TDA2009A

 

10 +10W STEREO AMPLIFIER

September 2003

PIN CONNECTION

MULTIWATT11

ORDERING NUMBER : TDA2009A

®

.

HIGH OUTPUT POWER
(10 + 10W Min. @ D = 1%)

.

HIGH CURRENT CAPABILITY (UP TO 3.5A)

.

AC SHORT CIRCUIT PROTECTION

.

THERMAL OVERLOAD PROTECTION

.

SPACE AND COST SAVING : VERY LOW
NUMBER OF EXTERNAL COMPONENTS
AND SIMPLE MOUNTING THANKS TO THE
MULTIWATT 



  

PACKAGE.

DESCRIPTION

The TDA2009A is class AB dual Hi-Fi Audio power
amplifier assembled in Multiwatt 



 package, spe-

cially designed for high quality stereo application
as Hi-Fi and music centers.

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SCHEMATIC DIAGRAM

TDA2009A

2/12

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

V

s

Supply Voltage

28

V

I

o

Output Peak Current (repetitive f 

≥

 20 Hz)

3.5

A

I

o

Output Peak Current (non repetitive,  t = 100 

µ

s)

4.5

A

P

tot

Power Dissipation at T

case

 = 90 

°

C

20

W

T

stg,

 T

j

Storage and Junction Temperature

- 40, + 150

°

C

THERMAL DATA

Symbol

Parameter

Value

Unit

R

th j-case

Thermal Resistance Junction-case

Max.

3

°

C/W

ELECTRICAL CHARACTERISTICS

(refer to the stereo application circuit, T

amb

 = 25

o

C, V

S

 = 24V, G

V

 = 36dB, unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.  Max. 

Unit

V

s

Supply Voltage

8

28

V

V

o

Quiescent Output Voltage

V

s

 = 24V

11.5

V

I

d

Total Quiescent Drain Current

V

s

 = 24V

60

120

mA

P

o

Output Power (each channel)

d = 1%, V

s

 = 24V, f = 1kHz

R

L

 = 4

Ω¦

R

L

 = 8

Ω¦

f = 40Hz to 12.5kHz

R

L

 = 4

Ω¦

R

L

 = 8

Ω¦

V

s

 = 18V, f = 1kHz

R

L

 = 4

Ω¦

R

L

 = 8

Ω¦

10

5

12.5

7

7
4

W
W

W
W

W
W

d

Distortion (each channel)

f = 1kHz, V

s

 = 24V

P

o

 = 0.1 to 7W

R

L

 = 4

Ω¦

P

o

 = 0.1 to 3.5W

R

L

 = 8

Ω¦

V

s

 = 18V

P

o

 = 0.1 to 5W

R

L

 = 4 

Ω¦

P

o

 = 0.1 to 2.5W

R

L

 = 8

Ω¦

0.2
0.1

0.2
0.1

%
%

%
%

CT

Cross Talk (3)

R

L

 = 

•ˆž

, R

g

 = 10k

Ω¦

f = 1kHz
f = 10kHz

60
50

dB

V

i

Input Saturation Voltage (rms)

300

mV

R

i

Input Resistance

f = 1kHz, Non Inverting Input

70

200

k

Ω¦

f

L

Low Frequency Roll off (- 3dB)

R

L

 = 4

Ω¦

20

Hz

f

H

High Frequency Roll off (- 3dB)

R

L

 = 4

Ω¦

80

kHz

G

v

Voltage Gain (closed loop)

f = 1kHz

35.5

36

36.5

dB

∆

G

v

Closed Loop Gain Matching

0.5

dB

e

N

Total Input Noise Voltage

R

g

 = 10k

Ω¦

 (1)

R

g

 = 10k

Ω¦

 (2)

1.5
2.5

8

µ

V

µ

V

SVR

Supply Voltage Rejection (each channel)

R

g

 = 10k

Ω¦

f

ripple

 = 100Hz, V

ripple

 = 0.5V

55

dB

T

J

Thermal Shut-down Junction Temperature

145

°

C

Notes :

1.

Curve A

2.

