| Secciones |
|---|
| Foros Electrónica |
|
|
| Boletines de correo |
 |
IRF840, SiHF840
www.vishay.com
Vishay Siliconix
S16-0754-Rev. D, 02-May-16
1
Document Number: 91070
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
FEATURES
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 C, L = 14 mH, R
g
= 25
Ω, I
AS
= 8.0 A (see fig. 12).
c. I
SD
8.0 A, dI/dt 100 A/μs, V
DD
V
DS
, T
J
150 C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V)
500
R
DS(on)
(
Ω)
V
GS
= 10 V
0.85
Q
g
max. (nC)
63
Q
gs
(nC)
9.3
Q
gd
(nC)
32
Configuration
Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
Available
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRF840PbF
SiHF840-E3
SnPb
IRF840
SiHF840
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C, unless otherwise noted)
PARAMETER SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS
500
V
Gate-Source Voltage
V
GS
20 V
Continuous Drain Current
V
GS
at 10 V
T
C
= 25 C
I
D
8.0
A
T
C
= 100 C
5.1
Pulsed Drain Current
a
I
DM
32
Linear Derating Factor
1.0
W/ C
Single Pulse Avalanche Energy
b
E
AS
510
mJ
Repetitive Avalanche Current
a
I
AR
8.0
A
Repetitive Avalanche Energy
a
E
AR
13
mJ
Maximum Power Dissipation
T
C
= 25 C
P
D
125
W
Peak Diode Recovery dV/dt
c
dV/dt 3.5
V/ns
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to +150
C
Soldering Recommendations (Peak temperature)
d
for 10 s
300
Mounting Torque
6-32 or M3 screw
10 lbf
in
1.1
N m
IRF840, SiHF840
www.vishay.com
Vishay Siliconix
S16-0754-Rev. D, 02-May-16
2
Document Number: 91070
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
R
thJA
-
62
C/W
Case-to-Sink, Flat, Greased Surface
R
thCS
0.50
-
Maximum Junction-to-Case (Drain)
R
thJC
-
1.0
SPECIFICATIONS (T
J
= 25 C, unless otherwise noted)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
500
-
-
V
V
DS
Temperature Coefficient
V
DS
/T
J
Reference to 25 C, I
D
= 1 mA
-
0.78
-
V/ C
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA
2.0
-
4.0
V
Gate-Source Leakage
I
GSS
V
GS
= 20 V
-
-
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 500 V, V
GS
= 0 V
-
-
25
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 C
-
-
250
Drain-Source On-State Resistance
R
DS(on)
V
GS
= 10 V
I
D
= 4.8 A
b
-
-
0.85
Ω
Forward Transconductance
g
fs
V
DS
= 50 V, I
D
= 4.8 A
b
4.9
-
-
S
Dynamic
Input Capacitance
C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
1300
-
pF
Output Capacitance
C
oss
-
310
-
Reverse Transfer Capacitance
C
rss
-
120
-
Total Gate Charge
Q
g
V
GS
= 10 V
I
D
= 8 A, V
DS
= 400 V,
see fig. 6 and 13
b
-
-
63
nC
Gate-Source Charge
Q
gs
-
-
9.3
Gate-Drain Charge
Q
gd
-
-
32
Turn-On Delay Time
t
d(on)
V
DD
= 250 V, I
D
= 8 A
R
g
= 9.1
Ω, R
D
= 31
Ω, see fig. 10
b
-
14
-
ns
Rise Time
t
r
-
23
-
Turn-Off Delay Time
t
d(off)
-
49
-
Fall Time
t
f
-
20
-
Internal Drain Inductance
L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-
4.5
-
nH
Internal Source Inductance
L
S
-
7.5
-
Gate Input Resistance
R
g
f = 1 MHz, open drain
0.6
-
2.8
Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
-
-
8.0
A
Pulsed Diode Forward Current
a
I
SM
-
-
32
Body Diode Voltage
V
SD
T
J
= 25 C, I
S
= 8 A, V
GS
= 0 V
b
-
-
2.0
V
Body Diode Reverse Recovery Time
t
rr
T
J
= 25 C, I
F
= 8 A, dI/dt = 100 A/μs
b
-
460
970
ns
Body Diode Reverse Recovery Charge
Q
rr
-
4.2
8.9
μC
Forward Turn-On Time
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
IRF840, SiHF840
www.vishay.com
Vishay Siliconix
S16-0754-Rev. D, 02-May-16
3
Document Number: 91070
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 C
Fig. 2 - Typical Output Characteristics, T
C
