BD135 / 137 / 139 

—
 NPN 

Epit

axial 

Silicon T

ra

n

sis
tor

© 2007 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BD135 / 137 / 139 Rev. 1.2.0

1 

August 2013

BD135 / 137 / 139
NPN Epitaxial Silicon Transistor

Features

• Complement to BD136, BD138 and BD140 respectively

Applications

•

Medium Power Linear and Switching

Ordering Information

Part Number

Marking

Package

Packing Method

BD13516S

BD135-16

TO-126 3L

Bulk

BD1356STU

BD135-6

Rail

BD13510STU

BD135-10

BD13516STU

BD135-16

BD13716STU

BD137-16

BD13710STU

BD137-10

BD13716S

BD137-16

Bulk

BD13916STU

BD139-16

Rail

BD13910S

BD139-10

Bulk

BD13916S

BD139-16

BD1396STU

BD139-6

Rail

BD13910STU

BD139-10

1

TO-126

1. Emitter    2.Collector    3.Base

BD135 / 137 / 139 

—
 Fe
ature

s

© 2007 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BD135 / 137 / 139 Rev. 1.2.0

2 

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The 

absolute maximum ratings are stress ratings only. Values are at T

C

 = 25 °C unless otherwise noted.

Electrical Characteristics

Values are at T

C 

= 25

°C unless otherwise noted. 

h

FE

 Classification

Symbol

Parameter

Value

Units

 V

CBO

Collector-Base Voltage

BD135

45

V

BD137

60

BD139

80

 V

CEO

Collector-Emitter Voltage

BD135

45

V

BD137

60

BD139

80

 

V

EBO

Emitter-Base Voltage

5

V

 

I

C

Collector Current (DC)

1.5

A

 

I

CP

Collector Current (Pulse)

3.0

A

 

I

B

Base Current

0.5

A

 

P

C

Device Dissipation 

T

C 

= 25

°C

12.5

W

T

A

 = 25

°C

1.25

W

 T

J

Junction Temperature

150

°C

 T

STG

Storage Temperature

- 55 to +150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V

CEO

(sus)

Collector-Emitter Sustaining 
Voltage

BD135

I

C 

= 30 mA, I

B 

= 0

 

45

V

BD137

60

BD139

80

I

CBO

Collector Cut-off Current

V

CB

 = 30 V, I

E

 = 0

0.1

μA

I

EBO

Emitter Cut-off Current

V

EB

 = 5 V, I

C

 = 0

10

μA

h

FE1

DC Current Gain

V

CE

 = 2 V, I

C

 = 5 mA

25

h

FE2

V

CE

 = 2 V, I

C

 = 0.5 A

25

h

FE3

V

CE

 = 2 V, I

C

 = 150 mA

40

250

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C 

= 500 mA, I

B 

= 50 mA

0.5

V

V

BE

(on)

Base-Emitter On Voltage

V

CE

 = 2 V, I

C

 = 0.5 A 

1

V

Classification

6

10

16

h

FE3

40 ~ 100

63 ~ 160

100 ~ 250

BD135 / 137 / 139 

—
 Fe
ature

s

© 2007 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BD135 / 137 / 139 Rev. 1.2.0

3 

Typical Performance Characteristics

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage

Figure 3. Base-Emitter Voltage

Figure 4. Safe Operating Area

Figure 5. Power Derating

10

100

1000

0

10

20

30

40

50

60

70

80

90

100

V

CE

 = 2V

 

 

h

FE

, D

C

 C

URREN

T

 G

A

IN

I

C

[mA], COLLECTOR CURRENT

1E-3

0.01

0.1

1

10

0

50

100

150

200

250

300

350

400

450

500

I

C

 =

 1

0

 I

B

I

C

 =

 2

0

 I

B

 

 

V

CE

(sat)

[mV], SAT

U

R

AT

ION VOLT

AGE

I

C

[A], COLLECTOR CURRENT

1E-3

0.01

0.1

1

10

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

V

BE

(on

)

V

CE

 = 

5V

V

BE

(sa

t)

I

C

 = 

10

 I

B

 

 

V

BE

[V], BASE-EMITT

E

R VOLT

AGE

I

C

[A], COLLECTOR CURRENT

1

10

100

0.01

0.1

1

10

BD
139

BD
137

BD
135

10us

100us

1

m

s

D

C

I

C

 MAX. (Pulsed)

I

C

 MAX. (Continuous)

 

 

I

C

[A], CO

LLECT

OR

 CURR

ENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0

25

50

75

100

125

150

175

0.0

2.5

5.0

7.5

10.0

12.5

15.0

17.5

20.0

 

 

P

C

[W

],

 PO

WER DI

SS

IP

A

T

IO

N

T

C

[

o

C], CASE TEMPERATURE

BD135 / 137 / 139 

—
 Fe
ature

s

© 2007 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BD135 / 137 / 139 Rev. 1.2.0

4 

Physical Dimensions 

Figure 6. TO-126 (SOT-32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner 
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or 
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the 
warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/TO/TO126AA.pdf

.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-TO126AA_BK.pdf

.

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TO-126 3L

 

© Fairchild Semiconductor Corporation 

 

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