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2
N
4403 / MMBT4403 — PNP Ge
neral-Purpose Amplifier
© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N4403 / MMBT4403 Rev. 1.1.1
July 2014
2N4403 / MMBT4403
PNP General-Purpose Amplifier
Ordering Information
Figure 1. 2N4403 Device Package
Figure 2. MMBT4403 Device Package
Part Number
Marking
Package
Packing Method
2N4403BU
2N4403
TO-92 3L
Bulk
2N4403TF
2N4403
TO-92 3L
Tape and Reel
2N4403TFR
2N4403
TO-92 3L
Tape and Reel
2N4403TA
2N4403
TO-92 3L
Ammo
2N4403TAR
2N4403
TO-92 3L
Ammo
MMBT4403
2T
SOT-23 3L
Tape and Reel
E B C
TO-92
SOT-23
Mark:2T
C
B
E
Description
This device is designed for use as a general-purpose
amplifier and switch for collector currents to 500 mA.
2
N
4403 / MMBT4403 — PNP Ge
neral-Purpose Amplifier
© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N4403 / MMBT4403 Rev. 1.1.1
2
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25 °C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150
°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at T
A
= 25 °C unless otherwise noted.
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
Symbol
Parameter
Value
Unit
V
CEO
Collector-Emitter Voltage
-40
V
V
CBO
Collector-Base Voltage
-40
V
V
EBO
Emitter-Base Voltage
-5.0
V
I
C
Collector Current - Continuous
-600
mA
T
J,
T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Parameter
Max.
Unit
2N4403
(3)
MMBT4403
(4)
P
D
Total Device Dissipation
625
350
mW
Derate Above 25
°C
5.0
2.8
mW/
°C
R
ΘJC
Thermal Resistance, Junction to Case
83.3
°C/W
R
ΘJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
2
N
4403 / MMBT4403 — PNP Ge
neral-Purpose Amplifier
© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N4403 / MMBT4403 Rev. 1.1.1
3
Electrical Characteristics
Values are at T
A
= 25 °C unless otherwise noted.
Note:
5. Pulse test: pulse width
≤ 300 μs, duty cycle ≤ 2.0%.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
(5)
I
C
= -1.0 mA, I
B
= 0
-40
V
V
(BR)CBO
Collector-Base Breakdown
Voltage
I
C
= -0.1 mA, I
E
= 0
-40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -0.1 mA, I
C
= 0
-5.0
V
I
BL
Base Cut-Off Current
V
CE
= -35 V, V
EB
= -0.4 V
-0.1
μA
I
CEX
Collector Cut-Off Current
V
CE
= -35 V, V
EB
= -0.4 V
-0.1
μA
On Characteristics
h
FE
DC Current Gain
I
C
= -0.1 mA, V
CE
= -1.0 V
30
I
C
= -1.0 mA, V
CE
= -1.0 V
60
I
C
= -10 mA, V
CE
= -1.0 V
100
I
C
= -150 mA, V
CE
= -2.0 V
(5)
100
300
I
C
= -500 mA, V
CE
= -2.0 V
(5)
20
V
CE
(sat)
Collector-Emitter Saturation
Voltage
(5)
I
C
= -150 mA, I
B
= -15 mA
-0.40
V
I
C
= -500 mA, I
B
= -50 mA
-0.75
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -150 mA, I
B
= -15 mA
(5)
-0.75
-0.95
V
I
C
= -500 mA, I
B
= -50 mA
-1.30
Small Signal Characteristics
f
T
Current Gain - Bandwidth Product
I
C
= -20 mA, V
CE
= -10 V,
f = 100 MHz
200
MHz
C
cb
Collector-Base Capacitance
V
CB
= -10 V, I
E
= 0,
f = 140 kHz
8.5
pF
C
eb
Emitter-Base Capacitance
V
BE
= -0.5 V, I
C
= 0,
f = 140 kHz
30
pF
h
ie
Input Impedance
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
1.5
15.0
k
Ω
h
re
Voltage Feedback Ratio
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
0.1
8.0
x10
-4
h
fe
Small-Signal Current Gain
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
60
500
h
oe
Output Admittance
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
1
100
μmhos
Switching Characteristics
t
d
Delay Time
V
CC
= -30 V, I
C
= -150 mA,
I
B1
= -15 mA
15
ns
t
r
Rise Time
20
ns
t
s
Storage Time
V
CC
= -30 V, I
C
= -150 mA,
I
B1
= I
B2
= -15 mA
225
ns
t
f
Fall Time
30
ns
2
N
4403 / MMBT4403 — PNP Ge
neral-Purpose Amplifier
© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N4403 / MMBT4403 Rev. 1.1.1
4
Typical Performance Characteristics
Figure 3. Typical Pulsed Current Gain vs.
Collector Current
Figure 4. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 6. Base-Emitter On Voltage vs.
Collector Current
Figure 7. Collector Cut-Off Current vs.
Ambient Temperature
Figure 8. Input and Output Capacitance vs.
