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  Semiconductor Components Industries, LLC, 2011

September, 2011 - Rev. 10

1

Publication Order Number:

2N5060/D

2N5060 Series

Sensitive Gate
Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Annular PNPN devices designed for high volume consumer

applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.

Features

Sensitive Gate Trigger Current - 200 

mA Maximum

Low Reverse and Forward Blocking Current - 50 

mA Maximum,

T

C

 = 110

C

Low Holding Current - 5 mA Maximum

Passivated Surface for Reliability and Uniformity

These are Pb-Free Devices

MAXIMUM RATINGS 

(T

J

 = 25 C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off-State Vo

(T

J

 = *40 to 110 C, Sine Wave,

50 to 60 Hz, R

GK

 = 1 kW)

2N5060

2N5061

2N5062

2N5064

V

DRM,

V

RRM

30

60

100

200

V

On-State Current RMS (180  Conduction

Angles; T

C

 = 80 C)

I

T(RMS)

0.8

A

*Average On-State Current

(180  Conduction Angles)

(T

C

 = 67 C)

(T

C

 = 102 C)

I

T(AV)

0.51

0.255

A

*Peak Non-repetitive Surge Current, 

T

A

 = 25 C (1/2 cycle, Sine Wave, 60 Hz)

I

TSM

10

A

Circuit Fusing Considerations (t = 8.3 ms)

I

2

t

0.4

A

2

s

*Average On-State Current

(180  Conduction Angles)

(T

C

 = 67 C)

(T

C

 = 102 C)

I

T(AV)

0.51

0.255

A

*Forward Peak Gate Power (Pulse Width v

1.0 msec; T

A

 = 25 C)

P

GM

0.1

W

*Forward Average Gate Power 

(T

A

 = 25 C, t = 8.3 ms)

P

G(AV)

0.01

W

*Forward Peak Gate Current (Pulse Width

v 1.0 msec; T

A

 = 25 C)

I

GM

1.0

A

*Reverse Peak Gate Voltage (Pulse Width

v 1.0 msec; T

A

 = 25 C)

V

RGM

5.0

V

*Operating Junction Temperature Range

T

J

-40 to

+110

C

*Storage Temperature Range

T

stg

-40 to

+150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

DRM

 and V

RRM

 for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*Indicates JEDEC Registered Data.

SILICON CONTROLLED 

RECTIFIERS

0.8 A RMS, 30 - 200 V

K

G

A

See detailed ordering and shipping information in the package
dimensions section 

ORDERING INFORMATION

TO-92

CASE 29

STYLE 10

50xx

Specific Device Code

Y

= Year

WW

= Work Week

MARKING 

DIAGRAM

2N

50xx

YWW

PIN ASSIGNMENT

1
2
3

Gate

Anode

Cathode

http://onsemi.com

1 2

3

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2N5060 Series

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

*Thermal Resistance, Junction-to-

R

qJC

75

C/W

Thermal Resistance, Junction-to-Ambient

R

qJA

200

C/W

2. This measurement is made with the case mounted flat side down on a heatsink and held in position by means of a metal clamp over the

curved surface.

*Indicates JEDEC Registered Data.

ELECTRICAL CHARACTERISTICS 

(T

C

 = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

*Peak Repetitive Forward or Reverse Blocking Current

(V

AK

 = Rated V

DRM

 or V

RRM

)

T

= 25 C

T

= 110 C

I

DRM

, I

RRM

-
-

-
-

10
50

mA

mA

ON CHARACTERISTICS

*Peak Forward On-State V

(I

TM

 = 1.2 A peak @ T

A

 = 25 C)

V

TM

-

-

1.7

V

Gate Trigger Current 

*(V

AK

 = 7.0 Vdc, R

L

 = 100 W)

T

= 25 C

T

= -40 C

I

GT

-
-

-
-

200
350

mA

Gate Trigger V

T

= 25 C

*(V

AK

 = 7.0 Vdc, R

L

 = 100 W)

