Freescale Semiconductor today introduced LDMOS driver amplifier RFICs designed to set new standards for video bandwidth, gain and efficiency for broadband networks. These advanced RF devices are ideal for such wireless applications as Multi-Carrier GSM, W-CDMA and the LTE enhancement to UMTS.
Freescale’s latest RFICs, along with its high-power LDMOS RF power transistors, are designed to enable multi-carrier amplifiers in base station transceivers to process more channels than ever before. This exceptional performance is expected to reduce base station manufacturing cost and power consumption while decreasing base station annual transmitter operating cost.
The RFICs are engineered to meet growing demand for greater RF performance and lower cost, while addressing the wide channel bandwidths of broadband transmission technologies such as LTE. The bandwidth required to accommodate high data rates means that the instantaneous video bandwidth of RF power transistors and amplifiers must be as wide as possible. The greater an amplifier’s video bandwidth, the more adjacent channels it can process.
To meet this challenge, the advanced Freescale RFICs have an instantaneous bandwidth of approximately 60 MHz, which allow them to accommodate multiple channels without increasing intermodulation distortion. This is the broadest instantaneous bandwidth of any RFICs currently available for operation in this band. When combined with Freescale’s latest generation of high power LDMOS transistors, the RFICs can produce an amplifier with excellent linearity characteristics even when processing multiple carriers.
RFIC portfolio overview
The RFICs include the MW7IC2040N, MW7IC2220N and MW7IC2240N, and all are designed to cover popular bands between 1.8 and 2.2 GHz. The devices are fabricated using Freescale’s high-voltage, seventh-generation (HV7) process technology, which provides significant improvements in gain and efficiency over earlier LDMOS generations.
The devices are designed in Freescale’s cost-effective, over-molded plastic packaging and are RoHS complaint. They join the company’s growing portfolio of RFICs that cover the full range of wireless communications networks, including GSM/EDGE, Multi-Carrier GSM, W-CDMA, LTE, WiMAX, and TD-SCDMA.
Key specifications for the devices in W-CDMA operation with a 3.84 MHz channel bandwidth include:
- MW7IC2040N: At 1.9 GHz, Pout = 4 W, gain is 32 dB, PAE is 17.5%, and ACPR is -50 dBc.
- MW7IC2220N: At 2.17 GHz, Pout = 2 W, gain is 31 dB, PAE is 13%, and ACPR is -50 dBc.
- MW7IC2240N: At 2.17 GHz, Pout = 4 W, gain is 30 dB, PAE is 14%, and ACPR is -50 dBc.
Exceptional ruggedness, advanced features
All three devices feature electrostatic discharge (ESD) protection designed to decrease susceptibility to damage on assembly lines. The devices feature on-chip matching to simplify circuit design, are extremely rugged, conservatively rated and are designed withstand a VSWR of 5:1.