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Semiconductor Components Industries, LLC, 2006
January, 2006 - Rev. 3
1
Publication Order Number:
MPF102/D
MPF102
Preferred Devices
JFET VHF Amplifier
N-Channel - Depletion
Features
Pb-Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain -Source Voltage
V
DS
25
Vdc
Drain -Gate Voltage
V
DG
25
Vdc
Gate-Source Voltage
V
GS
-25
Vdc
Gate Current
I
G
10
mAdc
Total Device Dissipation
@ T
A
= 25
C
Derate above 25
C
P
D
350
2.8
mW
mW/
C
Junction Temperature Range
T
J
125
C
Storage Temperature Range
T
stg
-65 to +150
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
TO-92 (TO-226AA)
CASE 29-11
STYLE 5
1
2
3
MARKING DIAGRAM
MPF102 = Device Code A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb-Free Package
MPF
102
AYWW
G
G
Preferred devices are recommended choices for future use and best overall value.
Device
Shipping
ORDERING INFORMATION
MPF102
1000 Units/Bulk
MPF102G
TO-92
(Pb-Free)
1000 Units/Bulk
(Note: Microdot may be in either location)
Package
TO-92
MPF102
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate -Source Breakdown Voltage
(I
G
= -10
m
Adc, V
DS
= 0)
V
(BR)GSS
-25
-
Vdc
Gate Reverse Current
(V
GS
= -15 Vdc, V
DS
= 0)
(V
GS
= -15 Vdc, V
DS
= 0, T
A
= 100
C)
I
GSS
- -
-2.0 -2.0
nAdc
m
Adc
Gate -Source Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 2.0 nAdc)
V
GS(off)
-
-8.0
Vdc
Gate -Source Voltage
(V
DS
= 15 Vdc, I
D
= 0.2 mAdc)
V
GS
-0.5
-7.5
Vdc
ON CHARACTERISTICS
Zero -Gate -V
(V
DS
= 15 Vdc, V
GS
= 0 Vdc)
I
DSS
2.0
20
mAdc
SMALL- SIGNAL CHARACTERISTICS
Forward T
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
(V
DS
= 15 Vdc, V
GS
= 0, f = 100 MHz)
y
fs
2000 1600
7500
-
m
mhos
Input Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 100 MHz)
Re(y
is
)
-
800
m
mhos
Output Conductance
(V
DS
= 15 Vdc, V
GS
= 0, f = 100 MHz)
Re(y
os
)
-
200
m
mhos
Input Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
-
7.0
pF
Reverse Transfer Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
-
3.0
pF
1. Pulse Test; Pulse Width
v
630 ms, Duty Cycle
v
10%.
MPF102
http://onsemi.com
3
f, FREQUENCY (MHz)
30
10
b
is
@ I
DSS
f, FREQUENCY (MHz)
5.0
Figure 1. Input Admittance (y
is
)
Figure 2. Reverse Transfer Admittance (y
rs
)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25
C)
f, FREQUENCY (MHz)
20
f, FREQUENCY (MHz)
10
Figure 3. Forward Transfer Admittance (y
fs
)
Figure 4. Output Admittance (y
os
)
g
is
, INPUT
CONDUCT
ANCE
(mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20
30
50 70 100
200 300
500 700 1000
b
is
, INPUT
SUSCEPT
ANCE
(mmhos)
g
fs
, FOR
W
ARD
TRANSCONDUCT
ANCE
(mmhos)
|b
fs
|, FOR
W
ARD
SUSCEPT
ANCE
(mmhos)
g
rs
, REVERSE
TRANSADMITT
ANCE
(mmhos)
b
rs
, REVERSE SUSCEPT
ANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g
os
, OUTPUT
ADMITT
ANCE (mhos)
b
os
, OUTPUT
SUSCEPT
ANCE (mhos)
3.0
0.05
0.07
0.1
0.2
0.3
0.7 0.5
1.0
2.0
10
20
30
50
70
100
200 300
500 700 1000
10
20
30
50 70 100
200 300
500 700 1000
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
30
50 70
100
200 300
500 700 1000
b
is
@ 0.25 I
DSS
g
is
@ I
DSS
g
is
@ 0.25 I
DSS
b
rs
@ I
DSS
0.25 I
DSS
g
rs
@ I
DSS
, 0.25 I
DSS
g
fs
@ I
DSS
|b
fs
| @ I
DSS
|b
fs
| @ 0.25 I
DSS
b
os
@ I
DSS
and 0.25 I
DSS
g
os
@ I
DSS
g
os
@ 0.25 I
