Caracteristicas tecnicas de BC558

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Boletines de correo

BC556 / BC557 / BC558 / BC559 / BC560 —

P Epit

axial Silicon

sis
tor

www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

January 2016

BC556 / BC557 / BC558 / BC559 / BC560
PNP Epitaxial Silicon Transistor

Features

• Switching and Amplifier

• High-Voltage: BC556, V

CEO

= -65 V

• Low-Noise: BC559, BC560

• Complement to BC546, BC547, BC548, BC549, and BC550

Ordering Information

Part Number

Marking

Package

Packing Method

BC556ABU

BC556A

TO-92 3L

Bulk

BC556ATA

BC556A

TO-92 3L

Ammo

BC556BTA

BC556B

TO-92 3L

Ammo

BC556BTF

BC556B

TO-92 3L

Tape and Reel

BC556BTFR

BC556B

TO-92 3L

Tape and Reel

BC557ATA

BC557A

TO-92 3L

Ammo

BC557BTA

BC557B

TO-92 3L

Ammo

BC557BTF

BC557B

TO-92 3L

Tape and Reel

BC558BTA

BC558B

TO-92 3L

Ammo

BC559BTA

BC559B

TO-92 3L

Ammo

BC559CTA

BC559C

TO-92 3L

Ammo

BC560CTA

BC560C

TO-92 3L

Ammo

1. Collector

1 2

Straight Lead Bent Lead

TO-92

Bulk Packing Tape & Reel
Ammo Packing

2. Base
3. Emitter

BC556 / BC557 / BC558 / BC559 / BC560 —

P Epit

axial Silicon

sis
tor

www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

= 25 °C unless otherwise noted.

Thermal Characteristics

(1)

Values are at T

= 25 °C unless otherwise noted.

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Symbol

Parameter

Value

Unit

CBO

Collector-Base Voltage

BC556

-80

BC557 / BC560

-50

BC558 / BC559

-30

CEO

Collector-Emitter Voltage

BC556

-65

BC557 / BC560

-45

BC558 / BC559

-30

EBO

Emitter-Base Voltage

-5

Collector Current (DC)

-100

Peak Collector Current (Pulse)

-200

Peak Base Current (Pulse)

-200

Junction Temperature

150

°C

STG

Storage Temperature Range

-65 to +150

°C

Symbol

Parameter

Max.

Unit

Total Power Dissipation

500

Derate Above 25

°C

4.0

mW/

°C

ΘJA

Thermal Resistance, Junction-to-Ambient

250

°C/W

BC556 / BC557 / BC558 / BC559 / BC560 —

P Epit

axial Silicon

sis
tor

www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Electrical Characteristics

Values are at T

= 25 °C unless otherwise noted.

Classification

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

CBO

Collector Cut-Off Current

= -30 V, I

= 0

-15

DC Current Gain

= -5 V, I

= -2 mA

110

800

(sat)

Collector-Emitter Saturation
Voltage

= -10 mA, I

= -0.5 mA

-90

-300

= -100 mA, I

= -5 mA

-250

-650

(sat)

Collector-Base Saturation Voltage

= -10 mA, I

= -0.5 mA

-700

= -100 mA, I

= -5 mA

-900

(on)

Base-Emitter On Voltage

= -5 V, I

= -2 mA

-600

-660

-750

= -5 V, I

= -10 mA

-800

Current Gain Bandwidth Product

= -5 V, I

= -10 mA,

f = 10 MHz

150

MHz

Output Capacitance

= -10 V, I

= 0, f = 1 MHz

Noise
Figure

BC556 / BC557 / BC558 V

= -5 V, I

= -200

μA,

f = 1 kHz, R

= 2 k

Ω

BC559 / BC560

BC559

= -5 V, I

= -200

μA,

= 2 k

Ω, f = 30 to 15000 MHz

1.2

4.0

BC560

1.2

2.0

Classification

110 ~ 220

200 ~ 450

420 ~ 800

BC556 / BC557 / BC558 / BC559 / BC560 —

P Epit

axial Silicon

sis
tor

www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Typical Performance Characteristics

Figure 1. Static Characteristic

Figure 2. DC Current Gain

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage

Figure 6. Collector Output Capacitance

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

-0

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

= -50

= -100

= -150

= -200

= -250

= -300

= -350

= -400

ECT

R CURRENT

[V], COLLECTOR-EMITTER VOLTAGE

-1

-10

-100

-1000

100

1000

= -55

= 25

= -5V

, DC CURR

[mA], COLLECTOR CURRENT

= 150

-1

-10

-100

-1000

-0.01

-0.1

-1

-10

= -55

= 25

= 20 I

at)

], CO

-E

[mA], COLLECTOR CURRENT

= 150

-1

-10

-100

-1000

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

= -55

= 25

= 20 I

(sat) [V], BASE-EMITTER SATURATION VOLTAGE

[

], COLLECTOR CUR

= 150

-10

-100

-1000

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

= -55

= 25

= -5V

(on) [V], BASE-EMITTER ON VOLTAGE

], CO

= 150

-1

-10

-100

f=1MHz

= 0

(pF

), CA

PACI

[V], COLLECTOR-BASE VOLTAGE

BC556 / BC557 / BC558 / BC559 / BC560 —

P Epit

axial Silicon

sis
tor

www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Typical Performance Characteristics

(Continued)

Figure 7. Current Gain Bandwidth Product

Figure 8. Power Deration

Figure 9. Normalized Transient Thermal Resistance

-1

-10

100

1000

= -5V

[MHz],

CURRE

NT GAI

-BA

NDWID

TH P

ODUCT

[mA], COLLECTOR CURRENT

100

150

100

1000

POWER

ISSIPATIO

N, P

AMBIENT TEMPERATURE, [

1E-5

1E-4

1E-3

0.01

0.1

100

1000

0.01

0.1

100

1000

50%

r(t

Normalized

ransient

hermal Resist

ance

t1, time(sec)

Single Pulse

30%

10%

D=1%

Rthja(t)=r(t)*Rthja

Rthja=250

C/W

BC556 / BC557 / BC558 / BC559 / BC560 —

P Epit

axial Silicon

sis
tor

www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Physical Dimensions

Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION, BULK

BC556 / BC557 / BC558 / BC559 / BC560 —

P Epit

axial Silicon

sis
tor

www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Physical Dimensions

(Continued)

Figure 11. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM, AMMO, TAPE AND REEL

www.fairchildsemi.com

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intended to be an exhaustive list of all such trademarks.

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Saving our world, 1mW/W/kW at a time™
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Solutions for Your Success

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STEALTH

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¥-6

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¥-8

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SyncFET

Sync-Lock™

®*

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Datasheet Identification

Product Status

Definition

Advance Information

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Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.

Preliminary First

Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.

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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.

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The datasheet is for reference information only.

Rev. I77