©

 Semiconductor Components Industries, LLC, 2006

March, 2006 - Rev. 5

1

Publication Order Number:

2N5460/D

2N5460, 2N5461, 2N5462

JFET Amplifier

P-Channel - Depletion

Features

•

Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain - Gate Voltage

V

DG

40

Vdc

Reverse Gate  -  Source Voltage

V

GSR

40

Vdc

Forward Gate Current

I

G(f)

10

mAdc

Total Device Dissipation @ T

A

 = 25

°

C

Derate above 25

°

C

P

D

350

2.8

mW

mW/

°

C

Junction Temperature Range

T

J

- 65 to +135

°

C

Storage Channel Temperature Range

T

stg

- 65 to +150

°

C

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

MARKING DIAGRAM

TO-92

CASE 29

STYLE 7

1 2

3

Preferred devices are recommended choices for future use
and best overall value.

See detailed ordering and shipping information in the package
dimensions section on 

ORDERING INFORMATION

http://onsemi.com

2 DRAIN

1 SOURCE

3

GATE

2N

546x

AYWW

G

G

2N546x = Device Code

x = 0, 1, or 2

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb-Free Package

(Note: Microdot may be in either location)

2N5460, 2N5461, 2N5462

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS 

(T

A

 = 25

°

C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate - Source Breakdown Voltage

(I

G

 = 10 

m

Adc, V

DS

 = 0)

2N5460, 2N5461, 2N5462

V

(BR)GSS

40

-

-

Vdc

Gate Reverse Current

(V

GS

 = 20 Vdc, V

DS

 = 0)

2N5460, 2N5461, 2N5462

(V

GS

 = 30 Vdc, V

DS

 = 0)

(V

GS

 = 20 Vdc, V

DS

 = 0, T

A

 = 100

°

C)

2N5460, 2N5461, 2N5462

(V

GS

 = 30 Vdc, V

DS

 = 0, T

A

 = 100

°

C)

I

GSS

-

-

-

-

5.0

1.0

nAdc

m

Adc

Gate - Source Cutoff Voltage

2N5460

(V

DS

 = 15 Vdc, I

D

 = 1.0 

m

Adc)

2N5461
2N5462

V

GS(off)

0.75

1.0
1.8

-
-
-

6.0
7.5
9.0

Vdc

Gate - Source Voltage

(V

DS

 = 15 Vdc, I

D

 = 0.1 mAdc)

2N5460

(V

DS

 = 15 Vdc, I

D

 = 0.2 mAdc)

2N5461

(V

DS

 = 15 Vdc, I

D

 = 0.4 mAdc)

2N5462

V

GS

0.5
0.8
1.5

-
-
-

4.0
4.5
6.0

Vdc

ON CHARACTERISTICS

Zero - Gate -Voltage Drain Current

2N5460

(V

DS

 = 15 Vdc, V

GS

 = 0, f = 1.0 kHz)

2N5461
2N5462

I

DSS

- 1.0
- 2.0
- 4.0

-
-
-

- 5.0
- 9.0

- 16

mAdc

SMALL-SIGNAL CHARACTERISTICS

Forward Transfer Admittance

2N5460

(V

DS

 = 15 Vdc, V

GS

 = 0, f = 1.0 kHz)

2N5461
2N5462

•Žª

y

fs

•Žª

1000
1500
2000

-
-
-

4000
5000
6000

m

mhos

Output Admittance (V

DS

 = 15 Vdc, V

GS

 = 0, f = 1.0 kHz)

•Žª

y

os

•Žª

-

-

75

m

mhos

Input Capacitance (V

DS

 = 15 Vdc, V

GS

 = 0, f = 1.0 MHz)

C

iss

-

5.0

7.0

pF

Reverse Transfer Capacitance (V

DS

 = 15 Vdc, V

GS

 = 0, f = 1.0 MHz)

C

rss

-

1.0

2.0

pF

FUNCTIONAL CHARACTERISTICS

Equivalent Short-Circuit Input Noise Voltage

(V

DS

 = 15 Vdc, V

GS

 = 0, f = 100 Hz, BW = 1.0 Hz)

e

n

-

60

115

nV

Å„

Hz

Ǹ

ORDERING INFORMATION

Device

Package

Shipping

† 

2N5460

TO-92

1000 Units / Box

2N5460G

TO-92

(Pb-Free)

2N5461

TO-92

2N5461G

TO-92

(Pb-Free)

2N5461RLRA

TO-92

2000 / Tape & Reel

2N5461RLRAG

TO-92

(Pb-Free)

2N5462

TO-92

1000 Units / Box

2N5462G

TO-92

(Pb-Free)

† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

2N5460, 2N5461, 2N5462

http://onsemi.com

3

Y fs

 FOR

W

ARD 

TRANSFER 

ADMITT

ANCE (

mhos)
m

Y fs

 FOR

W

ARD 

TRANSFER 

ADMITT

ANCE (

mhos)
m

DRAIN CURRENT versus GATE

SOURCE VOLTAGE

FORWARD TRANSFER ADMITTANCE

versus DRAIN CURRENT

I D

, DRAIN CURRENT

 (mA)

