Caracteristicas tecnicas de BC548

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Boletines de correo

BC546 / BC547 / BC548 / BC549 / BC550 —

NPN

Epit

axia

l Silicon T

ransistor

www.fairchildsemi.com

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1

November 2014

BC546 / BC547 / BC548 / BC549 / BC550
NPN Epitaxial Silicon Transistor

Features

• Switching and Amplifier

• High-Voltage: BC546, V

CEO

= 65 V

• Low-Noise: BC549, BC550

• Complement to BC556, BC557, BC558, BC559, and BC560

Ordering Information

Part Number

Marking

Package

Packing Method

BC546ABU

BC546A

TO-92 3L

Bulk

BC546ATA

BC546A

TO-92 3L

Ammo

BC546BTA

BC546B

TO-92 3L

Ammo

BC546BTF

BC546B

TO-92 3L

Tape and Reel

BC546CTA

BC546C

TO-92 3L

Ammo

BC547ATA

BC547A

TO-92 3L

Ammo

BC547B

TO-92 3L

Bulk

BC547BBU

BC547B

TO-92 3L

Bulk

BC547BTA

BC547B

TO-92 3L

Ammo

BC547BTF

BC547B

TO-92 3L

Tape and Reel

BC547CBU

BC547C

TO-92 3L

Bulk

BC547CTA

BC547C

TO-92 3L

Ammo

BC547CTFR

BC547C

TO-92 3L

Tape and Reel

BC548BU

BC548

TO-92 3L

Bulk

BC548BTA

BC548B

TO-92 3L

Ammo

BC548CTA

BC548C

TO-92 3L

Ammo

BC549BTA

BC549B

TO-92 3L

Ammo

BC549BTF

BC549B

TO-92 3L

Tape and Reel

BC549CTA

BC549C

TO-92 3L

Ammo

BC550CBU

BC550C

TO-92 3L

Bulk

BC550CTA

BC550C

TO-92 3L

Ammo

1. Collector 2. Base 3. Emitter

TO-92

BC546 / BC547 / BC548 / BC549 / BC550 —

NPN

Epit

axia

l Silicon T

ransistor

www.fairchildsemi.com

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

= 25 °C unless otherwise noted.

Electrical Characteristics

Values are at T

= 25 °C unless otherwise noted.

Classification

Symbol

Parameter

Value

Unit

CBO

Collector-Base Voltage

BC546

BC547 / BC550

BC548 / BC549

CEO

Collector-Emitter Voltage

BC546

BC547 / BC550

BC548 / BC549

EBO

Emitter-Base Voltage

BC546 / BC547

BC548 / BC549 / BC550

Collector Current (DC)

100

Collector Power Dissipation

500

Junction Temperature

150

°C

STG

Storage Temperature Range

-65 to +150

°C

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

CBO

Collector Cut-Off Current

= 30 V, I

= 0

DC Current Gain

= 5 V, I

= 2 mA

110

800

(sat)

Collector-Emitter Saturation
Voltage

= 10 mA, I

= 0.5 mA

250

= 100 mA, I

= 5 mA

250

600

(sat)

Base-Emitter Saturation Voltage

= 10 mA, I

= 0.5 mA

700

= 100 mA, I

= 5 mA

900

(on)

Base-Emitter On Voltage

= 5 V, I

= 2 mA

580

660

700

= 5 V, I

= 10 mA

720

Current Gain Bandwidth Product

= 5 V, I

= 10 mA,

f = 100 MHz

300

MHz

Output Capacitance

= 10 V, I

= 0, f = 1 MHz

3.5

6.0

Input Capacitance

= 0.5 V, I

= 0, f = 1 MHz

Noise
Figure

BC546 / BC547 / BC548 V

= 5 V, I

= 200

μA,

f = 1 kHz, R

= 2 k

Ω

2.0

10.0

BC549 / BC550

1.2

4.0

BC549

= 5 V, I

= 200

μA,

= 2 k

Ω, f = 30 to 15000 MHz

1.4

4.0

BC550

1.4

3.0

Classification

110 ~ 220

200 ~ 450

420 ~ 800

BC546 / BC547 / BC548 / BC549 / BC550 —

NPN

Epit

axia

l Silicon T

ransistor

www.fairchildsemi.com

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1

Typical Performance Characteristics

Figure 1. Static Characteristic

Figure 2. Transfer Characteristic

Figure 3. DC Current Gain

Figure 4. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

Figure 5. Output Capacitance

Figure 6. Current Gain Bandwidth Product

100

= 50

= 100

= 150

= 200

= 250

= 300

= 350

= 400

ECT

R CURRENT

[V], COLLECTOR-EMITTER VOLTAGE

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

100

= 5V

], COLLECT

CURRE

[V], BASE-EMITTER VOLTAGE

100

1000

100

1000

= 5V

, DC C

URRENT

GAIN

[mA], COLLECTOR CURRENT

100

1000

100

1000

10000

= 10 I

(sat)

(sa

t), V

(sa

t)[

SAT

TIO

AGE

[mA], COLLECTOR CURRENT

100

1000

0.1

100

f=1MHz

= 0

[pF]

, CA

CITA

NCE

[V], COLLECTOR-BASE VOLTAGE

0.1

100

1000

= 5V

CURR

ENT G

IN-B

ANDW

IDTH PRODUCT

[mA], COLLECTOR CURRENT

BC546 / BC547 / BC548 / BC549 / BC550 —

NPN

Epit

axia

l Silicon T

ransistor

www.fairchildsemi.com

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1

Physical Dimensions

Figure 7. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type

BC546 / BC547 / BC548 / BC549 / BC550 —

NPN

Epit

axia

l Silicon T

ransistor

www.fairchildsemi.com

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1

Physical Dimensions

(Continued)

Figure 8. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type

www.fairchildsemi.com

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Rev. I72