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TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
1
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
•—
5 A Continuous On-State Current
•—
30 A Surge-Current
•—
Glass Passivated Wafer
•—
400 V to 800 V Off-State Voltage
•—
Max I
GT
of 200 µA
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 k
Ω¦.
2. These values apply for continuous dc operation with resistive load. Above 80 °C derate linearly to zero at 110 °C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80 °C derate
linearly to zero at 110 °C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC106D
TIC106M
TIC106S
TIC106N
V
DRM
400
600
700
800
V
Repetitive peak reverse voltage
TIC106D
TIC106M
TIC106S
TIC106N
V
RRM
400
600
700
800
V
Continuous on-state current at (or below) 80 °C case temperature (see Note 2)
I
T(RMS)
5
A
Average on-state current (180 ° conduction angle) at (or below) 80 °C case temperature
(see Note 3)
I
T(AV)
3.2
A
Surge on-state current at (or below) 25 °C (see Note 4)
I
TSM
30
A
Peak positive gate current (pulse width
≤ 300 µs)
I
GM
0.2
A
Peak gate power dissipation (pulse width
≤ 300 µs)
P
GM
1.3
W
Average gate power dissipation (see Note 5)
P
G(AV)
0.3
W
Operating case temperature range
T
C
-40 to +110
°C
Storage temperature range
T
stg
-40 to +125
°C
Lead temperature 1.6 mm from case for 10 seconds
T
L
230
°C
K
A
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
1
2
3
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
2
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTE
6: This parameter must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25 °C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
R
GK
= 1 k
Ω¦
T
C
= 110 °C
400
µA
I
RRM
Repetitive peak
reverse current
V
R
= rated V
RRM
I
G
= 0
T
C
= 110 °C
1
mA
I
GT
Gate trigger current
V
AA
= 12 V
R
L
= 100
Ω¦
t
p(g)
≥ 20 µs
5
200
µA
V
GT
Gate trigger voltage
V
AA
= 12 V
t
p(g)
≥ 20 µs
R
L
= 100
Ω¦
R
GK
= 1 k
Ω¦
T
C
= - 40 °C
1.2
V
V
AA
= 12 V
t
p(g)
≥ 20 µs
R
L
= 100
Ω¦
R
GK
= 1 k
Ω¦
0.4
0.6
1
V
AA
= 12 V
t
p(g)
≥ 20 µs
R
L
= 100
Ω¦
R
GK
= 1 k
Ω¦
T
C
= 110 °C
0.2
I
H
Holding current
V
AA
= 12 V
Initiating I
T
= 10 mA
R
GK
= 1 k
Ω¦
T
C
= - 40 °C
8
mA
V
AA
= 12 V
Initiating I
T
= 10 mA
R
GK
= 1 k
Ω¦
5
V
T
Peak on-state
voltage
I
T
= 5 A
(See Note 6)
1.7
V
dv/dt
Critical rate of rise of
off-state voltage
V
D
= rated V
D
R
GK
= 1 k
Ω¦
T
C
= 110 °C
10
V/ µs
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
ΘJC
Junction to case thermal resistance
3.5
°C/W
R
ΘJA
Junction to free air thermal resistance
62.5
°C/W
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
3
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 1.
Figure 2.
Figure 3.
Figure 4.
AVERAGE ANODE ON-STATE CURRENT
T
C
- Case Temperature - °C
30
40
50
60
70
80
90
100
110
I
T(
A
V
)
-
M
a
x
im
u
m
A
v
e
rag
e
A
n
o
d
e
F
o
rw
a
rd
C
u
rr
e
n
t
- A
0
1
2
3
4
5
6
TI20AA
DERATING CURVE
Φ = 180 º
Continuous DC
Conduction
Angle
Φ
0 °
180 °
ANODE POWER DISSIPATED
I
T
- On-State Current - A
1
10
100
P
A
-
A
n
o
d
e
P
o
w
e
r D
iss
ip
at
e
d
-
W
1
10
100
TI20AB
ON-STATE CURRENT
vs
T
J
= 110 °C
SURGE ON-STATE CURRENT
Consecutive 50 Hz Half-Sine-Wave Cycles
1
10
100
I
TM
-
Pe
a
k
H
a
lf
-S
in
e
-W
a
v
e
C
u
rr
e
n
t -
A
1
10
100
TI20AC
CYCLES OF CURRENT DURATION
vs
T
C
≤ 80 °C
No Prior Device Conduction
Gate Control Guaranteed
TRANSIENT THERMAL RESISTANCE
Consecutive 50 Hz Half-Sine-Wave Cycles
1
10
100
R
Θ
J
C
(t)
-
T
ran
si
en
t
T
h
e
rm
al
R
e
s
is
ta
n
c
e
-
°C
/W
0 ·1
1
10
TI20AD
CYCLES OF CURRENT DURATION
vs
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
4
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 5.
Figure 6.
Figure 7.
GATE TRIGGER VOLTAGE
T
C
- Case Temperature - °C
-50
-25
0
25
50
75
100
125
V
GT
- G
a
te
T
ri
g
g
e
r Vo
lt
a
g
e
- V
0 ·2
0 ·4
0 ·6
0 ·8
0
1
TC20AB
CASE TEMPERATURE
vs
V
AA
= 12 V
R
L
= 100
Ω¦
R
GK
= 1 k
Ω¦
t
p(g)
≥ 20 µs
HOLDING CURRENT
T
C
- Case Temperature - °C
-50
-25
0
25
50
75
100
125
I
H
-
H
o
ld
ing
C
ur
re
n
t -
m
A
0.1
1
10
TC20AD
CASE TEMPERATURE
vs
V
AA
= 12 V
R
GK
= 1 k
Ω¦
Initiating I
T
= 10 mA
PEAK ON-STATE VOLTAGE
I
TM
- Peak On-State Current - A
0 ·1
1
10
V
TM
- Pe
a
k
O
n
-S
ta
te
V
o
lt
a
g
e
-
V
0.0
0.5
1.0
1.5
2.0
2.5
TC20AE
vs
PEAK ON-STATE CURRENT
T
C
= 25 °C
t
p
= 300 µs
Duty Cycle
≤ 2 %
