BC337 / BC338 — 

NPN 

Epit

axial Silicon T

ransistor

© 2002 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC337 / BC338 Rev. 1.5

 

September 2015

BC337 / BC338 
NPN Epitaxial Silicon Transistor

Features

• Switching and Amplifier Applications

• Suitable for AF-Driver Stages and Low-Power Output Stages

• Complement to BC327 / BC328

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

A

 = 25 °C unless otherwise noted.

Part Number

Top Mark

Package

Packing Method

BC33716BU

BC33716

TO-92 3L

Bulk

BC33716TA

BC33716

TO-92 3L

Ammo

BC33716TFR

BC33716

TO-92 3L

Tape and Reel

BC33725BU

BC33725

TO-92 3L

Bulk

BC33725TA

BC33725

TO-92 3L

Ammo

BC33725TAR

BC33725

TO-92 3L

Ammo

BC33725TF

BC33725

TO-92 3L

Tape and Reel

BC33725TFR

BC33725

TO-92 3L

Tape and Reel

BC33740BU

BC33740

TO-92 3L

Bulk

BC33740TA

BC33740

TO-92 3L

Ammo

BC33825TA

BC33825

TO-92 3L

Ammo

Symbol

Parameter

Value

Unit

V

CES

Collector-Emitter Voltage 

BC337

50

V

BC338

30

V

CEO

Collector-Emitter Voltage 

BC337

45

V

BC338

25

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current (DC)

800

mA

T

J

Junction Temperature

150

°C

T

STG

Storage Temperature

-55 to 150

°C

1. Collector 

1 2

3

1

2

3

Straight Lead        Bent Lead

TO-92

Bulk Packing       Tape & Reel
                           Ammo Packing

2. Base 
3. Emitter

 

BC337 / BC338 — 

NPN 

Epit

axial Silicon T

ransistor

© 2002 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC337 / BC338 Rev. 1.5

2 

Thermal Characteristics

(1)

Values are at T

A

 = 25 °C unless otherwise noted.

Note: 

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at T

A

 = 25 °C unless otherwise noted.

h

FE

 Classification

Symbol

Parameter

Value

Unit

P

D

Power Dissipation

625

mW

Derate Above 25

°C

5.0

mW/

°C

R

ΘJA

Thermal Resistance, Junction-to-Ambient

200

°C/W

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BV

CEO

Collector-Emitter 
Breakdown Voltage

BC337

I

C 

= 10 mA, I

B 

= 0

45

V

BC338

25

BV

CES

Collector-Emitter 
Breakdown Voltage

BC337

I

C 

= 0.1 mA, V

BE 

= 0

50

V

BC338

30

BV

EBO

Emitter-Base Breakdown Voltage

I

E 

= 0.1 mA, I

C

 = 0

5

V

I

CES

Collector Cut-Off Current

BC337 V

CE 

= 45 V, I

B 

= 0

2

100

nA

BC338 V

CE 

= 25 V, I

B 

= 0

2

100

h

FE1

DC Current Gain

V

CE

 = 1 V, I

C

 = 100 mA

100

630

h

FE2

V

CE

 = 1 V, I

C

 = 300 mA 

60

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C 

= 500 mA, I

B 

= 50 mA

0.7

V

V

BE

(on)

Base-Emitter On Voltage

V

CE

 = 1 V, I

C

 = 300 mA 

1.2

V

f

T

Current Gain Bandwidth Product

V

CE

 = 5 V, I

C

 = 10 mA,

f = 50 MHz

100

MHz

C

ob

Output Capacitance

V

CB

 = 10 V, I

E 

= 0, 

f = 1 MHz

12

pF

Classification

16

25

40

h

FE1

100 ~ 250

160 ~ 400

250 ~ 630

h

FE2

60 ~

100 ~

170 ~ 

BC337 / BC338 — 

NPN 

Epit

axial Silicon T

ransistor

© 2002 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC337 / BC338 Rev. 1.5

3 

Physical Dimensions

Figure 1. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type

BC337 / BC338 — 

NPN 

Epit

axial Silicon T

ransistor

© 2002 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC337 / BC338 Rev. 1.5

4 

Physical Dimensions 

(Continued)

Figure 2. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type

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