TIP125 / TIP126 / TIP127 — PNP 

Epit

axia

l Darlington T

ransistor

© 2001 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP125 / TIP126 / TIP127 Rev. 1.1.0

1 

November 2014

TIP125 / TIP126 / TIP127
PNP Epitaxial Darlington Transistor

Features

• Medium Power Linear Switching Applications
• Complementary to TIP120 / TIP121 / TIP122

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The 
absolute maximum ratings are stress ratings only. Values are at T

C

 = 25 °C unless otherwise noted.

Part Number

Top Mark

Package

Packing Method

TIP125

TIP125

TO-220 3L (Single Gauge)

Bulk

TIP125TU

TIP125

TO-220 3L (Single Gauge)

Rail

TIP126

TIP126

TO-220 3L (Single Gauge)

Bulk

TIP126TU

TIP126

TO-220 3L (Single Gauge)

Rail

TIP127

TIP127

TO-220 3L (Single Gauge)

Bulk

TIP127TU

TIP127

TO-220 3L (Single Gauge)

Rail

Symbol

Parameter

Value

Unit

 V

CBO

 Collector-Base Voltage

TIP125

-60

V

TIP126

-80

TIP127

-100

 V

CEO

 Collector-Emitter Voltage

TIP125

-60

V

TIP126

-80

TIP127

-100

 V

EBO

 Emitter-Base Voltage

-5

V

 I

C

 Collector Current (DC)

-5

A

 I

CP

 Collector Current (Pulse)

-8

A

 I

B

 Base Current (DC)

-120

mA

 T

J

 Junction Temperature

150

°C

 T

STG

 Storage Temperature Range

-65 to 150

°C

1.Base    2.Collector    3.Emitter

1

TO-220

Equivalent Circuit

B

E

C

R1

R2

Ω

•‰…

Ω

•‰…

TIP125 / TIP126 / TIP127 — PNP 

Epit

axia

l Darlington T

ransistor

© 2001 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP125 / TIP126 / TIP127 Rev. 1.1.0

2 

Thermal Characteristics

Values are at

 

T

C

 = 25 °C unless otherwise noted.

Electrical Characteristics 

Values are at T

C

 = 25 °C unless otherwise noted.

Note:

1. Pulse test: pw

 ≤ 300 μs, duty cycle ≤ 2%.

Symbol

Parameter

Value

Unit

P

C

 Collector Dissipation (T

A 

= 25

°C)

2

W

 Collector Dissipation (T

C 

= 25

°C)

65

Symbol

Parameter

Conditions

Min.

Max.

Unit

 V

CEO

(sus)

 Collector-Emitter Sustaining
 Voltage

TIP125

 I

C 

= -100 mA, I

B 

= 0

-60

V

TIP126

-80

TIP127

-100

 

I

CEO

 Collector Cut-Off Current

TIP125

 V

CE 

= -30 V, I

B 

=

 

0

-2

mA

TIP126

 V

CE 

= -40 V, I

B 

= 0

-2

TIP127

 V

CE 

= -50 V, I

B 

= 0

-2

 I

CBO

 Collector Cut-Off Current

TIP125

 V

CB 

= -60 V, I

E 

= 0

-1

mA

TIP126

 V

CB 

= -80 V, I

E 

= 0

-1

TIP127

 V

CB 

= -100 V, I

E 

= 0

-1

 

I

EBO

 Emitter Cut-Off Current

 V

EB 

= -5 V, I

C 

= 0

-2

mA

 

h

FE

 DC Current Gain

(1)

 V

CE 

= -3 V, I

C 

= -0.5 A

1000

 V

CE 

= -3 V, I

C 

= -3 A

1000

 V

CE

(sat)

 Collector-Emitter Saturation Voltage

(1)

 I

C 

= -3 A, I

B 

= -12 mA

-2

V

 I

C 

= -5 A, I

B 

= -20 mA

-4

 V

BE

(on)

 Base-Emitter On Voltage

(1)

 V

CE 

= -3 V, I

C 

= -3 A

-2.5

V

 C

ob

 Output Capacitance

 V

CB 

= -10 V, I

E 

= 0, 

 f = 0.1 MHz

300

pF

TIP125 / TIP126 / TIP127 — PNP 

Epit

axia

l Darlington T

ransistor

© 2001 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP125 / TIP126 / TIP127 Rev. 1.1.0

3 

Typical Performance Characteristics

Figure 1. DC Current Gain

Figure 2. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

Figure 3. Output and Input Capacitance 

vs. Reverse Voltage

Figure 4. Safe Operating Area

Figure 5. Power Derating

-0.1

-1

-10

100

1k

10k

V

CE

 = -4V

 

 

h

FE

, DC CUR

RE

NT

 GA

IN

I

C

[A], COLLECTOR CURRENT

-0.1

-1

-10

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

I

C

 = 250I

B

V

CE

(sat)

V

BE

(sat)

 

 

V

BE

(sat), V

CE

(s

a

t)[

V],

 SA

TURA

TION 

VOL

T

AGE

I

C

[A], COLLECTOR CURRENT

-0.1

-1

-10

-100

10

100

1000

C

ob

f = 0.1MHz

V

CB

[V], COLLECTOR-BASE VOLTAGE

V

EB

[V], EMITTER-BASE VOLTAGE

C

ob

[p

F]

 C

ib

[p

F

], CAP

A

CIT

A

NC

E

C

ib

 

 

-1

-10

-100

-0.01

-0.1

-1

-10

TIP126

TIP127

TIP125

DC

5m

s

10

0μ

s

50

0μ

s

1m

s

 

 

I

C

[A

],

 CO

LL

ECT

O

R CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0

25

50

75

100

125

150

175

0

15

30

45

60

75

90

 

 

P

C

[W

],

 POW

E

R DI

SS

IPAT

IO

N

T

C

[

o

C], CASE TEMPERATURE

TIP125 / TIP126 / TIP127 — PNP 

Epit

axia

l Darlington T

ransistor

© 2001 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP125 / TIP126 / TIP127 Rev. 1.1.0

4 

Physical Dimensions

 

Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

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