22Hz to 22kHz

TDA2009A

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Figure 1 : Test and Application Circuit (G

V

 = 36dB)

Figure 2 : P.C. board and component layout of the fig. 1

TDA2009A

4/12

Figure 3 :

Output Power versus Supply Voltage

Figure 4 :

Output Power versus Supply Voltage

Figure 5 :

Distortion versus Output Power

Figure 6 :

Distortion versus Frequency

Figure 7 :

Distortion versus Frequency

Figure 8 :

Quiescent Current versus
Supply Voltage

TDA2009A

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Figure 9 :

Supply Voltage Rejection versus
Frequency

Figure 10 : Total Power Dissipation and

Efficiency versus Output Power

Figure 11 : Total Power Dissipation and

Efficiency versus Output Power

APPLICATION INFORMATION

Figure 12 : Example of Muting Circuit

TDA2009A

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Figure 13 : 10W +10W Stereo Amplifier with Tone Balance and Loudness Control

Figure 14 : Tone Control Response

(circuit of Figure 13)

TDA2009A

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Figure 15 : High Quality 20 + 20W Two Way Amplifier for Stereo Music Center (one channel only)

Figure 16 : 18W Bridge Amplifier (d = 1%, G

V

 = 40dB)

TDA2009A

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Figure 17 : P.C. BOARD and Components Layout of the Circuit of Figure 16 (1:1 scale)

APPLICATION   SUGGESTION

The recommended values of the components are those shown on application circuit of fig. 1. Different
values can be used ; the following table can help the designer.

Component

Recommended

Value

Purpose

Larger than

Smaller than

R1, R3

1.2k

Ω¦

Close Loop Gain
Setting (1)

Increase of Gain

Decrease of Gain

R2, R4

18k

Ω¦

Decrease of Gain

Increase of Gain

R5, R6

1

Ω¦

Frequency Stability

Danger of Oscillation at High
Frequency with Inductive Load

C1, C2

2.2

µ

F

Input DC Decoupling

High Turn-on Delay

High Turn-on Pop.
Higher Low Frequency
Cut-off. Increase of Noise

C3

22

µ

F

Ripple Rejection

Better SVR. Increase of the
Switch-on Time

Degradation of SVR

C6, C7

220

µ

F

Feedback Input DC
Decoupling

C8, C9

0.1

µ

F

Frenquency Stability

Danger of Oscillation

C10, C11

1000

µ

F to

2200

µ

F

Output DC
Decoupling

Higher Low-frequency
Cut-off

(1) The closed loop gain must be higher than 26dB.

The presence of a thermal limiting circuit offers the
following advantages:
1) an averload on the output (even if it is

per m a nen t ) ,  or  an  ex ces si ve am bient
temperature can be easily withstood.

2) the heatsink can have a smaller factor of safety

compared with that of a conventional circuit.
There is no device damage in the case of
excessive junction temperature : all that
happens is that P

o

 (and therefore P

tot

) and I

o

 are

reduced.

The maximum allowable power dissipation de-
pends upon the size of the external heatsink (i.e.
its thermal resistance); Figure 18 shows this dissi-
pable power as a function of ambient temperature
for different thermal resistance.

Short circuit (AC Conditions). The TDA2009A can
withstand an accidental short circuit from the output
and ground made by a wrong connection during
normal play operation.

BUILD-IN PROTECTION SYSTEMS
THERMAL SHUT-DOWN

TDA2009A

9/12

The power dissipated in the circuit must be re-
moved by adding an external heatsink.

Thanks to the MULTIWATT 



 package attaching

the heatsink is very simple, a screw or a compres-
sion spring (clip) being sufficient. Between the
heatsink and the package it is better to insert a layer
of silicon grease, to optimize the thermal contact ;
no electrical isolation is needed between the two

MOUNTING INSTRUCTIONS

Figure 18 : Maximum Allowable Power Dissipa-

tion versus Ambient Temperature

Figure 19 : Output Power versus Case

Temperature

Figure 20 : Output Power and Drain Current ver-

sus Case Temperature

TDA2009A

10/12

Multiwatt11 V

DIM.

mm

inch

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

A

5

0.197

B

2.65

0.104

C

1.6

0.063

D

1

0.039

E

0.49

0.55

0.019

0.022

F

0.88

0.95

0.035

0.037

G

1.45

1.7

1.95

0.057

0.067

0.077

G1

16.75

17

17.25

0.659

0.669

0.679

H1

19.6

0.772

H2

20.2

0.795

L

21.9

22.2

22.5

0.862

0.874

0.886

L1

21.7

22.1

22.5

0.854

0.87

0.886

L2

17.4

18.1

0.685

0.713

L3

17.25

17.5

17.75

0.679

0.689

0.699

L4

10.3

10.7

10.9

0.406

0.421

0.429

L7

2.65

2.9

0.104

0.114

M

4.25

4.55

4.85

0.167

0.179

0.191

M1

4.73

5.08

5.43

0.186

0.200

0.214

S

1.9

2.6

0.075

0.102

S1

1.9

2.6

0.075

0.102

Dia1

3.65

3.85

0.144

0.152

OUTLINE AND

MECHANICAL DATA

TDA2009A

11/12

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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All other names are the property of their respective owners

© 2003 STMicroelectronics - All rights reserved

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