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Semiconductor Components Industries, LLC, 2001
February, 2001 - Rev. 1
1
Publication Order Number:
BC212/D
BC212, BC212B, BC213,
BC214
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC212
BC213
BC214
V
CEO
-50
-30
-30
Vdc
Collector-Base Voltage
BC212
BC213
BC214
V
CBO
-60
-45
-45
Vdc
Emitter-Base Voltage
V
EBO
-5.0
Vdc
Collector Current - Continuous
I
C
-100
mAdc
Total Device Dissipation
@ T
A
= 25
C
Derate above 25
C
P
D
350
2.8
mW
mW/
C
Total Device Dissipation
@ T
C
= 25
C
Derate above 25
C
P
D
1.0
8.0
Watts
mW/
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
-55 to
+150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
R
Θ
JA
357
C/W
Thermal Resistance,
Junction to Case
R
Θ
JC
125
C/W
Device
Package
Shipping
ORDERING INFORMATION
BC212
TO-92
http://onsemi.com
TO-92
CASE 29
STYLE 17
5000 Units/Box
3
2
1
BC212B
TO-92
5000 Units/Box
BC212BRL1
TO-92
2000/Tape & Reel
BC212BZL1
TO-92
2000/Ammo Pack
BC213
TO-92
5000 Units/Box
BC214
TO-92
5000 Units/Box
BC214RL1
TO-92
2000/Tape & Reel
COLLECTOR
1
2
BASE
3
EMITTER
BC21xx = Specific Device Code
xx
= 2, 2B, 3 or 4
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
BC2
1xx
YWW
BC212, BC212B, BC213, BC214
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
BC212
(I
C
= -2.0 mAdc, I
B
= 0)
BC213
BC214
V
(BR)CEO
-50
-30
-30
-
-
-
-
-
-
Vdc
Collector-Base Breakdown Voltage
BC212
(I
C
= -10
A, I
E
= 0)
BC213
BC214
V
(BR)CBO
-60
-45
-45
-
-
-
-
-
-
Vdc
Emitter-Base Breakdown Voltage
BC212
(I
E
= -10
Adc, I
C
= 0)
BC213
BC214
V
(BR)EBO
-5
-5
-5
-
-
-
-
-
-
Vdc
Collector-Emitter Leakage Current
BC212
(V
CB
= -30 V)
BC213
BC214
I
CBO
-
-
-
-
-
-
-15
-15
-15
nAdc
Emitter-Base Leakage Current
BC212
(V
EB
= -4.0 V, I
C
= 0)
BC213
BC214
I
EBO
-
-
-
-
-
-
-15
-15
-15
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= -10
Adc, V
CE
= -5.0 Vdc)
BC212
BC213
BC214
(I
C
= -2.0 mAdc, V
CE
= -5.0 Vdc)
BC212
BC213
BC214
(I
C
= -100 mAdc, V
CE
= -5.0 Vdc) (Note 1.)
BC212, BC214
BC213
h
FE
40
40
100
60
80
140
-
-
-
-
-
-
-
-
120
140
-
-
-
-
-
600
-
-
-
Collector-Emitter Saturation Voltage
(I
C
= -10 mAdc, I
B
= -0.5 mAdc)
(I
C
= -100 mAdc, I
B
= -5.0 mAdc) (Note 1.)
V
CE(sat)
-
-
-0.10
-0.25
-
-0.6
Vdc
Base-Emitter Saturation Voltage
(I
C
= -100 mAdc, I
B
= -5.0 mAdc)
V
BE(sat)
-
-1.0
-1.4
Vdc
Base-Emitter On Voltage
(I
C
= -2.0 mAdc, V
CE
= -5.0 Vdc)
V
BE(on)
-0.6
-0.62
-0.72
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(I
C
= -10 mAdc, V
CE
= -5.0 Vdc, f = 100 MHz)
BC212
BC214
BC213
f
T
-
-
-
280
320
360
-
-
-
MHz
Common-Base Output Capacitance
(V
CB
= -10 Vdc, I
C
= 0, f = 1.0 MHz)
C
ob
-
-
6.0
pF
Noise Figure
(I
C
= -0.2 mAdc, V
CE
= -5.0 Vdc,
R
S
= 2.0 k
Ω
, f = 1.0 kHz)
BC214
(I
C
= -0.2 mAdc, V
CE
= -5.0 Vdc,
R
S
= 2.0 k
Ω
, f = 1.0 kHz, f = 200 Hz)
BC212, BC213
NF
-
-
-
-
2
10
dB
Small-Signal Current Gain
(I
C
= -2.0 mAdc, V
CE
= -5.0 Vdc, f = 1.0 kHz)
BC212
BC213
BC214
BC212B
h
fe
60
80
140
200
-
-
-
-
-
-
-
400
-
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
BC212, BC212B, BC213, BC214
http://onsemi.com
3
2.0
1.5
1.0
0.2
0.3
0.5
0.7
-200
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
h FE
, NORMALIZED DC CURRENT
GAIN
V
CE
= -10 V
T
A
= 25
C
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
-0.1
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. Saturation and On Voltages
V,
VOL
TAGE (VOL
TS)
T
A
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
V
CE(sat)
@ I
C
/I
B
= 10
400
20
30
40
60
80
100
200
300
I
C
, COLLECTOR CURRENT (mAdc)
Figure 3. Current-Gain Bandwidth Product
f T
, CURRENT-GAIN BANDWIDTH PRODUCT
(MHz)
C, CAP
ACIT
ANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
-0.4
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
T
A
= 25
C
C
ib
C
ob
r b
, BASE SPREADING RESIST
ANCE (OHMS)
150
140
130
120
110
100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
-0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100
V
CE
= -10 V
T
A
= 25
C
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-50
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
1.0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
V
CE
= -10 V
f = 1.0 kHz
T
A
= 25
C
-0.1
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
V
CE
= -10 V
f = 1.0 kHz
T
A
= 25
C
-0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
0.01
0.03
0.05
0.1
0.3
0.5
h , OUTPUT
ADMITT
ANCE (OHMS)
ob
150
BC212, BC212B, BC213, BC214
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4
PACKAGE DIMENSIONS
TO-92 (TO-226)
CASE 29-11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X-X
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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