| Secciones |
|---|
| Foros Electrónica |
|
|
| Boletines de correo |
 |
2N3904 / MMBT3904
/
PZT3904
— NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
October 2014
2N3904 / MMBT3904 / PZT3904
NPN General-Purpose Amplifier
Ordering Information
Part Number
Marking
Package
Packing Method
Pack Quantity
2N3904BU
2N3904
TO-92 3L
Bulk
10000
2N3904TA
2N3904
TO-92 3L
Ammo
2000
2N3904TAR
2N3904
TO-92 3L
Ammo
2000
2N3904TF
2N3904
TO-92 3L
Tape and Reel
2000
2N3904TFR
2N3904
TO-92 3L
Tape and Reel
2000
MMBT3904
1A
SOT-23 3L
Tape and Reel
3000
PZT3904
3904
SOT-223 4L
Tape and Reel
2500
2N3904
MMBT3904
PZT3904
E B C
TO-92
SOT-23
SOT-223
Mark:1A
C
B
E
E
B
C
C
Description
This device is designed as a general-purpose amplifier
and switch. The useful dynamic range extends to 100
mA as a switch and to 100 MHz as an amplifier.
2N3904 / MMBT3904
/
PZT3904
— NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
2
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25 °C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150
°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at T
A
= 25 °C unless otherwise noted.
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm, mounting pad for the collector lead minimum 6 cm
2
.
Symbol
Parameter
Value
Unit
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
200
mA
T
J,
T
STG
Operating and Storage Junction Temperature Range
-55 to 150
°C
Symbol
Parameter
Maximum
Unit
2N3904
MMBT3904
(3)
PZT3904
(4)
P
D
Total Device Dissipation
625
350
1,000
mW
Derate Above 25
°C
5.0
2.8
8.0
mW/
°C
R
ΘJC
Thermal Resistance, Junction to Case
83.3
°C/W
R
ΘJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
2N3904 / MMBT3904
/
PZT3904
— NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
3
Electrical Characteristics
Values are at T
A
= 25 °C unless otherwise noted.
Note:
5. Pulse test: pulse width
≤ 300 μs, duty cycle ≤ 2.0%.
Symbol
Parameter
Conditions
Min.
Max.
Unit
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
μA, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
μA, I
C
= 0
6.0
V
I
BL
Base Cut-Off Current
V
CE
= 30 V, V
EB
= 3 V
50
nA
I
CEX
Collector Cut-Off Current
V
CE
= 30 V, V
EB
= 3 V
50
nA
ON CHARACTERISTICS
(5)
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
40
I
C
= 1.0 mA, V
CE
= 1.0 V
70
I
C
= 10 mA, V
CE
= 1.0 V
100
300
I
C
= 50 mA, V
CE
= 1.0 V
60
I
C
=100 mA, V
CE
= 1.0V
30
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
0.2
V
I
C
= 50 mA, I
B
= 5.0 mA
0.3
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
0.65
0.85
V
I
C
= 50 mA, I
B
= 5.0 mA
0.95
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
300
MHz
C
obo
Output Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 100 kHz
4.0
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0,
f = 100 kHz
8.0
pF
NF
Noise Figure
I
C
= 100
μA, V
CE
= 5.0 V,
R
S
= 1.0 k
Ω,
f = 10 Hz to 15.7 kHz
5.0
dB
SWITCHING CHARACTERISTICS
t
d
Delay Time
V
CC
= 3.0 V, V
BE
= 0.5 V
I
C
= 10 mA, I
B1
= 1.0 mA
35
ns
t
r
Rise Time
35
ns
t
s
Storage Time
V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= I
B2
= 1.0 mA
200
ns
t
f
Fall Time
50
ns
2N3904 / MMBT3904
/
PZT3904
— NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
4
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
Figure 6. Capacitance vs. Reverse Bias Voltage
0.1
1
10
100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
TY
P
IC
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
IN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
0.1
1
10
100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V
- CO
LL
EC
T
O
R-
E
M
ITTE
R
VO
L
TA
G
E
(V
)
CESA
T
25 °C
C
β = 10
125 °C
- 40 °C
0.1
1
10
100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
ITT
ER VOL
T
A
G
E
(V
)
BESA
T
C
