Document Number: 91031

 www.vishay.com

S11-0509-Rev. B, 21-Mar-11

1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 

www.vishay.com/doc?91000

Power MOSFET

IRF630, SiHF630

Vishay Siliconix

  

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast  Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

DD

 = 50 V, starting T

J

 = 25 °C, L = 4.6 mH, R

g

 = 25 

Ω, I

AS

 = 9.0 A (see fig. 12).

c. I

SD

 

ï‚£ 9.0 A, dI/dt ï‚£ 120 A/μs, V

DD

 

ï‚£ V

DS

, T

J

 

ï‚£ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

V

DS

 (V)

200

R

DS(on)

 (

Ω)

V

GS

 = 10 V 

0.40

Q

g

 (Max.) (nC)

43

Q

gs

 (nC)

7.0

Q

gd

 (nC)

23

Configuration

Single

N-Channel MOSFET 

G

D

S

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRF630PbF

SiHF630-E3 

SnPb

IRF630

SiHF630

ABSOLUTE MAXIMUM RATINGS (T

C

 = 25  °C, unless otherwise noted)

PARAMETER SYMBOL

LIMIT

UNIT

Drain-Source Voltage 

V

DS

200

V 

Gate-Source Voltage

V

GS

  ± 

20 

Continuous Drain Current

V

GS

 at 10 V

T

C

 = 25 °C 

I

D

9.0

A

T

C

 = 100 °C 

5.7

Pulsed Drain Current

a

I

DM

 36

Linear Derating Factor

0.59

W/ °C 

Single Pulse Avalanche Energy

b

E

AS 

250

mJ 

Repetitive Avalanche Current

a

I

AR 

9.0

A 

Repetitive Avalanche Energy

a

E

AR

7.4

mJ 

Maximum Power Dissipation

T

C

 = 25 °C 

P

D

74

W 

Peak Diode Recovery dV/dt

c

dV/dt 5.0

V/ns 

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to + 150 

°C 

Soldering Recommendations (Peak Temperature)

for 10 s

300

d

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N  · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

 

www.vishay.com

 

Document Number: 91031

2

S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 

www.vishay.com/doc?91000

IRF630, SiHF630

Vishay Siliconix

 

  

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 

ï‚£ 300 μs; duty cycle ï‚£ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

R

thJA

-

62

°C/W

Case-to-Sink, Flat, Greased Surface

R

thCS

0.50

-

Maximum Junction-to-Case (Drain)

R

thJC

-

1.7

SPECIFICATIONS (T

J

 = 25  °C, unless otherwise noted)

PARAMETER SYMBOL

TEST 

CONDITIONS MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage 

V

DS 

V

GS

 = 0 V, I

D

 = 250 μA 

200

-

-

V 

V

DS

 Temperature Coefficient 

�V

DS

/T

J

 

Reference to 25 °C, I

D

 = 1 mA 

-

0.24

-

V/ °C 

Gate-Source Threshold Voltage 

V

GS(th)

V

DS

 = V

GS

, I

D

 = 250 μA 

2.0

-

4.0

V 

Gate-Source Leakage 

I

GSS

 

V

GS

 = ± 20 V

-

-

± 100

nA 

Zero Gate Voltage Drain Current 

I

DSS 

V

DS

 = 200 V, V

GS

 = 0 V 

-

-

25

μA 

V

DS

 = 160 V, V

GS

 = 0 V, T

J

 = 125 °C 

-

-

250

Drain-Source On-State Resistance 

R

DS(on)

 

V

GS

 = 10 V

I

D

 = 5.4 A

b

-

-

0.40

Ω

Forward Transconductance 

g

fs

V

DS

 = 50 V, I

D

 = 5.4 A

3.8

-

-

S 

Dynamic

Input Capacitance 

C

iss 

V

GS

 = 0 V, 

V

DS

 = 25 V,

f = 1.0 MHz, see fig. 5 

-

800

-

pF

Output Capacitance 

C

oss

 -

240

-

Reverse Transfer Capacitance 

C

rss

 

-

76

-

Total Gate Charge 

Q

g

 

V

GS

 = 10 V 

I

D

 = 5.9 A, V

DS

 = 160 V, 

see fig. 6 and 13

b

-

-

43

nC 

Gate-Source Charge 

Q

gs

 