Y fs

 FOR

W

ARD 

TRANSFER 

ADMITT

ANCE (

mhos)
m

4.0

4000

0

0.2

V

GS

, GATE-SOURCE VOLTAGE (VOLTS)

Figure 1. V

GS(off)

 = 2.0 V

1.0

I

D

, DRAIN CURRENT (mA)

3.5

I D

, DRAIN CURRENT

 (mA)

10

10000

0

1.0

V

GS

, GATE-SOURCE VOLTAGE (VOLTS)

Figure 2. V

GS(off)

 = 4.0 V

I

D

, DRAIN CURRENT (mA)

I D

, DRAIN CURRENT

 (mA)

16

10000

0

V

GS

, GATE-SOURCE VOLTAGE (VOLTS)

Figure 3. V

GS(off)

 = 5.0 V

I

D

, DRAIN CURRENT (mA)

Figure 4. V

GS(off)

 = 2.0 V

Figure 5. V

GS(off)

 = 4.0 V

Figure 6. V

GS(off)

 = 5.0 V

3.0

2.5

2.0

1.5

1.0

0.5

0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

V

DS

 = 15 V

200

300

500

700

1000

2000

3000

0.2

0.3

0.5

0.7

2.0

3.0

4.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0

0.5

1.5

2.0

2.5

3.0

3.5

4.0

500

700

1000

2000

3000

5000

7000

0.5

0.7

1.0

2.0

3.0

5.0

7.0

14

12

10

8.0

6.0

4.0

2.0

0

1.0

2.0

3.0

8.0

4.0

5.0

6.0

7.0

500

700

1000

2000

3000

5000

7000

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

T

A

 = -55 °C

25 °C

125 °C

V

DS

 = 15 V

f = 1.0 kHz

V

DS

 = 15 V

T

A

 = -55 °C

25 °C

125 °C

V

DS

 = 15 V

T

A

 = -55 °C

25 °C

125 °C

V

DS

 = 15 V

f = 1.0 kHz

V

DS

 = 15 V

f = 1.0 kHz

2N5460, 2N5461, 2N5462

http://onsemi.com

4

1000

0.1

0.2

I

D

, DRAIN CURRENT (mA)

Figure 7. Output Resistance

versus Drain Current

10

0.5

1.0

2.0

5.0

10

r oss

, OUTPUT

 RESIST

ANCE (k ohms)

C, CAP

ACIT

ANCE (pF)

10

0

V

DS

, DRAIN-SOURCE VOLTAGE (VOLTS)

Figure 8. Capacitance versus

Drain-Source Voltage

0

NF

, NOISE FIGURE (dB)

10

R

S

, SOURCE RESISTANCE (k Ohms)

Figure 9. Noise Figure versus

Source Resistance

0

Figure 10. Equivalent Low Frequency Circuit

20

30

50

70

100

200

300

500

700

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10

20

30

40

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

1.0

10

100

1000

10,000

NOTE:

1. Graphical data is presented for dc conditions. Tabular

data is given for pulsed conditions (Pulse Width = 630 ms,
Duty Cycle = 10%).

*C

osp

 is C

oss

 in parallel with Series Combination of C

iss

 and C

rss

.

v

i

C

rss

C

iss

r

oss

C

oss

| y

fs

 | v

i

COMMON SOURCE

y PARAMETERS FOR FREQUENCIES

BELOW 30 MHz

y

is

 = jW C

iss

y

os

 = jW C

osp

 * + 1/r

oss

y

fs

 = y

fs

 |

y

rs

 = -jW C

rss

V

DS

 = 15 V

f = 1.0 kHz

I

DSS

 = 3.0 mA

6.0 mA

10 mA

f = 1.0 MHz
V

GS

 = 0

C

iss

C

oss

C

rss

V

DS

 = 15 V

V

GS

 = 0

f = 100 Hz

2N5460, 2N5461, 2N5462

http://onsemi.com

5

PACKAGE DIMENSIONS

STYLE 7:

PIN 1. SOURCE

2. DRAIN
3. GATE

TO-92

CASE 29-11

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

R

A

P

J

L

B

K

G

H

SECTION X-X

C

V

D

N

N

X X

SEATING

PLANE

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

A

0.175

0.205

4.45

5.20

B

0.170

0.210

4.32

5.33

C

0.125

0.165

3.18

4.19

D

0.016

0.021

0.407

0.533

G

0.045

0.055

1.15

1.39

H

0.095

0.105

2.42

2.66

J

0.015

0.020

0.39

0.50

K

0.500

---

12.70

---

L

0.250

---

6.35

---

N

0.080

0.105

2.04

2.66

P

---

0.100

---

2.54

R

0.115

---

2.93

---

V

0.135

---

3.43

---

1

ON Semiconductor and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice
to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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2N5460/D

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