β = 10
25 °C
125 °C
- 40 °C
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
- B
A
SE-
EMI
TTER
ON
VOL
T
A
GE (
V
)
BE
(O
N)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
- C
O
LL
ECT
OR C
URR
ENT
(
n
A
)
A
V
= 30V
CB
CB
O
°
0.1
1
10
100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CA
P
A
CIT
A
NCE (p
F
)
C obo
C ibo
f = 1.0 MHz
2N3904 / MMBT3904
/
PZT3904
— NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
5
Typical Performance Characteristics
(Continued)
Figure 7. Noise Figure vs. Frequency
Figure 8. Noise Figure vs. Source Resistance
Figure 9. Current Gain and Phase Angle vs.
Frequency
Figure 10. Power Dissipation vs.
Ambient Temperature
Figure 11. Turn-On Time vs. Collector Current
Figure 12. Rise Time vs. Collector Current
0.1
1
10
100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
N
F
- NOI
S
E
FI
G
URE (
d
B)
V = 5.0V
CE
I = 100 μA, R = 500 Ω
C
S
I = 1.0 mA
R = 200Ω
C
S
I = 50 μA
R = 1.0 kΩ
C
S
I = 0.5 mA
R = 200Ω
C
S
k
Ω
Ω
0.1
1
10
100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
N
F
-
NO
IS
E
F
IG
U
RE
(
d
B)
I = 100
μA
C
I = 1.0 mA
C
S
I = 50
μA
C
I = 5.0 mA
C
ΘΘ
-
DEGR
EES
0
40
60
80
100
120
140
160
20
180
1
10
100
1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h
-
CURRE
NT GA
IN
(
d
B)
Θ
V = 40V
CE
I = 10 mA
C
h
fe
fe
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
- PO
W
E
R DI
SSI
P
A
TIO
N
(W
)
D
o
SOT-223
SOT-23
TO-92
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
S)
I = I =
B1
C
B2
I
c
10
40V
15V
2.0V
t
@
V = 0V
CB
d
t
@
V = 3.0V
CC
r
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
R
IS
E
T
IM
E
(
n
s
)
I = I =
B1
C
B2
I
c
10
T = 125 °C
T = 25 °C
J
V = 40V
CC
r
J
2N3904 / MMBT3904
/
PZT3904
— NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
6
Typical Performance Characteristics
(Continued)
Figure 13. Storage Time vs. Collector Current
Figure 14. Fall Time vs. Collector Current
Figure 15. Current Gain
Figure 16. Output Admittance
Figure 17. Input Impedance
Figure 18. Voltage Feedback Ratio
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
S
T
O
R
A
G
E
T
IM
E
(n
s
)
I = I =
B1
C
B2
I
c
10
S
T = 125 °C
T = 25 °C
J
J
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
F
A
L
L
T
IM
E
(n
s
)
I = I =
B1
C
B2
I
c
10
V = 40V
CC
f
T = 125 °C
T = 25 °C
J
J
0.1
1
10
10
100
500
I - COLLECTOR CURRENT (mA)
h
- CUR
R
E
NT
GA
IN
V = 10 V
CE
C
fe
f = 1.0 kHz
T = 25 C
A
o
0.1
1
10
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
O
U
TPU
T A
D
M
IT
T
A
N
C
E
(
m
h
os
)
V = 10 V
CE
C
oe
f = 1.0 kHz
T = 25 C
A
o
μ
0.1
1
10
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
IN
PU
T
I
M
PED
AN
C
E
(
k
)
V = 10 V
CE
C
ie
f = 1.0 kHz
T = 25 C
A
o
Ω
0.1
1
10
1
2
3
4
5
7
10
I - COLLECTOR CURRENT (mA)
h
-
V
O
LTA
G
E
F
E
E
D
B
A
C
K
R
A
T
IO
(
x
1
0
)
V = 10 V
CE
C
re
f = 1.0 kHz
T = 25 C
A
o
_
4
2N3904 / MMBT3904
/
PZT3904
— NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
7
Test Circuits
10 K
Ω
Ω
Ω
Ω
Ω
3.0 V
275
Ω
Ω
Ω
Ω
Ω
t
1
C
1
<<<<< 4.0 pF
Duty Cycle
===== 2%
Duty Cycle
===== 2%
<<<<< 1.0 ns
- 0.5 V
300 ns
10.6 V
10
<
<
<
<
< t
1
<<<<< 500 μμμμμs
10.9 V
- 9.1 V
<<<<< 1.0 ns
0
0
10 K
Ω
Ω
Ω
Ω
Ω
3.0 V
275
Ω
Ω
Ω
Ω
Ω
C
1
<<<<< 4.0 pF
1N916
Figure 19. Delay and Rise Time Equivalent Test Circuit
Figure 20. Storage and Fall Time Equivalent Test Circuit
DETAIL A
SCALE: 2:1
3.10
2.90
6.70
6.20
3.70
3.30
0.84
0.60
2.30
4.60
1.80 MAX
6.10
2.30
LAND PATTERN RECOMMENDATION
0.95
1.90
1.90
3.25
7.30
6.70
GAGE
PLANE
0.60 MIN
SEE DETAIL A
C
0.08
C
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
SEATING
PLANE
10 °
0 °
TYP
B
A
0.10
C B
0.10
C B
4
3
1
0.10
0.00
0.25
R0.15 ±0.05
R0.15 ±0.05
1.70
10 °
5 °
10 °
5 °
0.35
0.20
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower

