BDX53/A/B/C — NP

N Epit

ax
ia

l Silicon T

ransistor

© 2011 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BDX53/A/B/C Rev. B0

1 

March 2011

BDX53/A/B/C
NPN Epitaxial Silicon Transistor

Applications

• Hammer Drivers, Audio Amplifiers Applications
• Power Liner and Switching Applications

Features

• Power Darlington TR
• Complement to BDX54, BDX54A, BDX54B and BDX54C respectively

Absolute Maximum Ratings  

T

C

 = 25 °C unless otherwise noted

Symbol

Parameter

Value

Units

 V

CBO

 Collector-Base Voltage     : BDX53

      : BDX53A
      : BDX53B
      : BDX53C

 45
 60
 80

100

V
V
V
V

 V

CEO

 Collector-Emitter Voltage  : BDX53

      : BDX53A
      : BDX53B
      : BDX53C

 45
 60
 80

100

V
V
V
V

 

V

EBO

 Emitter-Base Voltage

  5

V

 I

C

 Collector Current (DC)

  8

A

 I

CP

 *Collector Current (Pulse)

 12

A

 I

B

 Base Current

0.2

A

 P

C

 Collector Dissipation (T

C 

= 25

°C)

 60

W

 T

J

 Junction Temperature

150

°C

 T

STG

 Storage Temperature

- 65 to 150

°C

R2

0.3k

Ω

•‰…

1.Base    2.Collector    3.Emitter

1

TO-220

Equivalent Circuit

B

E

C

R1

R2

R1

8.4k

Ω

•‰…

BDX53/A/B/C — NP

N Epit

ax
ia

l Silicon T

ransistor

© 2011 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BDX53/A/B/C Rev. B0

2 

Electrical Characteristics  

T

C 

= 25

°C unless otherwise noted

* Pulse Test: PW=300

μs, duty Cycle =1.5% Pulsed

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

 V

CEO

(sus) * Collector-Emitter Sustaining Voltage

      : BDX53
      : BDX53A
      : BDX53B
      : BDX53C

 I

C 

= 100mA, I

B 

= 0

 45
 60
 80

100

V
V
V
V

 I

CBO

 Collector Cut-off Current   : BDX53

      : BDX53A
      : BDX53B
      : BDX53C

 V

CB 

= 45V, I

E 

= 0

 V

CB 

= 60V, I

E 

= 0

 V

CB 

= 80V, I

E 

= 0

 V

CB 

= 100V, I

E 

= 0

200
200
200
200

μA

μA
μA

μA

 I

CEO

 Collector Cut-off Current   : BDX53

      : BDX53A
      : BDX53B
      : BDX53C

 V

CE 

= 22V, I

B 

= 0

 V

CE 

= 30V, I

B 

= 0

 V

CE 

= 40V, I

B 

= 0

 V

CE 

= 50V, I

B 

= 0

500
500
500
500

μA
μA

μA

μA

 

I

EBO

 Emitter Cut-off Current

 V

EB 

= 5V, I

C 

= 0

2

mA

 

h

FE

* DC Current Gain

 V

CE 

= 3V, I

C 

= 3A

750

 V

CE

(sat)

* Collector-Emitter Saturation Voltage

 I

C 

= 3A, I

B 

= 12mA

  2

V

 V

BE

(sat)

* Base-Emitter Saturation Voltage               I

C 

= 3A, I

B 

= 12mA

2.5

V

 V

F

* Parallel Diode Forward Voltage

 I

F 

= 3A

 I

F 

= 8A

1.8
2.5

2.5

V
V

BDX53/A/B/C — NP

N Epit

ax
ia

l Silicon T

ransistor

© 2011 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BDX53/A/B/C Rev. B0

3 

Typical Performance Characteristics

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Damper Diode Forward Voltage

Figure 5. Safe Operating Area

Figure 6. Power Derating

0.1

1

10

100

1000

10000

100000

V

CE

 = 3V

 

 

h

FE

, DC C

URR

ENT

 GAIN

I

C

[A], COLLECTOR CURRENT

0.1

1

10

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

3.4

I

C

 = 250I

B

 

 

V

BE

(sat)[

V], SAT

URAT

ION

 VOLT

AGE

I

C

[A], COLLECTOR CURRENT

0.1

1

10

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

I

C

 = 250I

B

 

 

V

CE

(s

at)[V],

 SATU

R

ATIO

N VO

LTA

G

E

I

C

[A], COLLECTOR CURRENT

0.1

1

10

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

 

 

V

F

(sat)[

V], FO

RW

ARD

 VOL

T

AG

E

I

F

[A], FORWARD CURRENT

1

10

100

1000

0.1

1

10

100

BDX53C

BDX53B

BDX53A

I

C

 Max. (Continuous)

I

C

 Max. (Pulsed)

BDX53

D

C

100us

10us

1ms

 

I

C

[A], C

O

LL

ECTO

R C

URR

ENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0

25

50

75

100

125

150

175

0

10

20

30

40

50

60

70

80

 

 

P

C

[W

],

 P

O

W

E

R

 D

IS

S

IP

A

T

IO

N

T

C

[

o

C], CASE TEMPERATURE

BDX53/A/B/C — NP

N Epit

ax
ia

l Silicon T

ransistor

© 2011 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BDX53/A/B/C Rev. B0

4 

Physical Dimensions

4.50 

±

0.20

9.90 

±

0.20

1.52 

±

0.10

0.80 

±

0.10

2.40 

±

0.20

10.00 

±

0.20

1.27 

±

0.10

ø3.60 

±

0.10

(8.70)

2.80 

±

0.10

15.90 

±

0.20

10.08 

±

0.30

18.95MAX.

(1.70)

(3.70)

(3.00)

(1.46)

(1.00)

(45

°

)

9.20 

±

0.20

13.08 

±

0.20

1.30 

±

0.10

1.30

+0.10
-0.05

0.50

+0.10
-0.05

2.54TYP

[2.54 

±

0.20

]

2.54TYP

[2.54 

±

0.20

]

TO-220

Dimensions in Millimeters

© Fairchild Semiconductor Corporation 

 

www.fairchildsemi.com 

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Rev. I53