T

= -40 C

V

GT

-
-

-
-

0.8
1.2

V

*Gate Non-Trigger Voltage

(V

AK

 = Rated V

DRM

, R

L

 = 100 W) T

= 110 C

V

GD

0.1

-

-

V

Holding Current

T

= 25 C

*(V

AK

 = 7.0 Vdc, initiating current = 20 mA)

T

= -40 C

I

H

-
-

-
-

5.0

10

mA

Turn-On Time

Delay Time
Rise Time
(I

GT

 = 1.0 mA, V

D

 = Rated V

DRM

,

Forward Current = 1.0 A, di/dt = 6.0 A/ms

t

d

t

r

-
-

3.0
0.2

-
-

ms

Turn-Off Time

(Forward Current = 1.0 A pulse,
Pulse Width = 50 ms,

0.1% Duty Cycle, di/dt = 6.0 A/ms,

dv/dt = 20 V/ms, I

GT

 = 1 mA)

2N5060, 2N5061
2N5062, 2N5064

t

q

-
-

10
30

-
-

ms

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off-State Voltage

(Rated V

DRM

, Exponential, R

GK

 = 1 kW)

dv/dt

-

30

-

V/ms

*Indicates JEDEC Registered Data.

3. R

GK

 = 1000 W is included in measurement.

4. Forward current applied for 1 ms maximum duration, duty cycle p 1%.

5. R

GK

 current is not included in measurement.

background image

2N5060 Series

http://onsemi.com

3

+ Current

+ Voltage

V

TM

I

DRM 

at V

DRM

I

H

Symbol

Parameter

V

DRM

Peak Repetitive Off State Forward Voltage

I

DRM

Peak Forward Blocking Current

V

RRM

Peak Repetitive Off State Reverse Voltage

I

RRM

Peak Reverse Blocking Current

V

TM

Peak on State Voltage

I

H

Holding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode -

Forward Blocking Region

I

RRM 

at V

RRM

(off state)

120

50

60

70

80

90

100

110

0

0.1

0.2

0.3

0.4

130

0.5

I

T(AV)

, AVERAGE ONSTATE CURRENT (AMP)

a

dc

110

30

50

70

90

130

dc

a

0

0.1

0.2

0.3

0.4

I

T(AV)

, AVERAGE ONSTATE CURRENT (AMP)

T C

, MAXIMUM 

ALLOW

ABLE CASE 

TEMPERA

TURE ( C)

T A

, MAXIMUM ALLOW

ABLE AMBIENT

TEMPERA

TURE (  C)

a = 30

a = 30

60

 90

90

120

120

180

CASE MEASUREMENT
POINT - CENTER OF
FLAT PORTION

60

180

TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING

a = CONDUCTION ANGLE

a = CONDUCTION ANGLE

Figure 1. Maximum Case Temperature

Figure 2. Maximum Ambient Temperature

CURRENT DERATING

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2N5060 Series

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4

P

(A

V)

, MAXIMUM 

A

VERAGE POWER

DISSIP

A

TION (W

A

TTS)

5.0

0.05

0.01

0.02

0

0.5

1.0

1.5

2.0

3.0

2.5

v

T

, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)

0.07

0.03

0.1

0.2

0.3

0.5

0.7

1.0

2.0

5.0

25

C

T

J

 = 110

C

30

7.0

1.0

3.0

2.0

10

1.0

2.0

3.0

5.0 7.0

10

20

50 70

100

0

0.2

0.4

0.6

a

0.1

0.4

dc

0.8

0

0.2

0.5

a = CONDUCTION ANGLE

0.3

NUMBER OF CYCLES

I

T(AV)

, AVERAGE ONSTATE CURRENT (AMP)

i T

, INST

ANT

ANEOUS ONST

A

TE CURRENT

 (AMP)

I TSM

, PEAK SURGE CURRENT

 (AMP)

a = 30

60

90

120

180

Figure 3. Typical Forward Voltage

Figure 4. Maximum Non-Repetitive Surge Current

Figure 5. Power Dissipation

CURRENT DERATING

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2N5060 Series

http://onsemi.com

5

0.7

0.3

0.4

0.5

0.6

0.8

V

AK

 = 7.0 V

R

L

 = 100

R

GK

 =  1.0 k

3.0

0.8

0.4

0.6

1.0

2.0

50

0

-75

-50

-25

4.0

25

100

75

110

T

J

, JUNCTION TEMPERATURE (

C)

