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Page <1>
V1.0
10/09/12
Unijunction Transistor
Description:
A PN unijunction transistor in a TO-92 type package designed for use in pulse
and timing circuits, sensing circuits and thyristor trigger circuits
Absolute maximum Ratings :
(Ta = +25 C unless otherwise specified)
Power Dissipation, P
d
: 300mW
Derate Above 25 C
: 3.0mW/ C
RMS Emitter Current, I
e
(
rms
)
: 50mA
Peak Pulse Emitter Current (Note 1) Current, i
e
: 1.5A
Emitter Reverse Voltage, V
b
2
e
: 30V
Interbase Voltage, V
b
2
b
1
: 35V
Operating Junction Temperature Range, T
j
: -65 C to +125 C
Storage Temperature Range, Tstg
: -65 C to +150 C
Notes:
1. Duty Cycle <= 1% PRR = 10PPS.
2. Based upon power dissipation at Ta = +25 C
3. Intrinsic standoff ratio is essentially constant with temperature and interbase voltage and is defined by the
equation:
Vp - Vbb + Vd
Where: Vp = Peak Point Emitter Voltage; Vbb = interbase Voltage;
Vd = Junction Diode Drop (~0.5V).
5. Use Pulse techniques: Pulse width ~ 300 S, Duty Cycle <= 2% to avoid internal heating due to inter-
base modulation which may result in erroneous readings
Electrical Characteristics: (T
a
= +25 C Unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Instrinsic Standoff Ratio
V
b
2
b
1
= 10V, Note3
0.56
-
0.75
-
Interbase Resistance
r
bb
4
6
9.1
kΩ
Interbase Resistance Temperature
Coefficient
0.1
-
0.9
%/ C
Emitter Saturation Voltage
V
eb
1(sat)
V
b
2
b
1
= 10V, I
e
= 50mA, Note 4
-
2.5
-
V
Modulated interbase Current
I
b
2(mod)
V
b
2
b
1
= 10V, I
e
= 50mA
-
15
-
mA
Emitter Reverse Current
I
eb
20
V
b
2
e
= 30V, I
b
1
= 0
-
0.005
1
A
Peak Point Emitter Current
I
p
V
b
2
b
1
= 25V
-
1
5
A
Valley Point Current
I
v
V
b
2
b
1
= 20V, R
b
2
= 100Ω, Note 4
2
5
-
mA
Base-One Peak Pulse Voltage
V
O
b
1
3
6
-
V
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Page <2>
V1.0
10/09/12
Unijunction Transistor
Important Notice : This data sheet and its contents (the Information) belong to the members of the Premier Farnell group of companies (the Group) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Groups liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. Premier Farnell plc 2012.
Part Number Table
Description
Part Number
Unijunction Transistor, TO-92, PN
2N4870
Dim
Min
Max
A
4.3
5.33
B
4.45
5.2
C
3.18
4.19
D
0.41
0.55
E
0.35
0.5
F
5
G
1.14
1.4
H
1.14
1.53
K
12.7
-
Dimensions : Millimetres
EN - For pricing and availability in your local country please visit one of the below links:
DE - Informationen zu Preisen und Verfügbarkeit in Ihrem Land erhalten Sie über die unten aufgeführten Links:
FR - Pour connaître les tarifs et la disponibilité dans votre pays, cliquez sur l'un des liens suivants:
EN
This Datasheet is presented by
the manufacturer
DE
Dieses Datenblatt wird vom
Hersteller bereitgestellt
FR
Cette fiche technique est
présentée par le fabricant