1

Transistors

Publication date: March 2003

SJC00104CED

2SC1383, 2SC1384

Silicon NPN epitaxial planar type

For low-frequency power amplification and driver amplification

Complementary to 2SA0683, 2SA0684

•–  Features

• Low collector-emitter saturation voltage V

CE(sat)

• Complementary pair with 2SA0683, 2SA0684

•–  Absolute Maximum Ratings  T

a

 

= 25 °C

Unit: mm

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage

2SC1383

V

CBO

I

C

 

= 10  µA, I

E

 = 0

30

V

(Emitter open)

2SC1384

60

Collector-emitter voltage

2SC1383

V

CEO

I

C

 

= 2 mA, I

B

 

=  0

25

V

(Base open)

2SC1384

50

Emitter-base voltage (Collector open)

V

EBO

I

E

 

= 10  µA, I

C

 

=  0

5

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

= 20 V, I

E

 

= 0

0.1

µA

Forward current transfer ratio 

*1

h

FE1

 

*2

V

CE

 

= 10 V, I

C

 

= 500 mA

85

340



h

FE2

V

CE

 

= 5 V, I

C

 

= 1 A

50



Collector-emitter saturation voltage

V

CE(sat)

I

C

 

= 500 mA, I

B

 

= 50 mA

0.2

0.4

V

Base-emitter saturation voltage

V

BE(sat)

I

C

 

= 500 mA, I

B

 

= 50 mA

0.85

1.20

V

Transition frequency

f

T

V

CB

 

= 10 V, I

E

 

= -50 mA, f = 200 MHz

200

MHz

Collector output capacitance

C

ob

V

CB

 

= 10 V, I

E

 

= 0, f = 1 MHz

11

20

pF

(Common base, input open circuited)

5.9

±0.2

0.7

±0.1

4.9

±0.2

8.6

±

0.2

0.7

+0.3 -0.2

13.5

±

0.5

2.54

±0.15

(3.2)

(1.27)

(1.27)

0.45

+0.2

-0.1

0.45

+0.2

-0.1

1

3

2

1: Emitter
2: Collector
3: Base

EIAJ: SC-51

TO-92L-A1 Package

Parameter

Symbol

Rating

Unit

Collector-base voltage

2SC1383

V

CBO

30

V

(Emitter open)

2SC1384

60

Collector-emitter voltage 2SC1383

V

CEO

25

V

(Base open)

2SC1384

50

Emitter-base voltage (Collector open)

V

EBO

5

V

Collector current

I

C

1

A

Peak collector current

I

CP

1.5

A

Collector power dissipation

P

C

1

W

Junction temperature

T

j

150

°C

Storage temperature

T

stg

-55 to +150

°C

•–  Electrical Characteristics  T

a

 

= 25 °C  ± 3 °C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Rank

Q

R

S

h

FE1

85 to 170

120 to 240

170 to 340

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2SC1383, 2SC1384

2

SJC00104CED

P

C

 

 T

a

I

C

 

 V

CE

I

C

 

 I

B

V

CE(sat)

 

 I

C

V

BE(sat)

 

 I

C

h

FE

 

 I

C

f

T

 

 I

E

C

ob

 

 V

CB

V

CER

 

 R

BE

0

160

40

120

80

0

1.2

1.0

0.8

0.6

0.4

0.2

Collector power dissipation  P

C

  (W)

Ambient temperature  T

a

  (

°C)

0

10

8

2

6

4

0

1.50

1.25

1.00

0.75

0.50

0.25

I

B

 

= 10 mA

9 mA

8 mA

7 mA

6 mA

5 mA

4 mA

3 mA

2 mA

1 mA

T

a

 

= 25 °C

Collector current  I

C

  (A)

Collector-emitter voltage  V

CE

  (V)

0

12

10

8

2

6

4

0

1.2

1.0

0.8

0.6

0.4

0.2

V

CE

 

= 10 V

T

a

 

= 25 °C

Base current  I

B

  (mA)

Collector current  I

C

  (A)

0.01

0.1

1

10

0.001

0.01

0.1

1

10

I

C

 / I

B

 

= 10

T

a

 

= 75 °C

25

°C

-25 °C

Collector-emitter saturation voltage  V

CE(sat)

  (V)

Collector current  I

C

  (A)

0.01

0.1

1

10

0.01

0.1

1

10

100

I

C

 / I

B

 

= 10

T

a

 

= -25 °C

25

°C

75

°C

Base-emitter saturation voltage  V

BE(sat)

  (V)

Collector current  I

C

  (A)

0.01

0.1

1

10

0

600

500

400

300

200

100

V

CE

 

= 10 V

T

a

 

= 75 °C

25

°C

-25 °C

Forward current transfer ratio  h

FE

Collector current  I

C

  (A)

-1

-10

-100

0

200

160

120

80

40

V

CB

 

= 10 V

T

a

 

= 25 °C

Transition frequency  f

T

  (MHz)

Emitter current  I

E

  (mA)

1

10

100

0

50

40

30

20

10

I

E

 

= 0

f 

= 1 MHz

T

a

 

= 25 °C

Collector-base voltage  V

CB

  (V)

Collector output capacitance  

C

ob

  (pF)

  (Common base circuited)

0.1

1

10

100

0

120

100

80

60

40

20

I

C

 

= 10 mA

T

a

 

= 25 °C

2SC1384

2SC1383

Collector-emitter voltage

  (Resistor between B and E)

  

V

CER

  (V)

Base-emitter resistance  R

BE

  (k

Ω¦)

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2SC1383, 2SC1384

3

SJC00104CED

I

CEO

 

 T

a

Safe operation area

0

160

40

120

80

1

10

10

2

10

3

10

4

V

CE

 

= 10 V

Ambient temperature  T

a

  (

°C)

I

CEO

  (T

a

)

I

CEO

  (T

a

 =

 25

°C)

0.1

1

10

100

0.001

0.01

0.1

1

10

Single pulse
T

a

 

= 25 °C

t 

= 10 ms

2SC1384

2SC1383

t 

= 1 s

I

CP

I

C

Collector current  I

C

  (A)

Collector-emitter voltage  V

CE

  (V)

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2002 JUL

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