TIP120 / TIP121 / TIP122 — NPN Epi

taxial Darlington T

ransistor

© 2001 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP120 / TIP121 / TIP122 Rev. 1.1.0

November 2014

TIP120 / TIP121 / TIP122
NPN Epitaxial Darlington Transistor

Features

• Medium Power Linear Switching Applications
• Complementary to TIP125 / TIP126 / TIP127

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The 
absolute maximum ratings are stress ratings only. Values are at T

C

 = 25 °C unless otherwise noted.

Part Number

Top Mark

Package

Packing Method

TIP120

TIP120

TO-220 3L (Single Gauge)

Bulk

TIP120TU

TIP120

TO-220 3L (Single Gauge)

Rail

TIP121

TIP121

TO-220 3L (Single Gauge)

Bulk

TIP121TU

TIP121

TO-220 3L (Single Gauge)

Rail

TIP122

TIP122

TO-220 3L (Single Gauge)

Bulk

TIP122TU

TIP122

TO-220 3L (Single Gauge)

Rail

Symbol

Parameter

Value

Unit

 V

CBO

 Collector-Base Voltage

TIP120

60

V

TIP121

80

TIP122

100

 V

CEO

 Collector-Emitter Voltage

TIP120

60

V

TIP121

80

TIP122

100

 V

EBO

 Emitter-Base Voltage

5

V

 I

C

 Collector Current (DC)

5

A

 I

CP

 Collector Current (Pulse)

8

A

 I

B

 Base Current (DC)

120

mA

 T

J

 Junction Temperature

150

°C

 T

STG

 Storage Temperature Range

-65 to 150

°C

1.Base    2.Collector    3.Emitter

1

TO-220

Equivalent Circuit

B

E

C

R1

R2

Ω

•‰…

Ω

•‰…

TIP120 / TIP121 / TIP122 — NPN Epi

taxial Darlington T

ransistor

© 2001 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP120 / TIP121 / TIP122 Rev. 1.1.0

2 

Thermal Characteristics

Values are at

 

T

C

 = 25 °C unless otherwise noted.

Electrical Characteristics 

Values are at T

C

 = 25 °C unless otherwise noted.

Note:

1. Pulse test: pw

 ≤ 300 μs, duty cycle ≤ 2%.

Symbol

Parameter

Value

Unit

P

C

 Collector Dissipation (T

A 

= 25

°C)

2

W

 Collector Dissipation (T

C 

= 25

°C)

65

Symbol

Parameter

Conditions

Min.

Max.

Unit

 V

CEO

(sus)

 Collector-Emitter Sustaining
 Voltage

TIP120

 I

C 

= 100 mA, I

B 

= 0

60

V

TIP121

80

TIP122

100

 

I

CEO

 Collector Cut-Off Current

TIP120

 V

CE 

= 30 V, I

B 

=

 

0

0.5

mA

TIP121

 V

CE 

= 40 V, I

B 

= 0

0.5

TIP122

 V

CE 

= 50 V, I

B 

= 0

0.5

 I

CBO

 Collector Cut-Off Current

TIP120

 V

CB 

= 60 V, I

E 

= 0

0.2

mA

TIP121

 V

CB 

= 80 V, I

E 

= 0

0.2

TIP122

 V

CB 

= 100 V, I

E 

= 0

0.2

 

I

EBO

 Emitter Cut-Off Current

 V

EB 

= 5 V, I

C 

= 0

2

mA

 

h

FE

 DC Current Gain

(1)

 V

CE 

= 3 V, I

C 

= 0.5 A

1000

 V

CE 

= 3 V, I

C 

= 3 A

1000

 V

CE

(sat)

 Collector-Emitter Saturation Voltage

(1)

 I

C 

= 3 A, I

B 

= 12 mA

2.0

V

 I

C 

= 5 A, I

B 

= 20 mA

4.0

 V

BE

(on)

 Base-Emitter On Voltage

(1)

 V

CE 

= 3 V, I

C 

= 3 A

2.5

V

 C

ob

 Output Capacitance

 V

CB 

= 10 V, I

E 

= 0, 

 f = 0.1 MHz

200

pF

TIP120 / TIP121 / TIP122 — NPN Epi

taxial Darlington T

ransistor

© 2001 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP120 / TIP121 / TIP122 Rev. 1.1.0

3 

Typical Performance Characteristics

Figure 1. DC Current Gain

Figure 2. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

Figure 3. Output and Input Capacitance 

vs. Reverse Voltage

Figure 4. Safe Operating Area

Figure 5. Power Derating

0.1

1

10

100

1000

10000

V

CE

 = 4V

 

 

h

FE

, DC

 CURRE

NT 

G

A

IN

I

C

[A], COLLECTOR CURRENT

0.1

1

10

0.5

1.0

1.5

2.0

2.5

3.0

3.5

I

C

 = 250I

B

V

CE

(sat)

V

BE

(sat)

 

 

V

BE

(sa

t), V

CE

(sa

t)[V]

, S

A

TU

RATI

ON VOLTA

G

E

I

C

[A], COLLECTOR CURRENT

0.1

1

10

100

10

100

1000

C

ob

f=0.1MHz

V

CB

[V], COLLECTOR-BASE VOLTAGE

V

EB

[V], EMITTER-BASE VOLTAGE

C

ob

[p

F]

 C

ib

[p

F

], CAP

A

CIT

A

NC

E

C

ib

 

 

1

10

100

0.01

0.1

1

10

TIP121

TIP122

TIP120

DC

5m

s

10

0μ

s

500

μ

s

1m

s

 

 

I

C

[A

],

 COLLECT

OR CUR

RE

NT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0

25

50

75

100

125

150

175

0

10

20

30

40

50

60

70

80

 

 

P

C

[W

],

 POWE

R DI

SSI

PA

TION

T

C

[

o

C], CASE TEMPERATURE

TIP120 / TIP121 / TIP122 — NPN Epi

taxial Darlington T

ransistor

© 2001 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP120 / TIP121 / TIP122 Rev. 1.1.0

4 

Physical Dimensions

 

Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

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