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background image

BC556 / BC557 / BC558 / BC559 / BC560 — 

PN

P Epit

axial Silicon 

T

ra

n

sis
tor

© 2002 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

January 2016

BC556 / BC557 / BC558 / BC559 / BC560
PNP Epitaxial Silicon Transistor

Features

• Switching and Amplifier

• High-Voltage: BC556, V

CEO 

= -65 V

• Low-Noise: BC559, BC560

• Complement to BC546, BC547, BC548, BC549, and BC550

Ordering Information

Part Number

Marking

Package

Packing Method

BC556ABU

BC556A

TO-92 3L

Bulk

BC556ATA

BC556A

TO-92 3L

Ammo

BC556BTA

BC556B

TO-92 3L

Ammo

BC556BTF

BC556B

TO-92 3L

Tape and Reel

BC556BTFR

BC556B

TO-92 3L

Tape and Reel

BC557ATA

BC557A

TO-92 3L

Ammo

BC557BTA

BC557B

TO-92 3L

Ammo

BC557BTF

BC557B

TO-92 3L

Tape and Reel

BC558BTA

BC558B

TO-92 3L

Ammo

BC559BTA

BC559B

TO-92 3L

Ammo

BC559CTA

BC559C

TO-92 3L

Ammo

BC560CTA

BC560C

TO-92 3L

Ammo

1. Collector 

1 2

3

1

2

3

Straight Lead        Bent Lead

TO-92

Bulk Packing       Tape & Reel
                           Ammo Packing

2. Base 
3. Emitter

 

background image

BC556 / BC557 / BC558 / BC559 / BC560 — 

PN

P Epit

axial Silicon 

T

ra

n

sis
tor

© 2002 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

A

 = 25 °C unless otherwise noted.

Thermal Characteristics

(1)

Values are at T

A

 = 25 °C unless otherwise noted.

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Symbol

Parameter

Value

Unit

V

CBO

Collector-Base Voltage

BC556

-80

V

BC557 / BC560

-50

BC558 / BC559

-30

V

CEO

Collector-Emitter Voltage

BC556

-65

V

BC557 / BC560

-45

BC558 / BC559

-30

V

EBO

Emitter-Base Voltage

-5

V

I

C

Collector Current (DC)

-100

mA

I

CP

Peak Collector Current (Pulse)

-200

mA

I

BP

Peak Base Current (Pulse)

-200

mA

T

J

Junction Temperature

150

°C

T

STG

Storage Temperature Range

-65 to +150

°C

Symbol

Parameter

Max.

Unit

P

D

Total Power Dissipation

500

mW

Derate Above 25

°C

4.0

mW/

°C

R

ΘJA

Thermal Resistance, Junction-to-Ambient

250

°C/W

background image

BC556 / BC557 / BC558 / BC559 / BC560 — 

PN

P Epit

axial Silicon 

T

ra

n

sis
tor

© 2002 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Electrical Characteristics

Values are at T

A

 = 25 °C unless otherwise noted.

h

FE 

Classification

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

I

CBO

Collector Cut-Off Current

V

CB 

= -30 V, I

= 0

-15

nA

h

FE

DC Current Gain

V

CE 

= -5 V, I

= -2 mA

110

800

V

CE

(sat)

Collector-Emitter Saturation 
Voltage

I

= -10 mA, I

= -0.5 mA

-90

-300

mV

I

= -100 mA, I

= -5 mA

-250

-650

V

BE

(sat)

Collector-Base Saturation Voltage

I

= -10 mA, I

= -0.5 mA

-700

mV

I

= -100 mA, I

= -5 mA

-900

V

BE

(on)

Base-Emitter On Voltage             

V

CE 

= -5 V, I

= -2 mA

-600

-660

-750

mV

V

CE 

= -5 V, I

= -10 mA

-800

f

T

Current Gain Bandwidth Product

V

CE 

= -5 V, I

= -10 mA, 

f = 10 MHz

150

MHz

C

ob

Output Capacitance

V

CB 

= -10 V, I

= 0, f = 1 MHz

6

pF

NF

Noise 
Figure

BC556 / BC557 / BC558 V

CE 

= -5 V, I

= -200 

μA,

f = 1 kHz, R

= 2 k

2

10

dB

BC559 / BC560

1

4

BC559

V

CE 

= -5 V, I

= -200 

μA,

R

= 2 k

Ω, f = 30 to 15000 MHz

1.2

4.0

BC560

1.2

2.0

Classification

A

B

C

h

FE

110 ~ 220

200 ~ 450

420 ~ 800

background image

BC556 / BC557 / BC558 / BC559 / BC560 — 

PN

P Epit

axial Silicon 

T

ra

n

sis
tor

© 2002 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Typical Performance Characteristics

