| Secciones |
|---|
| Foros Electrónica |
|
|
| Boletines de correo |
 |
TIC226 SERIES
SILICON TRIACS
1
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
•—
8 A RMS
•—
Glass Passivated Wafer
•—
400 V to 800 V Off-State Voltage
•—
Max I
GT
of 50 mA (Quadrants 1 - 3)
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85 °C derate linearly to 110 °C case temperature at
the rate of 320 mA/ °C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC226D
TIC226M
TIC226S
TIC226N
V
DRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 85 °C case temperature (see Note 2)
I
T(RMS)
8
A
Peak on-state surge current full-sine-wave at (or below) 25 °C case temperature (see Note 3)
I
TSM
70
A
Peak gate current
I
GM
±1
A
Peak gate power dissipation at (or below) 85 °C case temperature (pulse width
≤ 200 µs)
P
GM
2.2
W
Average gate power dissipation at (or below) 85 °C case temperature (see Note 4)
P
G(AV)
0.9
W
Operating case temperature range
T
C
-40 to +110
°C
Storage temperature range
T
stg
-40 to +125
°C
Lead temperature 1.6 mm from case for 10 seconds
T
L
230
°C
electrical characteristics at 25 °C case temperature (unless otherwise noted )
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
I
G
= 0
T
C
= 110 °C
±2
mA
I
GT
Gate trigger
current
V
supply
= +12 V†
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
R
L
= 10
Ω¦
R
L
= 10
Ω¦
R
L
= 10
Ω¦
R
L
= 10
Ω¦
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
6
-12
-10
25
50
-50
-50
mA
V
GT
Gate trigger
voltage
V
supply
= +12 V†
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
R
L
= 10
Ω¦
R
L
= 10
Ω¦
R
L
= 10
Ω¦
R
L
= 10
Ω¦
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
0.7
-0.8
-0.8
0.9
2
-2
-2
2
V
V
T
On-state voltage
I
T
= ±12 A
I
G
= 50 mA
(see Note 5)
±1.5
±2.1
V
† All voltages are with respect to Main Terminal 1.
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
TIC226 SERIES
SILICON TRIACS
2
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, t
p
=
≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
Ω¦, t
p(g)
= 20
µs, t
r
=
≤ 15 ns, f = 1 kHz.
I
H
Holding current
V
supply
= +12 V†
V
supply
= -12 V†
I
G
= 0
I
G
= 0
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
10
-6
30
-30
mA
I
L
Latching current
V
supply
= +12 V†
V
supply
= -12 V†
(see Note 6)
50
-50
mA
dv/dt
Critical rate of rise of
off-state voltage
V
DRM
= Rated V
DRM
I
G
= 0
T
C
= 110 °C
±100
V/ µs
dv/dt
(c)
Critical rise of commu-
tation voltage
V
DRM
= Rated V
DRM
I
TRM
= ±12 A
T
C
= 85 °C
(see figure 7)
±5
V/ µs
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
ΘJC
Junction to case thermal resistance
1.8
°C/W
R
ΘJA
Junction to free air thermal resistance
62.5
°C/W
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
electrical characteristics at 25 °C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GATE TRIGGER CURRENT
T
C
- Case Temperature - °C
-60
-40
-20
0
20
40
60
80
100
120
I
GT
- G
a
te
T
ri
g
g
e
r Cu
rr
e
n
t - m
A
1
10
100
1000
TC01AA
CASE TEMPERATURE
vs
V
AA
= ± 12 V
R
L
= 10
Ω¦
t
p(g)
= 20 µs
V
supply
I
GTM
+ +
+ -
- -
- +
GATE TRIGGER VOLTAGE
T
C
- Case Temperature - °C
-60
-40
-20
0
20
40
60
80
100
120
V
GT
-
G
a
te
T
ri
g
g
e
r
Vo
lt
a
g
e
-
V
0 ·1
1
10
TC01AB
CASE TEMPERATURE
vs
V
AA
= ± 12 V
R
L
= 10
Ω¦
t
p(g)
= 20 µs
V
supply
I
GTM
+ +
+ -
- -
- +
}
TIC226 SERIES
SILICON TRIACS
3
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 3.
Figure 4.
THERMAL INFORMATION
Figure 5.
Figure 6.
HOLDING CURRENT
T
C
- Case Temperature - °C
-60
-40
-20
0
20
40
60
80
100
120
I
H
-
H
o
ld
ing
C
u
rr
e
nt
-
m
A
0 ·1
1
10
100
1000
TC01AD
CASE TEMPERATURE
vs
V
supply
+
-
V
AA
= ± 12 V
I
G
= 0
Initiating I
TM
= 100 mA
LATCHING CURRENT
T
C
- Case Temperature - °C
-60
-40
-20
0
20
40
60
80
100
120
I
L
-
La
tc
h
ing
C
u
rr
e
nt
- m
A
1
10
100
1000
TC01AE
CASE TEMPERATURE
vs
V
AA
= ± 12 V
V
supply
I
GTM
+ +
+ -
- -
- +
MAX RMS ON-STATE CURRENT
T
C
- Case Temperature - °C
0
25
50
75
100
125
I
T(
R
M
S
)
- M
a
x
im
u
m
O
n
-S
ta
te
Cu
rre
n
t - A
0
1
2
3
4
5
6
7
8
9
10
TI01AB
CASE TEMPERATURE
vs
MAX AVERAGE POWER DISSIPATED
I
T(RMS)
- RMS On-State Current - A
0
2
4
6
8
10
12
14
16
P
(a
v
)
-
M
axi
mu
m A
v
er
a
g
e
P
o
w
e
r D
iss
ip
at
e
d
-
W
0
4
8
12
16
20
24
28
32
TI01AC
RMS ON-STATE CURRENT
vs
Conduction Angle = 360 °
Above 8 A rms
T
J
= 110 °C
See I
TSM
Figure
TIC226 SERIES
SILICON TRIACS
4
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
PARAMETER MEASUREMENT INFORMATION
Figure 7.
V
AC
V
MT2
I
MT2
DUT
See
Note A
R
G
C1
R1
I
G
V
AC
I
MT2
V
MT2
I
G
I
TRM
dv/dt
10%
63%
L1
V
DRM
50 Hz
PMC2AA
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 µs.