Reverse Bias Voltage
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
YPI
CA
L
PU
LSED C
URR
ENT
G
A
IN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
1
10
100
500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRE NT (mA)
V
-
C
O
LL
E
C
TO
R
E
M
IT
T
E
R
V
O
LT
A
G
E
(
V
)
C
CE
S
A
T
β = 10
25 °C
- 40 °C
125 °C
1
10
100
500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
E
M
IT
T
E
R
V
O
L
TA
G
E
(
V
)
C
BE
S
A
T
25 °C
- 40 °C
125 °C
β = 10
0.1
1
10
25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
E
M
IT
T
E
R
O
N
V
O
L
TA
G
E
(
V
)
C
BE
(O
N)
V = 5V
CE
25 °C
- 40 °C
125 °C
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
L
LE
C
T
O
R
C
U
R
R
E
N
T
(
n
A
)
A
CBO
°
V = 35V
CB
0.1
1
10
50
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
C
A
P
A
CI
TA
NC
E
(
p
F
)
C ob
C
ib
2
N
4403 / MMBT4403 — PNP Ge
neral-Purpose Amplifier
© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N4403 / MMBT4403 Rev. 1.1.1
5
Typical Performance Characteristics
(Continued)
Figure 9. Switching Times vs. Collector Current
Figure 10. Turn-On and Turn-Off Times vs.
Collector Current
Figure 11. Rise Time vs.
Collector and Turn-On Base Currents
Figure 12. Power Dissipation vs.
Ambient Temperature
Figure 13. Common Emitter Characteristics
Figure 14. Common Emitter Characteristics
10
100
1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
TI
M
E
(n
S
)
I = I =
t r
t
s
B1
C
B2
I
c
10
V = 15 V
cc
t f
t d
10
100
1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(n
S
)
I = I =
t on
t
off
B1
C
B2
I
c
10
V = 15 V
cc
10
100
500
1
2
5
10
20
50
I - COLLECTOR CURRENT (mA)
I
-
TU
RN 0
N
BA
S
E
CU
RR
ENT
(
m
A
)
30 ns
C
t = 15 V
r
B1
60 ns
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R D
ISS
IP
A
T
IO
N (
W
)
D
o
SOT-223
TO-92
SOT-23
1
2
5
10
20
50
0.1
0.2
0.5
1
2
5
I - COLLECTOR CURRENT (mA)
CH
AR
. RE
L
A
T
IVE
T
O
V
A
L
U
E
S
AT I
=
-
1
0
m
A
V = -10 V
CE
C
C
T = 25 C
A
o
h
oe
h
re
h
fe
h
ie
_ _
_ _ _
_
-20
-16
-12
-8
-4
0.8
0.9
1
1.1
1.2
1.3
V - COLLECTOR VOLTAGE (V)
C
H
AR
.
REL
A
T
IV
E
T
O
V
A
L
U
ES
A
T
V
=
-
1
0
V
I = -10mA
C
CE
CE
T = 25 C
A
o
h
oe
h and h
re
h
fe
h
ie
oe
h
fe
h
ie
h
re
2
N
4403 / MMBT4403 — PNP Ge
neral-Purpose Amplifier
© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N4403 / MMBT4403 Rev. 1.1.1
6
Typical Performance Characteristics
(Continued)
Figure 15. Common Emitter Characteristics
-40
-20
0
20
40
60
80
100
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - AMBIENT TEMPERATURE ( C)
C
H
A
R
. R
E
LA
TI
V
E
TO
V
A
LU
ES
A
T
T
=
25
C
V = -10 V
CE
A
A
h
oe
h
re
h
fe
h
ie
o
o
I = -10mA
C
h
fe
h
ie
h
re
h
oe
2
N
4403 / MMBT4403 — PNP Ge
neral-Purpose Amplifier
© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N4403 / MMBT4403 Rev. 1.1.1
7
Physical Dimensions
Figure 16. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf
.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf
.
TO-92 3L (Tape and Reel, Ammo)
2
N
4403 / MMBT4403 — PNP Ge
neral-Purpose Amplifier
© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N4403 / MMBT4403 Rev. 1.1.1
8
Physical Dimensions
(Continued)
Figure 17. 3-LEAD, JEDEC TO-92 COMPLIANT STRAGHIT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf
.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf
.
D
TO-92 3L (Bulk)
2
N
4403 / MMBT4403 — PNP Ge
neral-Purpose Amplifier
© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N4403 / MMBT4403 Rev. 1.1.1
9
Physical Dimensions
(Continued)
Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf
.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf
.
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
1
2
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10
C
2.40 ±0.30
2.92 ±0.20
1.30+0.20
-0.15
0.60
0.37
0.20
A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
SOT-23 3L
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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intended to be an exhaustive list of all such trademarks.
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AX-CAP
®
*
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®
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®
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®
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®
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¥
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®
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®
SuperSOT ¥-3
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®
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®*
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®
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®
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௕º
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accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Preliminary First
Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Obsolete
Not In Production
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The datasheet is for reference information only.
Rev. I68
®