= 150 C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
91070_01
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
ain Current (A)
10
1
10
0
10
0
10
1
Bottom
Top
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 s Pulse Width
T
C
=
25 C
4.5 V
91070_02
10
1
10
0
10
0
10
1
I
D
, Dr
ain Current (A)
4.5 V
Bottom
Top
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 s Pulse Width
T
C
=
150 C
V
DS,
Drain-to-Source Voltage (V)
91070_03
25
C
150
C
20 s Pulse Width
V
DS
=
50 V
10
1
10
0
I
D
, Dr
ain Current (A)
V
GS,
Gate-to-Source Voltage (V)
5
6
7
8
9
10
4
91070_04
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20
0
20
40
60 80 100 120 140 160
T
J,
Junction Temperature ( C)
R
DS(on)
, Dr
ain-to-Source On Resistance
(Nor
maliz
ed)
I
D
= 8.0 A
V
GS
= 10 V
91070_05
2500
2000
1500
1000
0
500
10
0
10
1
Capacitance (pF)
V
DS,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91070_06
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source
V
o
ltage (V)
20
16
12
8
0
4
0
15
75
60
45
30
I
D
= 8.0 A
For test circuit
see figure 13
V
DS
= 250 V
V
DS
= 100 V
V
DS
= 400 V
IRF840, SiHF840
www.vishay.com
Vishay Siliconix
S16-0754-Rev. D, 02-May-16
4
Document Number: 91070
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
91070_07
10
1
10
0
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Re
v
e
rse Dr
ain Current (A)
0.4
1.0
0.8
0.6
25
C
150
C
V
GS
= 0 V
1.4
1.2
91070_08
10
s
100
s
1
ms
10
ms
T
C
= 25 C
T
J
= 150 C
Single Pulse
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
ain Current (A)
10
2
0.1
2
5
2
1
5
10
2
5
2
5
1
2
5
10
2
5
10
2
2
5
10
3
2
5
10
4
0.1
Operation in this area limited
by R
DS(on)
91070_09
I
D
, Dr
ain Current (A)
T
C
, Case Temperature ( C)
0.0
2.0
4.0
6.0
8.0
25
150
125
100
75
50
Pulse width
≤ 1 s
Duty factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
0
- 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
Ther
mal Response (Z
th
JC
)
10
-5
10
-4
10
-3
10
-2
0.1
1
10
10
2
10
1
0.1
10
-3
10
-2
IRF840, SiHF840
www.vishay.com
Vishay Siliconix
S16-0754-Rev. D, 02-May-16
5
Document Number: 91070
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
10 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
91070_12c
Bottom
Top
I
D
3.6 A
5.1 A
8.0 A
V
DD
= 50 V
1200
0
200
400
600
800
1000
25
150
125
100
75
50
Starting T
J
, Junction Temperature ( C)
E
AS
, Single Pulse Energy (mJ)
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 F
0.2 F
50 k
Ω
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
IRF840, SiHF840
www.vishay.com
Vishay Siliconix
S16-0754-Rev. D, 02-May-16
6
Document Number: 91070
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?91070
.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 V
a
V
DD
I
SD
Driver gate drive
D.U.T. I
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Note
a. V
GS
= 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
V
DD
dV/dt controlled by R
g
Driver same type as D.U.T.
I
SD
controlled by duty factor D
D.U.T. - device under test
D.U.T.
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
R
g
Package Information
www.vishay.com
Vishay Siliconix
Revison: 14-Dec-15
1
Document Number: 66542
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TO-220-1
Note
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
DIM.
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
Ø P
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Package Picture
ASE
Xian
Legal Disclaimer Notice
www.vishay.com
Vishay
Revision: 13-Jun-16
1
Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customers responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
