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TIP31A / TIP31C 

NPN Epit

axial 

Silicon 

T

ransistor

 2000 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP31A / TIP31C Rev. 1.1.0

 

November 2014

TIP31A / TIP31C
NPN Epitaxial Silicon Transistor

Features

 Medium Power Linear Switching Applications

 Complementary to TIP32 Series

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

C

 = 25 C unless otherwise noted.

Part Number

Top Mark

Package

Packing Method

TIP31A

TIP31A

TO-220 3L (Single Gauge)

Bulk

TIP31C

TIP31C

TO-220 3L (Single Gauge)

Bulk

TIP31CTU

TIP31C

TO-220 3L (Single Gauge)

Rail

Symbol

Parameter

Value

Unit

V

CBO

Collector-Base Voltage

TIP31A

60

V

TIP31C

100

V

CEO

Collector-Emitter Voltage

TIP31A

60

V

TIP31C

100

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current (DC)

3

A

I

CP

Collector Current (Pulse)

5

A

I

B

Base Current

1

A

T

J

Junction Temperature

150

C

T

STG

Storage Temperature Range

-65 to 150

C

1.Base    2.Collector    3.Emitter

1

TO-220

background image

TIP31A / TIP31C 

NPN Epit

axial 

Silicon 

T

ransistor

 2000 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP31A / TIP31C Rev. 1.1.0

Thermal Characteristics

Values are at

 

T

C

 = 25 C unless otherwise noted.

Electrical Characteristics

Values are at T

C

 = 25 C unless otherwise noted.

Note:

1. Pulse test: pw

 ≤ 300 μs, duty cycle ≤ 2%.

Symbol

Parameter

Value

Unit

P

C

 Collector Dissipation (T

= 25

C)

2

W

 Collector Dissipation (T

= 25

C)

40

Symbol

Parameter

Conditions

Min.

Max.

Unit

 V

CEO

(sus)

 Collector-Emitter Sustaining
 Voltage

(1)

 TIP31A

 I

= 30 mA, I

= 0

60

V

 TIP31C

100

 

I

CEO

 Collector Cut-Off Current

 TIP31A

 V

CE 

= 30 V, I

=

 

0

0.3

mA

 TIP31C

 V

CE 

= 60 V, I

=

 

0

0.3

 I

CES

 Collector Cut-Off Current

 TIP31A

 V

CE 

= 60 V, V

EB 

= 0

200

μA

 TIP31C

 V

CE 

= 100 V, V

EB 

= 0

200

 

I

EBO

 Emitter Cut-Off Current

 V

EB 

= 5 V, I

= 0

1

mA

 

h

FE

 DC Current Gain

(1)

 V

CE 

= 4 V, I

= 1 A

25

 V

CE 

= 4 V, I

= 3 A

10

50

 V

CE

(sat)

 Collector-Emitter Saturation Voltage

(1)

 I

= 3 A, I

= 375 mA

1.2

V

 V

BE

(on)

 Base-Emitter On Voltage

(1)

 V

CE 

= 4 V, I

= 3 A

1.8

V

 f

T

 Current Gain Bandwidth Product

 V

CE 

= 10 V, I

= 500 mA,

 f = 1 MHz

3.0

MHz

background image

TIP31A / TIP31C 

NPN Epit

axial 

Silicon 

T

ransistor

 2000 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP31A / TIP31C Rev. 1.1.0

Typical Performance Characteristics

Figure 1. DC Current Gain

Figure 2. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

Figure 3. Safe Operating Area

Figure 4. Power Derating

1

10

100

1000

10000

1

10

100

1000

V

CE

 = 4V

 

 

h

FE

, DC

 CURRE

NT 

G

A

IN

I

C

[mA], COLLECTOR CURRENT

1

10

100

1000

10000

10

100

1000

10000

I

C

/I

B

 = 10

V

CE

(sat)

V

BE

(sat)

 

 

V

BE

(sat), V

CE

(s

a

t)[mV

], SAT

URAT

ION 

V

O

L

T

A

G

E

I

C

[mA], COLLECTOR CURRENT

10

100

0.1

1

10

100

μs

TIP31C V

CEO

 MAX.

TIP31B V

CEO

 MAX.

TIP31A V

CEO

 MAX.

TIP31 V

CEO

 MAX.

I

C

(MAX) (DC)

I

C

(MAX) (PULSE)

5

m

s

1

m

s

 

 

I

C

[A

], COLLECT

O

R CURRE

NT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0

25

50

75

100

125

150

175

200

0

5

10

15

20

25

30

35

40

45

50

 

 

P

C

[W

], P

O

WER 

DISS

IP

ATI

O

N

T

C

[

o

C], CASE TEMPERATURE

background image

TIP31A / TIP31C 

NPN Epit

axial 

Silicon 

T

ransistor

 2000 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

TIP31A / TIP31C Rev. 1.1.0

Physical Dimensions

 

Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

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Rev. I72 


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