2N5060,61

100

V

AK

 = 7.0 V

R

L

 = 100

R

GK

 =  1.0 k

0.2

0.5

1.0

2.0

5.0

10

20

50

200

V

AK

 = 7.0 V

R

L

 = 100

2N506264

2N506061

TYPICAL CHARACTERISTICS

50

0

-75

-50

-25

25

100

75

110

T

J

, JUNCTION TEMPERATURE (

C)

50

0

-75

-50

-25

25

100

75

T

J

, JUNCTION TEMPERATURE (

C)

V

G

, GA

TE 

TRIGGER VOL

TAGE (VOL

TS)

I GT

, GA

TE 

TRIGGER CURRENT

 (NORMALIZED)

I H

, HOLDING CURRENT

 (NORMALIZED)

2N506264

0.02

0.2

20

10

5.0

2.0

1.0

0.05

0.01

0.002

0.005

0.5

0.02

0.01

0.5

0.1

0.05

0.1

0.2

t, TIME (SECONDS)

1.0

r(t), TRANSIENT

 THERMAL

 RESIST

ANCE 

NORMALIZED

110

Figure 6. Thermal Response

Figure 7. Typical Gate Trigger Voltage

Figure 8. Typical Gate Trigger Current

Figure 9. Typical Holding Current

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2N5060 Series

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6

ORDERING INFORMATION

Device

Package

Shipping

2N5060G

TO-92

(Pb-Free)

5000 Units / Box

2N5060RLRA

TO-92

2000 / Tape & Reel

2N5060RLRAG

TO-92

(Pb-Free)

2000 / Tape & Reel

2N5060RLRMG

TO-92

(Pb-Free)

2000 / Ammo Pack

2N5061G

TO-92

(Pb-Free)

5000 Units / Box

2N5061RLRAG

TO-92

(Pb-Free)

2000 / Tape & Reel

2N5062G

TO-92

(Pb-Free)

5000 Units / Box

2N5062RLRAG

TO-92

(Pb-Free)

2000 / Tape & Reel

2N5064RLRMG

TO-92

(Pb-Free)

2000 / Ammo Pack

2N5064RLRAG

TO-92

(Pb-Free)

2000 / Tape & Reel

2N5064G

TO-92

(Pb-Free)

5000 Units / Box

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

background image

2N5060 Series

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7

PACKAGE DIMENSIONS

TO-92 (TO-226)

CASE 29-11

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

R

A

P

J

L

B

K

G

H

SECTION X-X

C

V

D

N

N

X X

SEATING
PLANE

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

A

0.175

0.205

4.45

5.20

B

0.170

0.210

4.32

5.33

C

0.125

0.165

3.18

4.19

D

0.016

0.021

0.407

0.533

G

0.045

0.055

1.15

1.39

H

0.095

0.105

2.42

2.66

J

0.015

0.020

0.39

0.50

K

0.500

---

12.70

---

L

0.250

---

6.35

---

N

0.080

0.105

2.04

2.66

P

---

0.100

---

2.54

R

0.115

---

2.93

---

V

0.135

---

3.43

---

1

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P

AND BEYOND DIMENSION K MINIMUM.

R

A

P

J

B

K

G

SECTION X-X

C

V

D

N

X X

SEATING
PLANE

DIM

MIN

MAX

MILLIMETERS

A

4.45

5.20

B

4.32

5.33

C

3.18

4.19

D

0.40

0.54

G

2.40

2.80

J

0.39

0.50

K

12.70

---

N

2.04

2.66

P

1.50

4.00

R

2.93

---

V

3.43

---

1

T

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

STYLE 10:

PIN 1. CATHODE

2. GATE
3. ANODE

ON Semiconductor and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice

to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All

operating parameters, including Typicals must be validated for each customer application by customers technical experts.  SCILLC does not convey any license under its patent rights

nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal

Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800-282-9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81-3-5773-3850

2N5060/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Websitewww.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative


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