-

-

7.0

Gate-Drain Charge

Q

gd

 

-

-

23

Turn-On Delay Time 

t

d(on)

 

V

DD

 = 100 V, I

D

 = 5.9 A, 

R

g

 = 12 

Ω, R

D

 = 16 

Ω, see fig. 10

b

-

9.4

-

ns

Rise Time

t

r 

-

28

-

Turn-Off Delay Time 

t

d(off)

 

-

39

-

Fall Time 

t

f

 

-

20

-

Internal Drain Inductance 

L

D 

Between lead,
6 mm (0.25") from 
package and center of 
die contact 

-

4.5

-

nH 

Internal Source Inductance

L

S

-

7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current 

I

S

MOSFET symbol
showing the 
integral reverse
p - n junction diode

-

-

9.0

A

Pulsed Diode Forward Current

a

I

SM

-

-

36

Body Diode Voltage

V

SD

T

J

 = 25  °C, I

S

 = 9.0 A, V

GS

 = 0 V

b

-

-

2.0

V

Body Diode Reverse Recovery Time

t

rr

T

J

 = 25  °C, I

F

 = 5.9 A, dI/dt = 100 A/

µs

-

170

340

ns

Body Diode Reverse Recovery Charge

Q

rr

-

1.1

2.2

nC

Forward Turn-On Time

t

on

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

 and L

D

)

D

S

G

S

D

G

 

Document Number: 91031

 www.vishay.com

S11-0509-Rev. B, 21-Mar-11

3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 

www.vishay.com/doc?91000

IRF630, SiHF630

 

Vishay Siliconix

  

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, T

C

 = 25 °C

Fig. 2 -Typical Output Characteristics, T

C

 = 150 °C

Fig. 3 -  Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

91031_01

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

 = 

25 °C

4.5 V

V

DS

, Drain-to-Source Voltage (V)

I

D

, Dr

ain Current (A)

10

0

10

1

10

1

10

0

10

-1

10

-1

10

1

10

0

10

-1

10

0

10

1

V

DS,

 Drain-to-Source Voltage (V)

I

D

, Dr

ain Current (A)

Bottom

Top

V

GS

15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V

20 µs Pulse Width
T

C

 = 

150 °C

91031_02

4.5 V

10

-1

20 µs Pulse Width
V

DS

 = 

50 V

10

1

10

0

10

-1

I

D

, Dr

ain Current (A)

V

GS,

 Gate-to-Source Voltage (V)

5

6

7

8

9

10

4

25 

°

C

150 

°

C

91031_03

I

D

 

= 5.9 A

V

GS

 

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J,

 Junction Temperature ( °C)

R

DS(on)

, Dr

ain-to-Source On Resistance

(Nor

maliz

ed)

91031_04

- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

 

www.vishay.com

 

Document Number: 91031

4

S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 

www.vishay.com/doc?91000

IRF630, SiHF630

Vishay Siliconix

 

  

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

1600

1200

800

0

400

10

0

10

1

Capacitance (pF)

V

DS,

 Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS 

= 0 V, f = 1 MHz

C

iss

 = C

gs

 + C

gd

, C

ds

 Shorted

C

rss

 = C

gd

C

oss

 = C

ds

 + C

gd

91031_05

Q

G

, Total Gate Charge (nC)

V

GS

, Gate-to-Source 

V

o

ltage (V)

20

16

12

8

0

4

0

10

50

40

30

20

For test circuit
see figure 13

91031_06

I

D

 = 5.9 A

V

DS

 = 160 V

V

DS

 = 40 V

V

DS

 = 100 V

10

1

10

0

V

SD

, Source-to-Drain Voltage (V)

I

SD

, Re

v

erse Dr

ain Current (A)

0.5

1.3

1.1

0.9

0.7

25 

°

C

150 

°

C

V

GS

 

= 0 V

91031_07

1.5

10 

µs

100 

µs

1 

ms

10 

ms

Operation in this area limited

by R

DS(on)

V

DS

, Drain-to-Source Voltage (V)

I

D

, Dr

ain Current (A)

