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 Semiconductor Components Industries, LLC, 2005

December, 2005 - Rev. 6

1

Publication Order Number:

2N3055/D

2N3055(NPN), MJ2955(PNP)

Preferred Device  

Complementary Silicon

Power Transistors

Complementary silicon power transistors are designed for

general-purpose switching and amplifier applications.

Features

DC Current Gain - h

FE

 = 20 -70 @ I

C

 = 4 Adc

Collector-Emitter Saturation Voltage -

V

CE(sat)

 = 1.1 Vdc (Max) @ I

C

 = 4 Adc

Excellent Safe Operating Area

Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

V

CEO

60

Vdc

Collector-Emitter Voltage

V

CER

70

Vdc

Collector-Base Voltage

V

CB

100

Vdc

Emitter-Base Voltage

V

EB

7

Vdc

Collector Current - Continuous

I

C

15

Adc

Base Current

I

B

7

Adc

Total Power Dissipation @ T

C

 = 25

C

Derate Above 25

C

P

D

115

0.657

W

W/

C

Operating and Storage Junction
Temperature Range

T

J

, T

stg

-



65 to +200

C

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

160

0

0

25

50

75

100

125

150

175

200

Figure 1. Power  Derating

T

C

, CASE TEMPERATURE ( C)

P

D, POWER DISSIP

ATION 

(W

ATTS)

140

120

100

80

60

40

20

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 VOLTS, 115 WATTS

http://onsemi.com

Preferred devices are recommended choices for future use
and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

2N3055

TO-204AA

100 Units / Tray

MJ2955G

TO-204AA

(Pb-Free)

TO-204AA (TO-3)

CASE 1-07

STYLE 1

100 Units / Tray

2N3055G

TO-204AA

(Pb-Free)

100 Units / Tray

MJ2955

TO-204AA

100 Units / Tray

MARKING DIAGRAM

xxxx55

= Device Code

xxxx = 2N30 or MJ20

G

= Pb-Free Package

A

= Location Code

YY

= Year

WW

= Work Week

MEX

= Country of Orgin

xxxx55G

AYYWW

MEX

background image

2N3055(NPN), MJ2955(PNP)

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction-to-Case

R

q

JC

1.52

_

C/W

ELECTRICAL CHARACTERISTICS 

(T

= 25

_

C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS*

Collector-Emitter Sustaining Voltage (I

C

 = 200 mAdc, I

B

 = 0)

V

CEO(sus)

60

-

Vdc

Collector-Emitter Sustaining Voltage (I

C

 = 200 mAdc, R

BE

 = 100 

W

)

V

CER(sus)

70

-

Vdc

Collector Cutoff Current (V

CE

 = 30 Vdc, I

B

 = 0)

I

CEO

-

0.7

mAdc

Collector Cutoff Current

(V

CE

 = 100 Vdc, V

BE(off)

 = 1.5 Vdc)

(V

CE

 = 100 Vdc, V

BE(off)

 = 1.5 Vdc, T

C

 = 150

C)

I

CEX

-
-

1.0
5.0

mAdc

Emitter Cutoff Current (V

BE

 = 7.0 Vdc, I

C

 = 0)

I

EBO

-

5.0

mAdc

ON CHARACTERISTICS

DC Current Gain

(I

C

 = 4.0 Adc, V

CE

 = 4.0 Vdc)

(I

C

 = 10 Adc, V

CE

 = 4.0 Vdc)

h

FE

20

5.0

70

-

-

Collector-Emitter Saturation Voltage

(I

C

 = 4.0 Adc, I

B

 = 400 mAdc)

(I

C

 = 10 Adc, I

B

 = 3.3 Adc)

V

CE(sat)

-

1.1
3.0

Vdc

Base-Emitter On Voltage (I

C

 = 4.0 Adc, V

CE

 = 4.0 Vdc)

V

BE(on)

-

1.5

Vdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(V

CE

 = 40 Vdc, t = 1.0 s, Nonrepetitive)

I

s/b

2.87

-

Adc

DYNAMIC CHARACTERISTICS

Current Gain - Bandwidth Product (I

C

 = 0.5 Adc, V

CE

 = 10 Vdc, f = 1.0 MHz)

f

T

2.5

-

MHz

*Small-Signal Current Gain (I

C

 = 1.0 Adc, V

CE

 = 4.0 Vdc, f = 1.0 kHz)

h

fe

15

120

-

*Small-Signal Current Gain Cutoff Frequency (V

CE

 = 4.0 Vdc, I

C

 = 1.0 Adc, f = 1.0 kHz)

f

hfe

10

-

kHz

*Indicates Within JEDEC Registration. (2N3055)
1. Pulse Test: Pulse Width 

v

 300 

m

s, Duty Cycle 

v

 2.0%.

