| Secciones |
|---|
| Foros Electrónica |
|
|
| Boletines de correo |
 |
2SC458, 2SC2308
Silicon NPN Epitaxial
Application
Low frequency amplifier
Complementary pair with 2SA1029 and 2SA1030
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
2SC458, 2SC2308
2
Absolute Maximum Ratings (Ta = 25 °C)
Item
Symbol
2SC458
2SC2308
Unit
Collector to base voltage
V
CBO
30
55
V
Collector to emitter voltage
V
CEO
30
50
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
100
100
mA
Emitter current
I
E
-100
-100
mA
Collector power dissipation
P
C
200
200
mW
Junction temperature
Tj
150
150
°
C
Storage temperature
Tstg
-55 to +150
-55 to +150
°
C
2SC458, 2SC2308
3
Electrical Characteristics (Ta = 25 °C)
2SC458
2SC2308
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30
55
V
I
C
= 10
΅
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30
50
V
I
C
= 1 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
5
V
I
E
= 10
΅
A, I
C
= 0
Collector cutoff current
I
CBO
0.5
0.5
΅
A
V
CB
=18 V, I
E
= 0
Emitter cutoff current
I
EBO
0.5
0.5
΅
A
V
EB
= 2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
100
500
100
320
V
CE
= 12 V, I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
0.2
0.2
V
I
C
= 10 mA, I
B
= 1 mA
Base to emitter voltage
V
BE
0.67
0.75
0.67
0.75
V
V
CE
= 12 V, I
C
= 2 mA
Gain bandwidth product f
T
230
230
MHz
V
CE
= 12 V, I
C
= 2 mA
Collector output
capacitance
Cob
1.8
3.5
1.8
3.5
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Noise figure
NF
4
10
4
10
dB
V
CE
= 6 V, I
C
= 0.1 mA,
f = 1 kHz, R
g
= 500
Ω¦
Small signal input
impedance
h
ie
16.5
16.5
k
Ω¦
V
CE
= 5V, I
C
= 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
h
re
70
70
×
10
-6
Small signal current
trancefer ratio
h
fe
130
130
Small signal output
admittance
h
oe
11.0
11.0
΅
S
Note:
1. The 2SC458 and 2SC2308 are grouped by h
FE
as follows.
B
C
D
2SC458
100 to 200
160 to 320
250 to 500
2SC2308
100 to 200
160 to 320
See characteristic curves of 2SC458 (LG) and 2SC2310 except for the followings.
2SC458, 2SC2308
4
0
50
100
150
Ambient Temperature Ta (
°
C)
Collector Power Dissipation P
C
(mW)
Maximum Collector Dissipation Curve
300
200
100
Noise Figure vs. Frequency
Noise Figure NF (dB)
0
100
1k
3k
300
10k
30k
30
4
8
12
16
20
Frequency f (Hz)
I
C
= 0.1 mA
R
g
= 500
Ω¦
V
CE
= 6 V
Collector to Emitter Voltage V
CE
(V)
1
Noise Figure NF (dB)
Noise Figure vs. Collector to Emitter Voltage
8
6
4
2
0
30
20
10
5
2
I
C
= 0.1 mA
R
g
= 500
Ω¦
f = 1kHz
0.60 Max
0.5
±
0.1
4.8
±
0.3
3.8
±
0.3
5.0
±
0.2
0.7
2.3 Max
12.7 Min
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Unit: mm
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third partys rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra §e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