Figure 1. Static Characteristic

Figure 2. DC Current Gain

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage

Figure 6. Collector Output Capacitance

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

-0

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

I

B

 = -50

μ

A

I

B

 = -100

μ

A

I

B

 = -150

μ

A

I

B

 = -200

μ

A

I

B

 = -250

μ

A

I

B

 = -300

μ

A

I

B

 = -350

μ

A

I

B

 = -400

μ

A

 

 

I

C

[m

A

],

 CO

LL

ECT

O

R CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-1

-10

-100

-1000

10

100

1000

T

A

 = -55

o

C

T

A

 = 25

o

C

V

CE

 = -5V

 

 

h

FE

, DC CURR

E

N

GA

IN

I

C

 [mA], COLLECTOR CURRENT

T

A

 = 150

o

C

-1

-10

-100

-1000

-0.01

-0.1

-1

-10

T

A

 = -55

o

C

T

A

 = 25

o

C

I

C

 = 20 I

B

 

 

V

CE

(s

at)

 [V

], CO

L

L

E

C

T

O

R

-E

M

IT

T

E

SA

T

U

R

A

TI

O

N

 VO

L

T

AG

E

I

C

 [mA], COLLECTOR CURRENT

T

A

 = 150

o

C

-1

-10

-100

-1000

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

T

A

 = -55

o

C

T

A

 = 25

o

C

I

C

 = 20 I

B

 

 

V

BE

(sat) [V], BASE-EMITTER SATURATION VOLTAGE

I

C

 [

m

A

], COLLECTOR CUR

RE

N

T

T

A

 = 150

o

C

-10

-100

-1000

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

T

A

 = -55

o

C

T

A

 = 25

o

C

V

CE

 = -5V

 

 

V

BE

(on) [V], BASE-EMITTER ON VOLTAGE

I

[m

A

], CO

LL

E

C

T

O

R

 CU

RR

E

N

T

T

A

 = 150

o

C

-1

-10

-100

1

10

f=1MHz

I

E

 = 0

 

 

C

ob

(pF

), CA

PACI

T

AN

CE

V

CB

[V], COLLECTOR-BASE VOLTAGE

background image

BC556 / BC557 / BC558 / BC559 / BC560 — 

PN

P Epit

axial Silicon 

T

ra

n

sis
tor

© 2002 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Typical Performance Characteristics 

(Continued)

Figure 7. Current Gain Bandwidth Product

Figure 8. Power Deration

Figure 9. Normalized Transient Thermal Resistance

-1

-10

10

100

1000

V

CE

 = -5V

 

 

f

T

[MHz], 

CURRE

NT GAI

N

-BA

NDWID

TH P

R

ODUCT

I

C

[mA], COLLECTOR CURRENT

0

50

100

150

1

10

100

1000

 

POWER

 D

ISSIPATIO

N, P

D

 [m

W]

AMBIENT TEMPERATURE, [

o

C]

1E-5

1E-4

1E-3

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100

1000

50%

r(t

),

 Normalized

 T

ransient

 T

hermal Resist

ance

t1, time(sec)

Single Pulse

30%

10%

5%

2%

D=1%

Rthja(t)=r(t)*Rthja

Rthja=250

o

C/W

background image

BC556 / BC557 / BC558 / BC559 / BC560 — 

PN

P Epit

axial Silicon 

T

ra

n

sis
tor

© 2002 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Physical Dimensions

Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION, BULK

background image

BC556 / BC557 / BC558 / BC559 / BC560 — 

PN

P Epit

axial Silicon 

T

ra

n

sis
tor

© 2002 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

Physical Dimensions 

(Continued)

Figure 11. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM, AMMO, TAPE AND REEL

background image

© Fairchild Semiconductor Corporation 

 

www.fairchildsemi.com 

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intended to be an exhaustive list of all such trademarks. 

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*

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¥

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®

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¥-3 

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®*

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®

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௝•º

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Definition of Terms 

Datasheet Identification 

Product Status 

Definition 

Advance Information 

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Datasheet contains the design specifications for product development. Specifications may change 
in any manner without notice. 

Preliminary First 

Production 

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild 
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make 
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Rev. I77 

 

®


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