AttitudeEngine™
Awinda
®
AX-CAP
®
*
BitSiC

Build it Now

CorePLUS

CorePOWER

CROSSVOLT

CTL

Current Transfer Logic

DEUXPEED
®
Dual Cool™
EcoSPARK
®
EfficientMax

ESBC

Fairchild
®
Fairchild Semiconductor
®
FACT Quiet Series

FACT
®
FastvCore

FETBench

FPS

F-PFS

FRFET
®
Global Power Resource
SM
GreenBridge

Green FPS

Green FPS
 e-Series
Gmax

GTO

IntelliMAX

ISOPLANAR

Making Small Speakers Sound Louder
and Better™
MegaBuck

MICROCOUPLER

MicroFET

MicroPak

MicroPak2

MillerDrive

MotionMax

MotionGrid
®
MTi
®
MTx
®
MVN
®
mWSaver
®
OptoHiT

OPTOLOGIC
®
OPTOPLANAR
®
®
Power Supply WebDesigner

PowerTrench
®
PowerXS™
Programmable Active Droop

QFET
®
QS

Quiet Series

RapidConfigure


Saving our world, 1mW/W/kW at a time™
SignalWise

SmartMax

SMART START

Solutions for Your Success

SPM
®
STEALTH

SuperFET
®
SuperSOT
-3
SuperSOT
-6
SuperSOT
-8
SupreMOS
®
SyncFET

Sync-Lock™
®*
TinyBoost
®
TinyBuck
®
TinyCalc

TinyLogic
®
TINYOPTO

TinyPower

TinyPWM

TinyWire

TranSiC

TriFault Detect

TRUECURRENT
®
*
µSerDes
UHC
®
Ultra FRFET

UniFET

VCX

VisualMax

VoltagePlus

XS™
Xsens™
仙童
®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. T
O OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR
WEBSITE AT
HTTP://WWW.FAIRCHILDSEMI.COM.
FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
AUTHORIZED USE
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary
levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive
or other transportation, (2) military/aerospace, (3) any safety critical application - including life critical medical equipment - where the failure of the Fairchild product
reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject to agreement of this Authorized Use
policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be
subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Terms of Use
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Preliminary First
Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I77
®
