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TIP34, TIP34A, TIP34B, TIP34C
PNP SILICON POWER TRANSISTORS
1
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
•—
Designed for Complementary Use with the
TIP33 Series
•—
80 W at 25 °C Case Temperature
•—
10 A Continuous Collector Current
•—
15 A Peak Collector Current
•—
Customer-Specified Selections Available
absolute maximum ratings at 25 °C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150 °C case temperature at the rate of 0.64 W/ °C.
3. Derate linearly to 150 °C free air temperature at the rate of 28 mW/ °C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω¦,
V
BE(off)
= 0, R
S
= 0.1
Ω¦, V
CC
= -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
TIP34
TIP34A
TIP34B
TIP34C
V
CBO
-80
-100
-120
-140
V
Collector-emitter voltage (I
B
= 0)
TIP34
TIP34A
TIP34B
TIP34C
V
CEO
-40
-60
-80
-100
V
Emitter-base voltage
V
EBO
-5
V
Continuous collector current
I
C
-10
A
Peak collector current (see Note 1)
I
CM
-15
A
Continuous base current
I
B
-3
A
Continuous device dissipation at (or below) 25 °C case temperature (see Note 2)
P
tot
80
W
Continuous device dissipation at (or below) 25 °C free air temperature (see Note 3)
P
tot
3.5
W
Unclamped inductive load energy (see Note 4)
½LI
C
2
62.5
mJ
Operating junction temperature range
T
j
-65 to +150
°C
Storage temperature range
T
stg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
T
L
250
°C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
TIP34, TIP34A, TIP34B, TIP34C
PNP SILICON POWER TRANSISTORS
2
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25 °C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
(see Note 5)
I
B
= 0
TIP34
TIP34A
TIP34B
TIP34C
-40
-60
-80
-100
V
I
CES
Collector-emitter
cut-off current
V
CE
= -80 V
V
CE
= -100 V
V
CE
= -120 V
V
CE
= -140 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
TIP34
TIP34A
TIP34B
TIP34C
-0.4
-0.4
-0.4
-0.4
mA
I
CEO
Collector cut-off
current
V
CE
= -30 V
V
CE
= -60 V
I
B
= 0
I
B
= 0
TIP34/34A
TIP34B/34C
-0.7
-0.7
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V
I
C
= 0
-1
mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
V
CE
= -4 V
I
C
= - 1A
I
C
= -3 A
(see Notes 5 and 6)
40
20
100
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -0.3 A
I
B
= -2.5 A
I
C
= -3 A
I
C
= -10 A
(see Notes 5 and 6)
-1
-4
V
V
BE
Base-emitter
voltage
V
CE
= -4 V
V
CE
= -4 V
I
C
= -3 A
I
C
= -10 A
(see Notes 5 and 6)
-1.6
-3
V
h
fe
Small signal forward
current transfer ratio
V
CE
= -10 V
I
C
= -0.5 A
f = 1 kHz
20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= -10 V
I
C
= -0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
ΘJC
Junction to case thermal resistance
1.56
°C/W
R
ΘJA
Junction to free air thermal resistance
35.7
°C/W
resistive-load-switching characteristics at 25 °C case temperature
PARAMETER
TEST CONDITIONS
†
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= -6 A
V
BE(off)
= 4 V
I
B(on)
= -0.6 A
R
L
= 5
Ω¦
I
B(off)
= 0.6 A
t
p
= 20 µs, dc
≤ 2%
0.4
µs
t
off
Turn-off time
0.7
µs
TIP34, TIP34A, TIP34B, TIP34C
PNP SILICON POWER TRANSISTORS
3
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0 ·01
-0 ·1
-1 ·0
-10
h
FE
-
D
C
C
u
rre
n
t
Ga
in
1
10
100
1000
TCS634AA
V
CE
= -4 V
T
C
= 25 °C
t
p
= 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
-0 ·01
-0 ·1
-1 ·0
-10
V
C
E
(sat
)
- Co
ll
e
c
to
r-Em
itte
r Sa
tu
ra
ti
o
n
Vo
lt
a
g
e
- V
-0 ·01
-0 ·1
-1 ·0
-10
TCS634AB
I
C
= -1 A
I
C
= -3 A
I
C
= -6 A
I
C
= -10 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0 ·1
-1 ·0
-10
V
BE
- Ba
s
e
-Em
itte
r Vo
lt
a
g
e
- V
-0 ·6
-0 ·8
-1 ·0
-1 ·2
-1 ·4
-1 ·6
TCS634AC
V
CE
= -4 V
T
C
= 25 °C
TIP34, TIP34A, TIP34B, TIP34C
PNP SILICON POWER TRANSISTORS
4
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
-1 ·0
-10
-100
-1000
I
C
- Co
ll
e
c
to
r Cu
rr
e
n
t - A
-0 ·01
-0 ·1
-1 ·0
-10
-100
SAS634AA
TIP34
TIP34A
TIP34B
TIP34C
t
p
= 300 µs, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - °C
0
25
50
75
100
125
150
P
to
t
-
Ma
xi
mu
m
P
o
w
e
r D
is
s
ip
at
io
n
-
W
0
20
40
60
80
100
TIS633AA