DSS
g
fs
@ 0.25 I
DSS
MPF102
http://onsemi.com
4
Figure 5. S
11s
Figure 6. S
12s
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
1.0
0.9
0.8
0.7
0.6
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.6
0.5
0.4
0.3
0.3
0.4
0.5
0.6
900
900
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
600
700
800
900
500
I
D
= I
DSS
, 0.25 I
DSS
900
500
800
700
600
500
400
300
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
900
600
700
800
900
800
600
400
300
200
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
900
100
500
700
300
400
500
600
700
800
Figure 7. S
21s
Figure 8. S
22s
COMMON SOURCE CHARACTERISTICS
S-PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25
C, Data Points in MHz)
MPF102
http://onsemi.com
5
f, FREQUENCY (MHz)
10
g
ig
@ I
DSS
f, FREQUENCY (MHz)
0.5
Figure 9. Input Admittance (y
ig
)
Figure 10. Reverse Transfer Admittance (y
rg
)
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DG
= 15 Vdc, T
channel
= 25
C)
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 11. Forward Transfer Admittance (y
fg
)
Figure 12. Output Admittance (y
og
)
g
ig
, INPUT
CONDUCT
ANCE
(mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20
30
50 70 100
200 300
500 700 1000
b
ig
, INPUT
SUSCEPT
ANCE
(mmhos)
g
fg
, FOR
W
ARD
TRANSCONDUCT
ANCE
(mmhos)
b
fg
, FOR
W
ARD
SUSCEPT
ANCE
(mmhos)
g
rg
, REVERSE
TRANSADMITT
ANCE
(mmhos)
b
rg
, REVERSE SUSCEPT
ANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g
og
, OUTPUT
ADMITT
ANCE (mmhos)
b
og
, OUTPUT
SUSCEPT
ANCE (mmhos)
0.3
0.01
0.1
0.2
10
20
30
50
70
100
200 300
500 700 1000
10
20
30
50
70 100
200 300
500 700 1000
0.01
0.02
0.03
0.3
10
20
30
50
70 100
200 300
500 700 1000
b
ig
@ 0.25 I
DSS
b
ig
@ I
DSS
g
rg
@ 0.25 I
DSS
g
fg
@ I
DSS
g
fg
@ 0.25 I
DSS
b
rg
@ 0.25 I
DSS
b
og
@ I
DSS
, 0.25 I
DSS
g
og
@ I
DSS
g
og
@ 0.25 I
DSS
0.2
0.005
0.007
0.02
0.03
0.05
0.07
0.1
0.05
0.07
0.1
0.2
0.5
0.7
1.0
b
rg
@ I
DSS
0.25 I
DSS
g
ig
@ I
DSS
, 0.25 I
DSS
b
fg
@ I
DSS
MPF102
http://onsemi.com
6
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
0
350
340
330
10
20
30
180
190
200
210
170
160
150
320
310
300
290
280
270
260
250
240
230
220
40
50
60
70
80
90
100
110
120
130
140
Figure 13. S
11g
Figure 14. S
12g
Figure 15. S
21g
Figure 16. S
22g
0.7
0.6
0.5
0.4
0.3
0.04
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.03
0.02
0.01
0.0
0.01
0.02
0.03
0.04
0.1
900
900
800
700
600
500
300
200
100
800
700
600
500
400
300
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
500
600
700
800
900
900
600
700
800
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
900
100
900
I
D
= 0.25 I
DSS
I
D
= I
DSS
1.5
100
400
500
600
700
800
900
I
D
= I
DSS
, 0.25 I
DSS
COMMON GATE CHARACTERISTICS
S-PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25
C, Data Points in MHz)
MPF102
http://onsemi.com
7
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X-X
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 5:
PIN 1. DRAIN
2. SOURCE 3. GATE
TO-92 (TO-226)
CASE 29-11
ISSUE AL
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800-282-9855 Toll Free USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850
MPF102/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your local Sales Representative.
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