20

6

Figure 2. Active Region Safe Operating Area

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

6
4

2

1

0.6
0.4

0.2

10

20

40

60

I C

, COLLECT

OR 

CURRENT

 (AMP)

dc

500 ms

1 ms

250 ms

50 ms

BONDING WIRE LIMIT
THERMALLY LIMITED @ T

C

 = 25 C (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I

C

 - V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

is based on T

C

 = 25

C; T

J(pk)

 is

variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated

background image

2N3055(NPN), MJ2955(PNP)

http://onsemi.com

3

V CE

, COLLECT

OR-EMITTER 

VOL

TAGE 

(VOL

TS)

V CE

, COLLECT

OR-EMITTER 

VOL

TAGE 

(VOL

TS)

500

0.1

Figure 3. DC Current Gain, 2N3055 (NPN)

I

C

, COLLECTOR CURRENT (AMP)

5.0

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0

10

100

50

30
20

200

70

h FE

, DC CURRENT

 GAIN

T

J

 = 150 C

25 C

-55  C

V

CE

 = 4.0 V

200

0.1

I

C

, COLLECTOR CURRENT (AMP)

10

0.2

0.3

0.5 0.7 1.0

2.0 3.0

5.0

10

70

30

20

100

50

h FE

, DC CURRENT

 GAIN

T

J

 = 150 C

25 C

-55  C

V

CE

 = 4.0 V

7.0

10

300

7.0

7.0

Figure 4. DC Current Gain, MJ2955 (PNP)

2.0

5.0

I

B

, BASE CURRENT (mA)

0

10

20

50

100

200

500

1000 2000

5000

1.6

1.2

0.8

0.4

I

C

 = 1.0 A

T

J

 = 25 C

4.0 A

8.0 A

2.0

I

B

, BASE CURRENT (mA)

0

1.6

1.2

0.8

0.4

1.4

0.1

I

C

, COLLECTOR CURRENT (AMPERES)

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0

10

1.0

0.6

0.4

0.2

0

T

J

 = 25 C

V

BE(sat)

 @ I

C

/I

B

 = 10

V

CE(sat)

 @ I

C

/I

B

 = 10

V,

 VOL

TAGE 

(VOL

TS)

Figure 5. Collector Saturation Region,

2N3055 (NPN)

1.2

0.8

7.0

V

BE

 @ V

CE

 = 4.0 V

2.0

0.1

I

C

, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

1.2

0.4

0

T

J

 = 25 C

V

BE(sat)

 @ I

C

/I

B

 = 10

V

CE(sat)

 @ I

C

/I

B

 = 10

V,

 VOL

TAGE 

(VOL

TS)

1.6

0.8

V

BE

 @ V

CE

 = 4.0 V

5.0

10

20

50

100

200

500

1000 2000

5000

I

C

 = 1.0 A

T

J

 = 25 C

4.0 A

8.0 A

Figure 6. Collector Saturation Region,

MJ2955 (PNP)

Figure 7. On Voltages, 2N3055 (NPN)

Figure 8. On Voltages, MJ2955 (PNP)

background image

2N3055(NPN), MJ2955(PNP)

http://onsemi.com

4

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

A

1.550 REF

39.37 REF

B

---

1.050

---

26.67

C

0.250

0.335

6.35

8.51

D

0.038

0.043

0.97

1.09

E

0.055

0.070

1.40

1.77

G

0.430 BSC

10.92 BSC

H

0.215 BSC

5.46 BSC

K

0.440

0.480

11.18

12.19

L

0.665 BSC

16.89 BSC

N

---

0.830

---

21.08

Q

0.151

0.165

3.84

4.19

U

1.187 BSC

30.15 BSC

V

0.131

0.188

3.33

4.77

A

N

E

C

K

-T-

SEATING

PLANE

2 PL

D

M

Q

M

0.13 (0.005)

Y

M

T

M

Y

M

0.13 (0.005)

T

-Q-

-Y-

2

1

U

L

G

B

V

H

TO-204 (TO-3)

CASE 1-07

ISSUE Z

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

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to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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operating parameters, including Typicals must be validated for each customer application by customers technical experts.  SCILLC does not convey any license under its patent rights
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2N3055/D

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