Transistor

Absolute Maximum Ratings* 

T

C

=25

°

C unless otherwise noted 

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics 

T

C

=25

°

C unless otherwise noted 

Thermal Characteristics 

T

A

=25

°

C unless otherwise noted

* Device mounted on FR-4 PCB 1.5†� 

×

 1.6†� 

×

 0.06†�

Symbol

Parameter

Ratings

Units

V

DG

Drain-Gate Voltage

25

V

V

GS

Gate-Source Voltage

-25

V

I

D

Drain Current

50

mA

I

GF

Forward Gate Current

10

mA

T

STG

Storage Temperature Range

-55 ~ 150

°

C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristics

V

(BR)GSS

Gate-Source Breakdwon Voltage

I

G 

= 1.0

µ

A, V

DS

 = 0

25

V

I

GSS

Gate Reverse Current

V

GS 

= -15V, V

DS 

= 0

2.0

nA

V

GS

(off)

Gate-Source Cutoff Voltage

V

DS 

= 15V, I

D 

= 2.0nA

8.0

V

V

GS

Gate-Source Voltage

V

DS 

= 15V, I

D 

= 200

µ

A

-0.5

-7.5

V

On Characteristics

I

DSS

Zero-Gate Voltage Drain Current

V

DS

 = 15V, V

GS

 = 0

2.0

20

mA

Small Signal Characteristics

gfs

Forward Transfer Conductance

V

DS

 = 15V, V

GS

 = 0, f = 1.0KHz

2000

6500

µ

mhos

goss

Output Conductance

V

DS

= 15V, V

GS

 = 0, f = 1.0KHz

50

µ

mhos

y

fs

                Forward Transfer Admittance

V

DS

= 15V, V

GS

 = 0, f = 1.0KHz

1600

µ

mhos

C

iss

Input Capacitance

V

DS

 = 15V, V

GS

 = 0, f = 1.0KHz

8.0

pF

C

rss

Reverse Transfer Capacitance

V

DS

 = 15V, V

GS

 = 0, f = 1.0KHz

4.0

pF

Symbol

Parameter

Max.

Units

P

D

Total Device Dissipation
Derate above 25

°

C

350

2.8

mW

mW/

°

C

R

Θ

JC

Thermal Resistance, Junction to Case

125

°

C/W

R

Θ

JA

Thermal Resistance, Junction to Ambient

357

°

C/W

2N3819

N-Channel RF Amplifier

• This device is designed for RF amplifier and mixer applications 

operating up to 450MHz, and for analog switching requiring low 
capacitance.

• Sourced from process 50.

TO-92

1. Drain  2. Gate   3. Source

1

0.46 

±

0.10

1.27TYP

(R2.29)

3.86MAX

[1.27 

±

0.20

]

1.27TYP

[1.27 

±

0.20

]

3.60 

±

0.20

14.47 

±

0.40

1.02 

±

0.10

(0.25)

4.58 

±

0.20

4.58

+0.25
-0.15

0.38

+0.10
-0.05

0.38

+0.10

-0.05

TO-92

Package Dimensions

2N38

19

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

©2002 Fairchild Semiconductor Corporation

Rev. I1

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In 
Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

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