BF244A
BF244B
BF244C

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications
operating up to 450 MHz, and for analog switching requiring low
capacitance.  Sourced from Process 50.

Absolute Maximum Ratings*      

TA = 25 °C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics      

TA = 25 °C unless otherwise noted

Symbol

Characteristic

Max

Units

BF244A / BF244B / BF244C

P

D

Total Device Dissipation

Derate above 25

°

C

350

2.8

mW

mW/

°

C

R

Θ

JC

Thermal Resistance, Junction to Case

125

°

C/W

R

Θ

JA

Thermal Resistance, Junction to Ambient

357

°

C/W

Symbol

Parameter

Value

Units

V

DG

Drain-Gate Voltage

30

V

V

GS

Gate-Source Voltage

- 30

V

I

D

Drain Current

50

mA

I

GF

Forward Gate Current

10

mA

T

stg

Storage Temperature Range

-55 to +150

°

C

S

G

D

TO-92



1997 Fairchild Semiconductor Corporation

BF244A / BF244B / BF244C

5

Electrical Characteristics      

TA = 25 °C unless otherwise noted

OFF CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

ON CHARACTERISTICS

I

DSS

Zero-Gate Voltage Drain Current

V

DS

 = 15 V, V

GS

 = 0 

244A
244B
244C

2.0
6.0

12

6.5

15
25

mA
mA
mA

SMALL SIGNAL CHARACTERISTICS

y

fs

Forward Transfer Admittance

V

DS

 = 15 V, V

GS

 = 0, f = 1.0 kHz

V

DS

 = 15 V, V

GS

 = 0, f = 200 MHz

3.0

5.6

6.5

mmhos
mmhos

y

os

Output Admittance

V

DS

 = 15 V, V

GS

 = 0, f = 1.0 kHz

40

µ

mhos

y

rs

Reverse Transfer Admittance

V

DS

 = 15 V, V

GS

 = 0, f = 200 MHz

1.0

µ

mhos

C

iss

Input Capacitance

V

DS

 = 20 V, V

GS

 = - 1.0 V

3.0

pF

C

rss

Reverse Transfer Capacitance

V

DS

 = 20 V, V

GS

 = - 1.0 V,

f = 1.0 MHz

0.7

pF

C

oss

Output Capacitance

V

DS

 = 20 V, V

GS

 = - 1.0 V,

f = 1.0 MHz

0.9

pF

NF

Noise Figure

V

DS

 = 15 V, V

GS

 = 0, R

G

 = 1.0 k

Ω¦

,

f = 100 MHz

1.5

dB

F(Y

fs

)

Cut-Off Frequency

V

DS

 = 15 V, V

GS

 = 0

700

MHz

Typical Characteristics

V

(BR)GSS

Gate-Source Breakdown Voltage

I

G

 = 1.0 

µ

A, V

DS

 = 0

30

V

I

GSS

Gate Reverse Current

V

GS

 = - 20 V, V

DS

 = 0

5.0

nA

V

GSS(off)

Gate-Source Cutoff Voltage

V

DS

 = 15 V, I

D

 = 10 nA

- 0.5

- 8.0

V

V

GS

Gate-Source Voltage

V

DS

 = 15 V, I

D

 = 200 

µ

A

244A
244B
244C

- 0.4
- 1.6
- 3.2

- 2.2
- 3.8
- 7.5

V
V
V

Transfer Characteristics

-5

-4

-3

-2

-1

0

0

4

8

12

16

20

V   - GATE-SOURCE VOLTAGE(V)

I  

- DR

AI

N

 C

U

R

R

E

N

T

 (

m

A

)

D

GS(OFF)

V             = -4.5V

V        = 15V

DS

T   = +25   C

A

O

-2.5 V

T    = -55  C

O

A

T   = +125  C

A

O

T    = -55  C

O

A

T   = +25   C

A

O

T   = +125  C

A

O

GS

Channel Resistance vs Temperature

-50

0

50

100

150

10

20

30

50

100

200

300

500

1000

T   - AMBIENT TEMPERATURE ( C)

r   

 -

 DR

A

IN 

O

N

 RE

S

IS

T

A

NCE

 (

   )

Ω¦

V             = -1.0V

GS(OFF)

-2.5 V

-5.0V

-8.0 V

V        = 100mV

DS

V        = 0 V

GS

DS

A

BF244A / BF244B / BF244C

N-Channel RF Amplifier

(continued)