M

P

SA93 — PNP High V

o

lt

age Am

plif

ier

© 2007 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

MPSA93 Rev. 1.0.0

1 

September 2007

MPSA93
PNP High Voltage Amplifier

• This device is designed for high voltage driver applications.
• Sourced from Process 76.

Absolute Maximum Ratings 

T

C

=25

°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics  

T

a

=25

°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6†� X 1.6†� X 0.06†�.

Symbol

Parameter

Value

Units

V

CEO

Collector-Emitter Voltage

200

V

V

CBO

Collector-Base Voltage

200

V

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current (DC)

500

mA

T

J

, T

STG

Operating and Storage Junction Temperature Range

-55 ~ +150

°C

Symbol

Parameter

Max.

Units

P

D

Total Device Dissipation
Derate above 25

°C

625

5.0

mW

mW/

°C

R

ΘJC

Thermal Resistance, Junction to Case

83.3

°C/W

R

ΘJA

Thermal Resistance, Junction to Ambient

200

°C/W

1. Collector   2. Base   3. Emitter

TO-92

1

M

P

SA93 — PNP High V

o

lt

age Am

plif

ier

© 2007 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

MPSA93 Rev. 1.0.0

2 

Electrical Characteristics 

T

C

=25

°C unless otherwise noted

* Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%

Notes:
1) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristics

V

(BR)CBO

Collector-Base Breakdown Voltage

I

C

 = 100

μA, I 

E

 = 0

200

V

V

(BR)CEO

Collector-Emitter Breakdown Voltage*

I

C 

= 1 mA, I 

B

 = 0

200

V

V

(BR)EBO

Emitter-Base Breakdown Voltage

I

E

 = 100

μA, I 

C

 = 0

5

V

I

EBO

Emitter Cut-off Current

V

EB

 = 3V,  I 

C

 = 0

0.1

μA

I

CBO

Collector Cut-off Current

V

CB

 = 200V, I 

E

 = 0

0.25

μA

On Characteristics

h

FE

DC Current Gain

V

CE

 = 10V, I

C

 = 1mA

V

CE

 = 10V, I

C

 = 10mA

V

CE

 = 10V, I

C

 = 30mA

25
40
25

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C 

= 20 mA, I

B 

= 2 mA

0.4

V

V

BE

(sat)

Base-Emitter Saturation Voltage

I

C 

= 20 mA, I

B 

= 2 mA

0.9

V

Small Signal Characteristics

C

cb

Collector-Base Capacitance

V

CB

 = 20 V, I

E

 

= 0, f = 1.0 MHz 

8

pF

f

T

Current Gain Bandwidth Product

V

CE

 = 5.0V, I

C

 = 10mA, f = 100MHz

50

MHz

MPSA9

3

  PNP High

 V

o

lt

a

g

e Amp

lifier

MP

SA9

3

 

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Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. 
Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make 
changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves 
the right to make changes at any time without notice to improve design. 

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.

Rev. I30

© 2007 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

MPSA93 Rev. 1.0.0

3