T

C

 = 25  °C

T

J

 = 150  °C

Single Pulse

10

3

10

2

0.1

2

5

0.1

2

5

1

2

5

10

2

5

2

5

1

2

5

10

2

5

10

2

2

5

10

3

2

5

10

4

91031_08

 

Document Number: 91031

 www.vishay.com

S11-0509-Rev. B, 21-Mar-11

5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 

www.vishay.com/doc?91000

IRF630, SiHF630

 

Vishay Siliconix

  

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

I

D

, Dr

ain Current (A)

T

C

, Case Temperature ( °C)

0

2

4

6

8

10

25

150

125

100

75

50

91031_09

Pulse width 

≤ 1 µs

Duty factor 

≤ 0.1 % 

R

D

V

GS

R

G

D.U.T.

10 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1

1

10

P

DM

t

1

t

2

t

1

, Rectangular Pulse Duration (s)

Ther

mal Response (Z

thJC

)

Notes:
1.  Duty Factor, D = t

1

/t

2

2.  Peak T

j

 = P

DM

 x Z

thJC

 + T

C

Single Pulse
(Thermal Response)

0 

-

 0.5

0.2

0.1

0.05

0.02

0.01

91031_11

R

G

I

AS

0.01 

Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

A

10 V

Vary t

p

 to obtain

required I

AS

I

AS

V

DS

V

DD

V

DS

t

p

 

www.vishay.com

 

Document Number: 91031

6

S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 

www.vishay.com/doc?91000

IRF630, SiHF630

Vishay Siliconix

 

  

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

600

0

100

200

300

400

500

25

150

125

100

75

50

Starting T

J

, Junction Temperature ( °C)

E

AS

, Single Pulse Energy (mJ)

Bottom

Top

I

D

4.0 A
5.7 A
9.0 A

V

DD

 = 50 V

91031_12c

Q

GS

Q

GD

Q

G

V

G

Charge

10 V

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3  µF

0.2  µF

50 k

Ω

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

 

Document Number: 91031

 www.vishay.com

S11-0509-Rev. B, 21-Mar-11

7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 

www.vishay.com/doc?91000

IRF630, SiHF630

 

Vishay Siliconix

  

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see 

http://www.vishay.com/ppg?91031

.

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple 

≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS 

= 10 V

a

  

I

SD

Driver gate drive

D.U.T. l

SD

 waveform

D.U.T. V

DS

 waveform

Inductor current

D = 

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

•  dV/dt controlled by R

g

•  Driver same type as D.U.T.
• 

 

I

SD 

controlled by duty factor †œD†�

•  D.U.T. - device under test

D.U.T.

Circuit layout considerations

•  Low stray inductance
•  Ground plane
•  Low leakage inductance

current transformer

R

g

Note

a. V

GS

 = 5 V for logic level devices

V

DD

Package Information

www.vishay.com

Vishay Siliconix

 

 

Revison: 14-Dec-15

1

Document Number: 66542

For technical questions, contact: 

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 

www.vishay.com/doc?91000

TO-220-1

Note

• M* = 0.052 inches to 0.064 inches (dimension including

protrusion), heatsink hole for HVM

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

DIM.

MILLIMETERS

INCHES

MIN.

MAX.

MIN.

MAX.

A

4.24

4.65

0.167

0.183

b

0.69

1.02

0.027

0.040

b(1)

1.14

1.78

0.045

0.070

c

0.36

0.61

0.014

0.024

D

14.33

15.85

0.564

0.624

E

9.96

10.52

0.392

0.414

e

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

F

1.14

1.40

0.045

0.055

H(1)

6.10

6.71

0.240

0.264

J(1)

2.41

2.92

0.095

0.115

L

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

Ø P

3.53

3.94

0.139

0.155

Q

2.54

3.00

0.100

0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Package Picture

ASE

Xi’an

Legal Disclaimer Notice

www.vishay.com

Vishay

 

Revision: 13-Jun-16

1

Document Number: 91000

Disclaimer


ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE 
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, 
†œVishay†�), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other 
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or 
the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all 
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, 
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular 
purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of 
typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding 
statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a 
particular product with the properties described in the product specification is suitable for use in a particular application. 
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over 
time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s 
technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, 
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining 
applications or for any other application in which the failure of the Vishay product could result in personal injury or death. 
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. 
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for 
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document 
or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners.